GI405

Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : GI405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 32m -18A Description The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings -30 ±20 -18 -14 -40 60 0.4 61 -35 -55 ~ +175 Unit V V A A A W W/ : mJ A : Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit : /W : /W GI405 Page: 1/4 ISSUED DATE :2006/12/06 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. -30 -1.2 - Typ. 17 18.7 2.54 5.4 9 25 20 12 920 190 122 Max. -2.4 ±100 -1 -5 32 60 23 13 1100 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-18A VGS= ±20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A ID=-18A VDS=-15V VGS=-10V VDS=-15V VGS=-10V RG=3 RL=0.82 VGS=0V VDS=-15V f=1.0MHz Static Drain-Source On-Resistance3 Total Gate Charge3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body Diode) Symbol VSD IS Trr Qrr Min. - Typ. 21.4 13 Max. -1.0 -18 - Unit V A ns nC Test Conditions IS=-1A, VGS=0V VD= VG=0V, VS=-1.0V IS=-18A, VGS=0V dI/dt=100A/ s Reverse Recovery Time 3 Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=25V, L=0.1mH, RG=25 . 3. Pulse width 300us, duty cycle 2%. GI405 Page: 2/4 ISSUED DATE :2006/12/06 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 4. On-Resistance v.s. Junction Temperature Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GI405 Page: 3/4 ISSUED DATE :2006/12/06 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1 000 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI405 Page: 4/4