MCR12DSN-1G

Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN MCR12DSM, MCR12DSN Description The MCR12DSM and MCR12DSN are designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive Discharge Ignition); and small engines. Features • Small Size • Passivated Die Surface for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • UL Recognized compound meeting flammability rating V-0 • ESD Ratings: Human Body Model, 3B > 8000V Machine Model, C > 400V Pin Out 4 4 Functional Diagram G 1 2 3 A 1 2 3 K Additional Information Datasheet Resources Samples © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDRM VRRM 600 800 V On−State RMS Current (180º Conduction Angles; TC = 75ºC) IT(RMS) 12 A Average On-State Current (180º Conduction Angles; TC = 75ºC) IT (AV) 7.6 A Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A2s PGM 5.0 W PG (AV) 0.5 W Peak Repetitive Off−State Voltage (Note 1) (TC = − 40 to +110°C, Sine Wave, 50 to 60 Hz, RGK = 1 k Ω) MCR12DSM MCR12DSN Forward Peak Gate Power (Pulse Width ≤ 1.0 µsec, TC= 75°C) Forward Average Gate Power (t = 8.3 ms, TC = 75ºC) Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 75°C) IGM 2.0 A Operating Junction Temperature Range TJ -40 to +110 °C Storage Temperature Range Tstg -40 to +150 °C Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect component reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the component are exceeded. Thermal Characteristics Rating Symbol Value Thermal Resistance, Junction−to−Case RƟJC 2.2 Thermal Resistance, Junction−to−Ambient RƟJA 88 Thermal Resistance, Junction−to−Ambient (Note 2) RƟJA 80 Maximum Lead Temperature for Soldering Purposes (Note 3) TL 260 Unit °C/W °C Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1.0 k Ω)4 Symbol Min IDRM IRRM - - 10 - - 500 TJ = 25°C TJ = 110°C Typ Max Unit µA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Peak Reverse Gate Blocking Voltage, (IGR = 10 µA) VGRM 10 12.5 18 V Peak Reverse Gate Blocking Current, (VGR = 10 V) IGRM _ _ 1.2 µA V Peak Forward On−State Voltage (Note 5), (ITM = 20 A) Gate Trigger Voltage (Note 6) (VAK= 12 Vdc; RL = 100 Ω, TC =110º) Gate Trigger Voltage (Continuous dc) (Note 6) (VAK = 12 V; RL = 100 Ω) VTM TJ = 25°C TJ = –40°C IGT TJ = 25°C TJ = –40°C VGT TJ = 25°C TJ = –40°C Latching Current (VD = 12 V, IG = 2.0 mA, RGK = 1 kΩ) TJ = –40°C TJ = 25°C Peak Reverse Gate Blocking Current (VGR = 10 V) Turn-On Time (Source Voltage = 12 V, RS = 6.0 KΩ, IT = 16 A(pk), RGK = 1.0 KΩ) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 µs) – 1.3 1.9 5.0 12 200 _ _ 300 0.45 0.65 1.0 Unit µA V _ _ 1.5 0.2 – – 0.5 1.0 6.0 _ _ 10 0.5 1.0 6.0 _ _ 10 IRGM _ _ 1.2 µA tgt _ 2.0 5.0 µs TJ = 110°C Holding Current (VD = 12 V, Initiating Current = 200 mA, RGK = 1 kΩ) Max IH IL mA mA © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off−State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 K, TJ = 110°C) dv/dt 2.0 10 − V/µs Critical Rate of Rise of On−State Current (IPK = 50 A, PW = 40 sec, diG/dt = 1 A/sec, IGT = 10 mA) di/dt − 50 100 A/µs 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds. 4. Ratings apply for negative gate voltage or RGK = 1.0 kΩ Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Component should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 6. RGK current not included in measurement. Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current +Current VTM Anode+ On State IRRM at VRRM IH +Voltage Reverse Blocking Region (Off State) Reverse Avalanche Region IDRM at VDRM Forward Blocking Region (Off State) Anode- Figure 1. Average Current Derating Figure 2. On−State Power Dissipation © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN Figure 3. On−State Characteristics Figure 4. Transient Thermal Response Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN Figure 9. Holding Current vs Gate-Carthode Resistance Fig.10 Exponential Static dv/dt vs Gate-Carthode Resistance & Junction Temp Figure 11. Typical Gate Trigger Current vs Junction Temperature Figure 12. Typical Gate Trigger Voltage vs Junction Temperature © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN Dimensions Soldering Footprint A E b3 B 6.20 0.244 c2 4 L3 D 12 L4 C A b2 Z Detail A H 3 5.80 0.228 NOTE 7 e c Bottom View Side View b Top View Z 0.005 (0).13 M 2.58 0.102 3.00 0.118 C Bottom View 1.60 0.063 6.17 0.243 Alternate Construction H GAUGE PLANE L2 C Seating Plane L SCALE 3: 1 mm inches A1 L1 Detail A Rotated 90°C W Dim Inches Millimeters Min Max Min Max A 0.087 0.094 2.20 2.40 A1 0.000 0.005 0.00 0.12 b 0.022 0.030 0.55 0.75 b2 0.026 0.033 0.65 0.85 b3 0.209 0.217 5.30 5.50 c 0.019 0.023 0.49 0.59 c2 0.019 0.023 0.49 0.59 D 0.213 0.224 5.40 5.70 E 0.252 0.260 6.40 0.091 e H 0.374 0.406 9.50 L 0.058 0.070 1.47 0.114 L1 6.60 2.30 10.30 1.78 2.90 L2 0.019 0.023 0.49 L3 0.053 0.065 1.35 0.59 1.65 L4 0.028 0.039 0.70 1.00 Z 0.154 - 3.90 - 1. Dimensioning and tolerancing per asme y14.5m, 1994. 2. Controlling dimension: inch. 3. Thermal pad contour optional within di- mensions b3, l3 and z. 4. Dimensions d and e do not include mold flash, protrusions, or burrs. Mold flash, protrusions, or gate burrs shall l3 z not exceed 0.006 Inches per side. 5. Dimensions d and e are determined at the outermost extremes of the plastic body. 6. Datums a and b are determined at datum plane h. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 Thyristors Surface Mount – 100V -600V > MCR12DSM, MCR12DSN Dimensions Part Marking System 4 DPAK-3 Case 369D 1 2 TO251-3L POD B R 4 E V A 1 N F SEATING PLANE DPAK-3 Case 369D Style 4 Z -T- 2 3 F K G J G Inches Max Min Max A 0.213 0.224 5.40 5.70 B 0.252 0.260 6.40 6.60 C 0.087 0.094 2.20 2.40 D 0.024 0.030 0.60 0.75 E 0.022 0.026 0.55 0.65 F 0.022 0.03 0.58 0.091 0.046 0.050 1.18 0.019 0.023 0.49 0.59 K 0.291 0.315 7.40 8.00 N 0.031 0.038 0.78 0.98 R 0.209 0.217 5.30 5.50 0.065 1.35 0.063 Z 0.053 Cathode 2 Anode 3 Gate 4 Anode 0.78 J S Pin Assignment 1 2.30 H V = Device Code = M, or N = Year = Work Week = Pb-Free Package T Millimeters Min G R12DSx x Y WW G R1 2DSxG YWW D 3PL 0.13 (0.0005) H Dim R1 2DSxG YWW 3 C S DPAK-3 Case 369C Style 4 1.28 Ordering Information 1.60 0.150 1. Dimensioning and Tolerancing Per ANSI Y14.5M, 1982. 2. Controlling Dimension: Inch. STYLE 6:Pin 1. MT1 2. MT2 3. Gate 4. MT2 1.65 Device Package Type Package MCR12DSMT4G DPAK 369C MCR12DSN-1G IPAK 369D MCR12DSNT4G DPAK 369C 3.80 Shipping 2500 Tape & Reel 4000 Units/Box 2500 Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20