GSS6900S

Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : GSS6900S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *DC-DC Converter Suitable *Fast Switching Performance Description CH1 BVDSS 30V N-CH RDS(ON) 30m N-CH ID 5.7A CH2 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 9.8A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings CH-1 CH-2 Unit V V A A A W W/ : : 30 ±20 5.7 4.6 20 1.4 0.01 30 ±20 9.8 7.8 30 3.1 0.02 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient 3 3 3 Symbol Rthj-a(CH-1) Rthj-a(CH-2) Rthj-a(Schottky) Value Typ. 70 42 52 Max. 90 40 60 Unit : /W : /W : /W GSS4816S Page: 1/8 ISSUED DATE :2006/04/28 REVISED DATE : CH-1 Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 30 1.0 - Typ. 0.01 5.7 - Max. 3.0 ±100 1 25 30 37 15 970 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=5A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=3A ID=6A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10 RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - 9 2 6 8 7 19 6 610 160 120 1.6 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. - Typ. 18 11 Max. 1.2 - Unit V ns nC Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V dI/dt=100A/ s Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec. GSS4816S Page: 2/8 ISSUED DATE :2006/04/28 REVISED DATE : CH-2 Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 30 1.0 - Typ. 0.1 11 - Max. 3.0 ±100 100 1 22 29 40 1860 - Unit V V/ : V S nA uA mA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=9A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=9A VGS=4.5V, ID=7A ID=7A VDS=24V VGS=10V VDS=20V ID=1A VGS=10 RG=5.7 RD=20 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - 25 4 7 10 6 26 12 1170 205 142 1.7 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 2 Symbol VSD Trr Qrr Min. - Typ. 21 16 Max. 1.2 - Unit V ns nC Test Conditions IS=2.6A, VGS=0V IS=7A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Schottky Characteristics @ Tj=25 Parameter Forward Voltage Drop Max. Reverse Leakage Current Junction Capacitance VF IRM CT (unless otherwise specified) Min. Typ. 0.47 0.004 0.5 66 Max. 0.5 0.2 1 Unit V mA mA pF Test Conditions IF=1A VR=30V VR=30V, Tj=100 : VR=10V Symbol Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board, t GSS4816S 2 10sec. Page: 3/8 ISSUED DATE :2006/04/28 REVISED DATE : Characteristics Curve CH-1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GSS4816S Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/8 ISSUED DATE :2006/04/28 REVISED DATE : CH-1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform GSS4816S Fig 12. Gate Charge Waveform Page: 5/8 ISSUED DATE :2006/04/28 REVISED DATE : CH-2 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GSS4816S Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 6/8 ISSUED DATE :2006/04/28 REVISED DATE : CH-2 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform GSS4816S Fig 12. Gate Charge Waveform Page: 7/8 ISSUED DATE :2006/04/28 REVISED DATE : Schottky Fig 1. Reverse Current v.s. Junction Temperature Fig 2. Typical Forward Characteristics Fig 3. Typical Junction Capacitance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS4816S Page: 8/8