NGD8209NT4G

NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Littelfuse.com 12 AMPS 410 VOLTS VCE(on) 3 2.0 V @ IC = 6.0 A, VGE . 4.0 V Features • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices C RG G RGE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 445 VDC Collector−Gate Voltage VCER 445 VDC Gate−Emitter Voltage VGE 15 VDC IC 12 30 ADC AAC Rating Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V PD 94 0.63 Watts W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range E 4 1 2 MARKING DIAGRAM kV 8.0 3 DPAK CASE 369C STYLE 7 1 Gate YWW NGD 8209G 2 Collector 4 Collector 3 Emitter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Y = Year WW = Work Week G = Pb−Free Device ORDERING INFORMATION Specifications subject to change without notice. © 2016 Littelfuse, Inc. September 19, 2016 − Rev. 0 1 Device Package Shipping† NGD8209NT4G DPAK (Pb−Free) 2500 / Tape & Reel Publication Order Number: NGD8209N/D NGD8209N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 7.4 A, L = 10 mH, Starting TJ = 25°C Value EAS Unit mJ 274 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.6 °C/W Thermal Resistance, Junction to Ambient (Note 1) RθJA 105 TL 275 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds °C 1. When surface mounted to an FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 150°C 380 410 435 VDC IC = 10 mA TJ = −40°C to 150°C 390 420 445 TJ = 25°C − 1.0 25 TJ = 150°C − 9.0 50 TJ = −40°C − 0.5 15 TJ = 25°C − 0.5 1.0 TJ = 150°C − 10 30 TJ = −40°C − 0.05 0.5 TJ = 25°C 26 33 38 TJ = 150°C 29 36 41 TJ = −40°C 24 32 36 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage Gate−Emitter Clamp Voltage ICES IECS BVCES(R) VCE = 350 V, VGE = 0 V VCE = −24 V IC = −75 mA μADC mA VDC BVGES IG = 5.0 mA TJ = −40°C to 150°C 10 13 16 VDC IGES VGE = 10 V TJ = −40°C to 150°C 380 635 1000 μADC Gate Resistor RG − TJ = −40°C to 150°C − 70 − Ω Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ VDC Gate−Emitter Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) Threshold Temperature Coefficient (Negative) IC = 1.0 mA, VGE = VCE TJ = 25°C 1.0 1.42 2.0 TJ = 150°C 0.7 0.95 1.5 TJ = −40°C 1.1 1.62 2.2 − − − 3.5 − − mV/°C 2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%. Specifications subject to change without notice. © 2016 Littelfuse, Inc. September 19, 2016 − Rev.0 2 Publication Order Number: NGD8209N/D NGD8209N ELECTRICAL CHARACTERISTICS (continued) Symbol Characteristic Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.8 1.45 2.0 VDC TJ = 150°C 0.85 1.44 1.85 TJ = −40°C 1.0 1.5 1.95 TJ = 25°C 1.1 1.79 2.3 TJ = 150°C 1.2 1.9 2.2 TJ = −40°C 1.3 1.77 2.2 TJ = −40°C to 150°C 5.0 14 30 ON CHARACTERISTICS (continued) (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A Mhos 3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%. TYPICAL CHARACTERISTICS 70 5.0 V 50 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 TJ = 25°C 4.0 V 40 30 3.0 V 20 2.5 V 10 0 0 1 2 3 4 5 6 7 8 9 4.0 V 40 30 3.0 V 20 2.5 V 10 0 1 2 3 4 6 7 8 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 30 TJ = 150°C 5.0 V 40 4.0 V 30 3.0 V 20 2.5 V 10 0 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 5.0 V TJ = −40°C 50 0 10 50 0 60 1 2 3 4 5 6 7 8 9 150°C VCE = 10 V 25 25°C 20 15 10 5 0 10 −40°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Transfer Characteristics Specifications subject to change without notice. © 2016 Littelfuse, Inc. September 19, 2016 − Rev. 0 3 10 4.5 5.0 Publication Order Number: NGD8209N/D NGD8209N 2.00 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS IC = 10 A 1.75 IC = 8 A 1.50 IC = 5 A 1.25 IC = 3 A 1.00 0.75 0.50 0.25 VGE = 5 V 0 −50 −25 25 0 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 2.00 1.50 IC = 8 A 1.25 IC = 5 A 0.75 0.50 0.25 0 VGE(th), GATE THRESHOLD VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.75 IC = 8 A 1.25 IC = 5 A 1.00 IC = 3 A 0.75 0.50 0.25 0 TJ = 150°C 4 5 6 7 8 9 TJ = 25°C 4 5 6 7 8 9 10 VGE, GATE TO EMITTER VOLTAGE (V) Figure 6. Collector−to−Emitter Voltage vs. Gate−to−Emitter Voltage IC = 10 A 1.50 IC = 3 A 1.00 Figure 5. Collector−to−Emitter Saturation Voltage vs. Junction Temperature 2.00 IC = 10 A 1.75 10 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 −50 −30 −10 10 30 50 70 90 110 130 150 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Collector−to−Emitter Voltage vs. Gate−to−Emitter Voltage Figure 8. Gate Threshold Voltage vs. Junction Temperature Specifications subject to change without notice. © 2016 Littelfuse, Inc. September 19, 2016 − Rev. 0 4 Publication Order Number: NGD8209N/D NGD8209N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 2 H DETAIL A 3 c b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches Information furnished is believed to be accurate and reliable. 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Littelfuse.com Specifications subject to change without notice. © 2016 Littelfuse, Inc. September 19, 2016 − Rev. 5 Publication Order Number: NGD8209N/D