MG0675S-BN4MM

Power Module 600V 75A IGBT Module MG0675S-BN4MM RoHS ® Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE(sat) with positive temperature coefficient • Low switching losses • F  ast switching and short tail current Applications Agency Approvals AGENCY • H  igh frequency switching application AGENCY FILE NUMBER E71639 • Motion/servo control • UPS systems • Medical applications Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature TJ op Test Conditions Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index Min Typ -40 -40 AC, t=1min Max Unit 175 °C 150 °C 125 °C 3000 V 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 160 g Values Unit 600 V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions VCES Collector - Emitter Voltage TJ=25°C VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V 100 A TC=70°C 75 A tp=1ms 150 A 250 W TC=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t TJ=25°C 600 V TC=25°C 100 A TC=70°C 75 A tp=1ms 150 A TJ =125°C, t=10ms, VR=0V 660 A 2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG0675S-BN4MM 1 50 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 75A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=1.2mA 4.9 Collector - Emitter Saturation Voltage IC=75A, VGE=15V, TJ=25°C 5.8 6.5 V 1.45 1.9 V IC=75A, VGE=15V, TJ=125°C 1.6 1 mA 5 mA 400 nA IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCE=600V, VGE=0V, TJ=25°C VCE=600V, VGE=0V, TJ=125°C VCE=0V,VGE=±15V, TJ=125°C VCC=300V, IC=75A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=300V IC=75A RG =5.1Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 0 Ω 0.8 μC 4.6 nF 0.145 nF TJ =25°C 25 ns TJ =125°C 25 ns TJ =25°C 20 ns TJ =125°C 20 ns TJ =25°C 210 ns TJ =125°C 240 ns TJ =25°C 60 ns TJ =125°C 70 ns TJ =25°C 0.35 mJ TJ =125°C 0.5 mJ TJ =25°C 2.4 mJ TJ =125°C 2.8 mJ 380 A tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V Junction-to-Case Thermal Resistance (Per IGBT) RthJCD V 0.6 K/W 1.95 V Diode VF Forward Voltage IF=75A , VGE=0V, TJ =25°C 1.55 IF=75A , VGE=0V, TJ =125°C 1.50 V IF=75A , VR=300V diF/dt=-4000A/μs TJ =125°C 115 A IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy RthJC Junction-to-Case Thermal Resistance (Per Diode) MG0675S-BN4MM 6.0 μC 1.5 mJ 0.9 2 51 K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 75A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output characteristics 150 150 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 120 90 TJ =25°C IC (A) IC (A) 120 60 90 TJ =125°C 60 TJ =125°C 30 30 0 0 0.8 0.4 1.2 1.6 VCE˄V˅ 2.0 0 2.4 Figure 3: Typical Transfer characteristics 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor 150 6 VCE =20V 5 120 90 60 TJ =125°C 30 0 5 6 5 6 7 9 8 VGE˄V˅ 10 Eoff 2 0 11 40 50 120 90 Eoff 2 Eon 1 30 30 20 RG˄Ω˅ 150 4 0 0 10 165 VCC=300V RG=5.1Ω VGE=±15V TJ =125°C 3 0 Figure 6: Reverse Biased Safe Operating Area IC (A) Eon Eoff (mJ) 3 1 Figure 5: Switching Energy vs. Collector Current MG0675S-BN4MM Eon 4 Eon Eoff (mJ) IC (A) TJ =25°C VCC=300V IC=75A VGE=±15V TJ =125°C 60 90 IC˄A˅ 120 60 RG=5.1Ω VGE=±15V TJ =125°C 30 0 150 3 52 0 100 200 300 400 VCE˄V˅ 500 600 700 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 75A IGBT Module Figure 7: Diode Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 150 3 IF=75A VCE=300V TJ =125°C 120 IF (A) Erec (mJ) TJ =125°C 90 60 2 1 30 0 TJ =25°C 0 0.4 0.8 1.2 VF˄V˅ 1.6 2.0 0 20 30 40 50 Figure 10: Transient Thermal Impedance 1 RG=5.1Ω VCE=300V TJ =125°C Diode IGBT ZthJC (K/W) Erec (mJ) 3 10 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 4 0 2 0.1 1 0 0 MG0675S-BN4MM 30 60 90 IF (A) 120 0.01 0.001 150 4 53 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 75A IGBT Module Dimensions-Package S Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q MG0675S-BN4MM MG0675S-BN4MM 160g Bulk Pack 100 Part Marking System Part Numbering System MG06 75 S - B N4 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MG0675S-BN4MM WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE LOT NUMBER Space reserved for QR code 75: 75A MG0675S-BN4MM 5 54 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15