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2N6400G

2N6400G

  • 厂商:

    HAMLIN(力特)

  • 封装:

    TO-220-3

  • 描述:

    THYRISTOR SCR 16A 50V TO-220AB

  • 数据手册
  • 价格&库存
2N6400G 数据手册
Thyristors Surface Mount – 50 - 800V > 2N6400 2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features • Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 V • These are Pb−Free devices Pin Out Functional Diagram 4 TO 220AB CASE 221A STYLE 3 1 2 2N640xG AYWW Additional Information 3 Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Thyristors Surface Mount – 50 - 800V > 2N6400 Maximum Ratings † (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) Part Number Symbol Value 2N6400 50 2N6401 100 2N6402 VDRM, 200 2N6403 VRRM 400 2N6404 600 2N6405 800 On-State RMS Current IT Unit V (RMS) 16 A (AV) 10 A ITSM 160 A I2t 145 A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 100°C) PGM 20 W Forward Average Gate Power (t = 8.3 ms, TC = 100°C) PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 100°C) IGM 2.0 A Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C (180° Conduction Angles; TC = 100°C) Average On-State RMS Current IT (180° Conduction Angles; TC = 100°C) Peak Non−Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) Circuit Fusing Considerations (t = 8.3 ms) †Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Maximum Ratings † (TJ = 25°C unless otherwise noted) Rating Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Symbol Value Unit RΘJC 1.5 °C/W TL 260 °C † Indicates JEDEC Registered Data © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Thyristors Surface Mount – 50 - 800V > 2N6400 Electrical Characteristics - OFF (TC = 25°C unless otherwise noted) Characteristic TJ = 25°C †Peak Repetitive Blocking Current (VAK = VDRM = VRRM; Gate Open) TJ = 125°C Symbol Min Typ Max Unit IDRM, - - 1.0 µA - - 2.0 mA IRRM Electrical Characteristics - ON Characteristic Symbol Min Typ Max Unit VTM − – 1.7 V − 9.0 30 − − 60 − 0.7 1.5 − − 2.5 0.2 − − − 18 40 − − 60 − 1.0 – − 15 − − 35 − †Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) TC = 25°C †Gate Trigger Voltage (Continuous DC), All Quadrants (Continuous dc) (VD = 12 Vdc, RL = 100 Ω) IGT TC= -40°C TC = 25°C †Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω) VGT TC= -40°C TC = +125°C Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ω) †Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) VGD TC = 25°C IH TC= -40°C Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) tgt TC = 25°C Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) tq TJ= +125°C mA V V mA µs µs †Indicates JEDEC Registered Data Dynamic Characteristics Characteristic Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) TJ= +125°C Symbol Min Typ Max Unit dv/dt(c) − 50 − V/µs © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Thyristors Surface Mount – 50 - 800V > 2N6400 Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH I I I Holding Current Figure 1. Current Derating Figure 2. Maximum On-State Power Dissipation ° TJ ≈ α °C ° α = CONDUCTION ANGLE ° ° α ° dc α ° ° ° ° α α = CONDUCTION ANGLE ° 7.0 IT(AV) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Thyristors Surface Mount – 50 - 800V > 2N6400 Figure 3. On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Thermal Response © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Thyristors Surface Mount – 50 - 800V > 2N6400 Typical Characteristics Figure 6. Typical Gate Trigger Current vs. Pulse Width Figure 7. Typical Gate Trigger Current vs. Junction Temperature Figure 8. Typical Gate Trigger Voltage vs. Junction Temperature Figure 9. Typical Holding Current vs. Junction Temperature © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Thyristors Surface Mount – 50 - 800V > 2N6400 Dimensions Part Marking System SEATING PLANE B F 4 Q 12 4 C T S TO 220AB CASE 221A STYLE 3 A U 3 H 1 K Z 2 R L V D N Inches Millimeters 3 x= A= Y= WW G= J G Dim 2N640xG AYWW 0, 1, 2, 3, 4 or 5 Assembly Location Year = Work Week Pb Free Package Pin Assignment Min Max Min Max 1 Cathode A 0.570 0.620 14.48 15.75 2 Anode B 0.380 0.405 9.66 10.28 3 Gate C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 4 Anode F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. Ordering Information Device Package Shipping 2N6400G 2N6401G 500 Units / Box 2N6402G 2N6403G 2N6403TG TO-220AB (Pb-Free) 50 Units / Rail 2N6404G 500 Units / Box 2N6405G 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17
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