Pb Free Plating Product
ISSUED DATE :2006/04/28 REVISED DATE :
GSS6900S
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *DC-DC Converter Suitable *Fast Switching Performance
Description
CH1 BVDSS 30V N-CH RDS(ON) 30m N-CH ID 5.7A CH2 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 9.8A
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg
Ratings
CH-1 CH-2
Unit V V A A A W W/ : :
30 ±20 5.7 4.6 20 1.4 0.01
30 ±20 9.8 7.8 30 3.1 0.02
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
-55 ~ +150
Thermal Data
Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient
3 3 3
Symbol Rthj-a(CH-1) Rthj-a(CH-2) Rthj-a(Schottky)
Value Typ. 70 42 52 Max. 90 40 60
Unit : /W : /W : /W
GSS4816S
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ISSUED DATE :2006/04/28 REVISED DATE :
CH-1 Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 30 1.0 -
Typ. 0.01 5.7 -
Max. 3.0 ±100 1 25 30 37 15 970 -
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=5A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=3A ID=6A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10 RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg
-
9 2 6 8 7 19 6 610 160 120 1.6
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage2 Reverse Recovery Time
2
Symbol VSD Trr Qrr
Min. -
Typ. 18 11
Max. 1.2 -
Unit V ns nC
Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V dI/dt=100A/ s
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec.
GSS4816S
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ISSUED DATE :2006/04/28 REVISED DATE :
CH-2 Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 30 1.0 -
Typ. 0.1 11 -
Max. 3.0 ±100 100 1 22 29 40 1860 -
Unit V V/ : V S nA uA mA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=9A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=9A VGS=4.5V, ID=7A ID=7A VDS=24V VGS=10V VDS=20V ID=1A VGS=10 RG=5.7 RD=20 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg
-
25 4 7 10 6 26 12 1170 205 142 1.7
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
2 2
Symbol VSD Trr Qrr
Min. -
Typ. 21 16
Max. 1.2 -
Unit V ns nC
Test Conditions IS=2.6A, VGS=0V IS=7A, VGS=0V dI/dt=100A/ s
Reverse Recovery Time
Reverse Recovery Charge
Schottky Characteristics @ Tj=25
Parameter Forward Voltage Drop Max. Reverse Leakage Current Junction Capacitance VF IRM CT
(unless otherwise specified)
Min. Typ. 0.47 0.004 0.5 66 Max. 0.5 0.2 1 Unit V mA mA pF Test Conditions IF=1A VR=30V VR=30V, Tj=100 : VR=10V
Symbol
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board, t GSS4816S
2
10sec. Page: 3/8
ISSUED DATE :2006/04/28 REVISED DATE :
Characteristics Curve CH-1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GSS4816S
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2006/04/28 REVISED DATE :
CH-1
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
GSS4816S
Fig 12. Gate Charge Waveform
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ISSUED DATE :2006/04/28 REVISED DATE :
CH-2
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GSS4816S
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2006/04/28 REVISED DATE :
CH-2
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
GSS4816S
Fig 12. Gate Charge Waveform
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ISSUED DATE :2006/04/28 REVISED DATE :
Schottky
Fig 1. Reverse Current v.s. Junction Temperature
Fig 2. Typical Forward Characteristics
Fig 3. Typical Junction Capacitance
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS4816S
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