HMC523

HMC523 v00.1104 GaAs MMIC I/Q MIXER 15 - 23.6 GHz Typical Applications The HMC523 is ideal for: • Point-to-Point and Point-to-Multi-Point Radio Features Wide IF Bandwidth: DC - 3.5 GHz Image Rejection: 27 dB LO to RF Isolation: 50 dB High Input IP3: +25 dBm 3 MIXERS - CHIP • Digital Radio • Military • VSAT Functional Diagram General Description The HMC523 is a compact I /Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is taken with the chip mounted in a 50 Ohm test fixture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies. Electrical Specifications, TA = +25° C, IF= 100 MHz, LO = +17 dBm* Parameter Frequency Range, RF/LO Frequency Range, IF Conversion Loss (As IRM) Image Rejection 1 dB Compression (Input) LO to RF Isolation LO to IF Isolation IP3 (Input) Amplitude Balance Phase Balance 40 20 20 Min. Typ. 15 - 21 DC - 3.5 8 27 +15 50 25 +25 0.3 2 40 17 10 20 Max. Min. Typ. 21 - 23.6 DC - 3.5 9.5 25 +18 50 22 +20 0.3 3 11.5 Max. Units GHz GHz dB dB dBm dB dB dBm dB Deg * Unless otherwise noted, all measurements performed as downconverter. 3 - 138 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC523 v00.1104 GaAs MMIC I/Q MIXER 15 - 23.6 GHz Image Rejection vs. Temperature 40 Data Taken As IRM With External IF Hybrid Conversion Gain vs. Temperature 0 CONVERSION GAIN (dB) -5 IMAGE REJECTION (dB) 30 3 +25C +85C -55C -10 20 +25C -15 +85C -55C 10 -20 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) 0 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 Return Loss 0 CONVERSION GAIN (dB) RETURN LOSS (dB) -5 -5 -10 -15 +11 dBm +13 dBm +15 dBm +17 dBm +19 dBm -10 RF LO -20 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) -15 13 14 15 16 17 18 19 20 21 22 23 24 FREQUENCY (GHz) Input P1dB vs. Temperature 22 20 18 16 P1dB (dBm) Input IP3 vs. LO Drive 30 25 20 IP3 (dBm) 15 10 5 0 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm 14 12 10 8 6 4 2 0 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) +25C +85C -55C 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 139 MIXERS - CHIP HMC523 v00.1104 GaAs MMIC I/Q MIXER 15 - 23.6 GHz Quadrature Channel Data Taken Without IF Hybrid Isolations -10 IF Bandwidth* 0 -20 ISOLATION (dB) LO/IF2 -5 RESPONSE (dB) 3 MIXERS - CHIP -30 LO/IF1 -10 -40 LO/RF RF/IF2 RF/IF1 -15 -50 RETURN LOSS CONVERSION GAIN -60 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) -20 0.5 1 1.5 2 2.5 3 3.5 IF FREQUENCY (GHz) Amplitude Balance vs. LO Drive 4 3 2 1 0 -1 -2 -3 -4 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm Phase Balance vs. LO Drive 15 10 5 0 -5 -10 -15 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm Upconverter Performance Conversion Gain vs. LO Drive 0 Upconverter Performance Sideband Rejection vs. LO Drive 0 SIDEBAND REJECTION (dBc) -10 -20 -30 -40 -50 -60 PHASE BALANCE (degrees) AMPLITUDE BALANCE (dB) CONVERSION GAIN (dB) -5 LO = +11 dBm LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm -10 LO = +11 dBm LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm -15 -20 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) 13 14 15 16 17 18 19 20 21 22 23 24 RF FREQUENCY (GHz) * Conversion gain data taken with external IF hybrid 3 - 140 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC523 v00.1104 GaAs MMIC I/Q MIXER 15 - 23.6 GHz MxN Spurious Outputs Harmonics of LO nLO Spur at RF Port LO Freq. (GHz) 1 15.5 17 18.5 20 21.5 23 47 49 50 47 50 53 2 51 56 63 73 72 71 nLO mRF 0 1 2 3 4 0 xx 34 87 xx xx 1 -9 0 65 87 xx 2 29 46 82 92 84 3 xx 61 62 86 92 4 xx xx 87 90 92 3 MIXERS - CHIP 3 - 141 LO = + 15 dBm Values in dBc below input LO level measured at RF Port. RF = 17.6 GHz @ -10 dBm LO = 17.5 GHz @ +15 dBm Data taken without IF hybrid All values in dBc below IF power level Absolute Maximum Ratings RF / IF Input LO Drive Channel Temperature Continuous Pdiss (T=85°C) (derate 5.22 mW/°C above 85°C) Thermal Resistance (RTH) (junction to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +20 dBm + 27 dBm 150°C 340 mW Standard 191.5 °C/W -65 to +150 °C -55 to +85 deg °C Class 1A GP-2 Alternate [2] ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information [1] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” 4. BACKSIDE METALIZATION: GOLD 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC523 v00.1104 GaAs MMIC I/Q MIXER 15 - 23.6 GHz Pad Descriptions Pad Number Function Description This pad is AC coupled and matched to 50 Ohms from 15 to 23.6 GHz. Interface Schematic 1 RF 3 4 LO This pad is AC coupled and matched to 50 Ohms from 15 to 23.6 GHz. This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pad must not source/sink more than 3mA of current or die nonfunction and possible die failure will result. Pads 5 and 6 are alternate IF ports. The backside of the die must be connected to RF/DC ground. MIXERS - CHIP 2 (5) IF2 3 (6) IF1 GND Assembly Diagrams 3 - 142 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC523 v00.1104 GaAs MMIC I/Q MIXER 15 - 23.6 GHz Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 MIXERS - CHIP 3 - 143 RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible