X5083PZ-2.7A

DATASHEET X5083 FN8127 Rev 4.00 November 12, 2015 CPU Supervisor with 8Kbit SPI EEPROM This device combines four popular functions, Power-on Reset Control, Watchdog Timer, Supply Voltage Supervision, and Block Lock Serial EEPROM Memory in one package. This combination lowers system cost, reduces board space requirements, and increases reliability. Applying power to the device activates the power-on reset circuit which holds RESET active for a period of time. This allows the power supply and oscillator to stabilize before the processor can execute code. The Watchdog Timer provides an independent protection mechanism for microcontrollers. When the microcontroller fails to restart a timer within a selectable time out interval, the device activates the RESET signal. The user selects the interval from three preset values. Once selected, the interval does not change, even after cycling the power. The device’s low VCC detection circuitry protects the user’s system from low voltage conditions, resetting the system when VCC falls below the minimum VCC trip point. RESET is asserted until VCC returns to the proper operating level and stabilizes. Five industry standard VTRIP thresholds are available, however, Intersil’s unique circuits allow the threshold to be reprogrammed to meet custom requirements or to finetune the threshold for applications requiring higher precision. Pinouts 8 LD TSSOP ED RT O P RESET 1 8 UP SCK S SI VCC 2 7R X5083E O VSS CS/WDI L 6 3 B A WP 4 AIL 5 SO AV R E NG LO NO 8 LD SOIC, 8 LD PDIP CS/WDI SO WP VSS 1 8 2 7 3 X5083 6 4 5 VCC RESET SCK SI Features • Low VCC detection and reset assertion - Four standard reset threshold voltages 4.63V, 4.38V, 2.93V, 2.63V - Re-program low VCC reset threshold voltage using special programming sequence - Reset signal valid to VCC = 1V • Selectable time out watchdog timer • Long battery life with low power consumption - none of the array 000WD1 WD2001 --->block lock Q1: 0000h-00FFh--->lower quadrant (Q1) 000WD1 WD2010 --->block lock Q2: 0100h-01FFh--->Q2 000WD1 WD2011 --->block lock Q3: 0200h-02FFh--->Q3 000WD1 WD2100 --->block lock Q4: 0300h-03FFh--->upper quadrant (Q4) 000WD1 WD2101 --->block lock H1: 0000h-01FFh--->lower half of the array (H1) 000WD1 WD2110 --->block lock P0: 0000h-000Fh--->lower page (P0) 000WD1 WD2111 --->block lock Pn: 03F0h-03FFh--->upper page (PN) 0000 0101 READ STATUS: reads status register & provides write in progress status on SO pin 0000 0010 WRITE: write operation followed by address and data 0000 0011 READ: read operation followed by address FN8127 Rev 4.00 November 12, 2015 Page 7 of 21 X5083 Watchdog Timer The watchdog timer bits, WD0 and WD1, select the watchdog time out period. These nonvolatile bits are programmed with the WRSR instruction. A change to the Watchdog Timer, either setting a new time out period or turning it off or on, takes effect, following either the next command (read or write) or cycling the power to the device. The recommended procedure for changing the Watch-dog Timer settings is to do a WREN, followed by a write status register command. Then execute a soft-ware loop to read the status register until the MSB of the status byte is zero. A valid alternative is to do a WREN, followed by a write status register command. Then wait 10ms and do a read status command. TABLE 2. WATCHDOG TIMER DEFINITION STATUS REGISTER BITS WD1 WD0 WATCHDOG TIME OUT (TYPICAL) 0 0 1.4s 0 1 600ms 1 0 200ms 1 1 disabled (factory default) Read Sequence When reading from the EEPROM memory array, CS is first pulled low to select the device. The 8-bit READ instruction is transmitted to the device, followed by the 16-bit address. After the READ opcode and address are sent, the data stored in the memory at the selected address is shifted out on the SO line. The data stored in memory at the next address can be read sequentially by continuing to provide clock pulses. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to address $0000 allowing the read cycle to be continued indefinitely. The read operation is terminated by taking CS high. Refer to the read EEPROM array sequence (Figure 5). To read the status register, the CS line is first pulled low to select the device followed by the 8-bit RDSR instruction. After the RDSR opcode is sent, the contents of the status register are shifted out on the SO line. Refer to the read status register sequence (Figure 6). Write Sequence Prior to any attempt to write data into the device, the “Write Enable” Latch (WEL) must first be set by issuing the WREN instruction (Figure 7). CS is first taken LOW, then the WREN instruction is clocked into the device. After all eight bits of the instruction are transmitted, CS must then be taken HIGH. If the user continues the write operation without taking CS HIGH after issuing the WREN instruction, the write operation will be ignored. FN8127 Rev 4.00 November 12, 2015 To write data to the EEPROM memory array, the user then issues the WRITE instruction followed by the 16 bit address and then the data to be written. Any unused address bits are specified to be “0’s”. The WRITE operation minimally takes 32 clocks. CS must go low and remain low for the duration of the operation. If the address counter reaches the end of a page and the clock continues, the counter will roll back to the first address of the same page and overwrite any data that may have been previously written. For a write operation (byte or page write) to be completed, CS can only be brought HIGH after bit 0 of the last data byte to be written is clocked in. If it is brought HIGH at any other time, the write operation will not be completed (Figure 8). To write to the status register, the WRSR instruction is followed by the data to be written (Figure 9). Data bits 5, 6 and 7 must be “0”. Read Status Operation If there is not a nonvolatile write in progress, the read status instruction returns the block lock setting from the status register which contains the watchdog timer bits WD1, WD0, and the block lock bits IDL2-IDL0 (Figure 6). The block lock bits define the block lock condition (Table 1). The watchdog timer bits set the operation of the watchdog timer (Table 2). The other bits are reserved and will return ’0’ when read. See Figure 6. During an internal nonvolatile write operaiton, the Read Status Instruction returns a HIGH on SO in the first bit following the RDSR instruction (the MSB). The remaining bits in the output status byte are undefined. Repeated Read Status Instructions return the MSB as a ‘1’ until the nonvolatile write cycle is complete. When the nonvolatile write cycle is completed, the RDSR instruction returns a ‘0’ in the MSB position with the remaining bits of the status register undefined. Subsequent RDSR instructions return the Status Register Contents. See Figure 10. RESET Operation The RESET output is designed to go LOW whenever VCC has dropped below the minimum trip point and/or the watchdog timer has reached its programmable time out limit. The RESET output is an open drain output and requires a pull up resistor. Operational Notes The device powers-up in the following state: • The device is in the low power standby state. • A HIGH to LOW transition on CS is required to enter an active state and receive an instruction. • SO pin is high impedance. • The write enable latch is reset. • Reset signal is active for tPURST. Page 8 of 21 X5083 Data Protection The following circuitry has been included to prevent inadvertent writes: • A WREN instruction must be issued to set the write enable latch. • CS must come HIGH at the proper clock count in order to start a nonvolatile write cycle. • When VCC is below VTRIP , communications to the device are inhibited. CS 0 1 2 3 4 5 6 7 8 20 21 22 23 24 25 26 27 28 29 30 9 SCK Read Instruction (1 Byte) Byte Address (2 Byte) 15 14 SI SO 3 2 Data Out 1 0 High Impedance 7 6 5 4 3 2 1 0 FIGURE 5. READ OPERATION SEQUENCE CS 0 1 2 3 4 5 6 ... 7 SCK Read Status Instruction ... SI SO W D 1 W D 0 B L 2 B L 1 B L 0 ... SO = Status Reg When no Nonvolatile Write Cycle FIGURE 6. READ STATUS OPERATION SEQUENCE FN8127 Rev 4.00 November 12, 2015 Page 9 of 21 X5083 CS 0 1 2 3 4 5 6 7 SCK Instruction (1 Byte) SI High Impedance SO FIGURE 7. WREN/WRDI SEQUENCE CS 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31 SCK Instruction 16 Bit Address 15 14 13 SI 3 Data Byte 1 2 1 0 7 6 5 4 3 2 1 0 CS 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCK Data Byte 2 SI 7 6 5 4 3 Data Byte 3 2 1 0 7 6 5 4 3 Data Byte N 2 1 6 0 5 4 3 2 1 0 FIGURE 8. EEPROM ARRAY WRITE SEQUENCE CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 6 5 4 SCK Data Byte Instruction SI SO High Impedance 3 2 1 0 W W D D 1 0 B L 2 B L 1 B L 0 FIGURE 9. STATUS REGISTER WRITE SEQUENCE FN8127 Rev 4.00 November 12, 2015 Page 10 of 21 X5083 CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 READ STATUS INSTRUCTION READ STATUS INSTRUCTION SCK SI NONVOLATILE WRITE IN PROGRESS SO SO MSB HIGH while in the Nonvolatile write cycle SO MSB still HIGH indicates Nonvolatile write cycle still in progress CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 READ STATUS INSTRUCTION READ STATUS INSTRUCTION SCK SI NONVOLATILE WRITE ENDS BL0 BL1 BL2 WD1 WD0 4 3 2 1 0 SO 1st detected SO MSB LOW indicates end of Nonvolatile write cycle FIGURE 10. READ NONVOLATILE WRITE STATUS FN8127 Rev 4.00 November 12, 2015 Page 11 of 21 X5083 tWC CS 0 1 2 3 4 5 6 7 SCK NEXT INSTRUCTION SI Non-volatile Write Operation Wait tWC after a write for new operation, if not using polling procedure FIGURE 11. END OF NONVOLATILE WRITE (NO POLLING) Symbol Table WAVEFORM INPUTS OUTPUTS Must be steady Will be steady May change from LOW to HIGH Will change from LOW to HIGH May change from HIGH to LOW Will change from HIGH to LOW Don’t Care: Changes Allowed Changing: State Not Known N/A Center Line is High Impedance FN8127 Rev 4.00 November 12, 2015 Page 12 of 21 X5083 Absolute Maximum Ratings Operating Conditions Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . .-65°C to 135°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to 150°C Voltage on Any Pin with Respect To Vss . . . . . . . . . . . . . -1.0V to 7V D.C. Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . . 300°C Temperature Range Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C VCC Range -2.7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7V to 5.5V Blank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. DC Electrical Specifications (Over the recommended operating conditions unless otherwise specified.) LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICC1 VCC Write Current (Active) SCK = VCC x 0.1/VCC x 0.9 @ 5MHz, SO = Open 5 mA ICC2 VCC Read Current (Active) SCK = VCC x 0.1/VCC x 0.9 @ 5MHz, SO = Open 0.4 mA ISB1 VCC Standby Current WDT = OFF CS = VCC, VIN = VSS or VCC, VCC = 5.5V 1 µA ISB2 VCC Standby Current WDT = ON CS = VCC, VIN = VSS or VCC, VCC = 5.5V 50 µA ISB3 VCC Standby Current WDT = ON CS = VCC, VIN = VSS or VCC, VCC = 3.6V 20 µA ILI Input Leakage Current VIN = VSS to VCC 0.1 10 µA ILO Output Leakage Current VOUT = VSS to VCC 0.1 10 µA VIL (Note 1) Input LOW Voltage -0.5 VCC x 0.3 V VIH (Note 1) Input HIGH Voltage VCC x 0.7 VCC + 0.5 V VOL1 Output LOW Voltage VCC > 3.3V, IOL = 2.1mA 0.4 V VOL2 Output LOW Voltage 2V < VCC  3.3V, IOL = 1mA 0.4 V VOL3 Output LOW Voltage VCC  2V, IOL = 0.5mA 0.4 V VOH1 Output HIGH Voltage VCC > 3.3V, IOH = -1.0mA VCC - 0.8 V VOH2 Output HIGH Voltage 2V < VCC  3.3V, IOH = -0.4mA VCC - 0.4 V VOH3 Output HIGH Voltage VCC  2V, IOH = -0.25mA VCC - 0.2 V VOLRS Reset Output LOW Voltage IOL = 1mA 0.4 V Power-Up Timing SYMBOL PARAMETER MIN MAX UNIT tPUR (Note 2) Power-up to read operation 1 ms tPUW (Note 2) Power-up to write operation 5 ms MAX UNIT CONDITIONS 8 pF VOUT = 0V 6 pF VIN = 0V . Capacitance TA = +25°C, f = 1MHz, VCC = 5V SYMBOL TEST COUT (Note 2) Output capacitance (SO, RESET, RESET) CIN (Note 2) Input capacitance (SCK, SI, CS, WP) NOTES: 1. VIL min. and VIH max. are for reference only and are not tested. 2. This parameter is periodically sampled and not 100% tested. FN8127 Rev 4.00 November 12, 2015 Page 13 of 21 X5083 Equivalent A.C. Load Circuit at 5V VCC 5V 5V 3.3k 1.64k SO OUTPUT A.C. Test Conditions Input pulse levels VCC x 0.1 to VCC x 0.9 Input rise and fall times 10ns Input and output timing level VCC x 0.5 RESET 1.64k 30pF 100pF AC Electrical Specifications (Over recommended operating conditions, unless otherwise specified) 2.7V-5.5V SYMBOL PARAMETER MIN MAX UNIT 0 3.3 MHz DATA INPUT TIMING fSCK Clock frequency tCYC Cycle time 300 ns tLEAD CS lead time 150 ns tLAG CS lag time 150 ns tWH Clock HIGH time 130 ns tWL Clock LOW time 130 ns tSU Data setup time 20 ns tH Data hold time 20 ns tRI (Note 3) Input rise time 2 µs tFI (Note 3) Input fall time 2 µs tCS CS deselect time tWC (Note 4) Write cycle time 100 ns 10 ms 3.3 MHz DATA OUTPUT TIMING fSCK Clock frequency tDIS Output disable time 150 ns Output valid from clock low 130 ns tV 0 tHO Output hold time 0 ns tRO (Note 3) Output rise time 50 ns tFO (Note 3) Output fall time 50 ns NOTES: 3. This parameter is periodically sampled and not 100% tested. 4. tWC is the time from the rising edge of CS after a valid write sequence has been sent to the end of the self-timed internal nonvolatile write cycle. FN8127 Rev 4.00 November 12, 2015 Page 14 of 21 X5083 Serial Output Timing CS tCYC tWH tLAG SCK tV SO tWL tHO MSB Out tDIS MSB–1 Out LSB Out ADDR LSB IN SI Serial Input Timing tCS CS tLEAD tLAG SCK tSU tH SI tRI MSB IN tFI LSB IN High Impedance SO Power-Up and Power-Down Timing VCC VTRIP tPURST tPURST 0 Volts tR VTRIP tF tRPD RESET FN8127 Rev 4.00 November 12, 2015 Page 15 of 21 X5083 RESET Output Timing SYMBOL PARAMETER MIN TYP MAX UNIT VTRIP Reset trip point voltage, X5083PT-4.5A (Note 6) Reset trip point voltage, X5083PT Reset trip point voltage, X5083PT-2.7A Reset trip point voltage, X5083PT-2.7 4.5 4.25 2.85 2.55 4.63 4.38 2.93 2.63 4.75 4.5 3.00 2.7 V tPURST Power-up reset time out 100 200 280 ms 500 ns tRPD (Note 5) VCC detect to reset/output tF (Note 5) VCC fall time 0.1 ns tR (Note 5) VCC rise time 0.1 ns 1 V VRVALID Reset valid VCC NOTES: 5. This parameter is periodically sampled and not 100% tested. 6. PT = Package/Temperature CS vs. RESET Timing CS tCST RESET tWDO tRST tWDO tRST RESET Output Timing SYMBOL MIN TYP MAX UNIT Watchdog time out period, WD1 = 1, WD0 = 1(default) WD1 = 1, WD0 = 0 WD1 = 0, WD0 = 1 WD1 = 0, WD0 = 0 100 450 1 OFF 200 600 1.4 300 800 2 ms ms sec tCST CS pulse width to reset the watchdog 400 tRST Reset time out 100 tWDO PARAMETER FN8127 Rev 4.00 November 12, 2015 ns 200 300 ms Page 16 of 21 X5083 VTRIP Programming Timing Diagram VCC (VTRIP) VTRIP tTSU tTHD VP VPE tVPS tVPH tPCS CS tVPO tRP SCK SI 06h WREN 02h Write 0001h (set) 0003h (reset) Addr. 00 Data VTRIP Programming Parameters PARAMETER DESCRIPTION MIN MAX UNIT tVPS VTRIP program enable voltage setup time 1 µs tVPH VTRIP program enable voltage hold time 1 µs tPCS VTRIP programming CS inactive time 1 µs tTSU VTRIP setup time 1 µs tTHD VTRIP hold (stable) time 10 ms tWC VTRIP write cycle time tVPO VTRIP program enable voltage off time (between successive adjustments) 0 µs tRP VTRIP program recovery period (between successive adjustments) 10 ms VP Programming voltage 15 18 V VTRIP programmed voltage range 2.0 5.0 V VTRIP program variation after programming (0-75°C). (programmed at 25°C) -25 +25 mV VTRAN Vtv 10 ms NOTES: 7. VTRIP programming parameters are periodically sampled and are not 100% tested. 8. For custom VTRIP settings, Contact Factory. FN8127 Rev 4.00 November 12, 2015 Page 17 of 21 X5083 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION November 12, 2015 FN8127.4 CHANGE Updated Ordering Information table on page 3. Added Revision History and About Intersil sections. Updated POD MDP0027 to POD M8.15E. About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support. FN8127 Rev 4.00 November 12, 2015 Page 18 of 21 X5083 Package Outline Drawing M8.15E 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE Rev 0, 08/09 4 4.90 ± 0.10 A DETAIL "A" 0.22 ± 0.03 B 6.0 ± 0.20 3.90 ± 0.10 4 PIN NO.1 ID MARK 5 (0.35) x 45° 4° ± 4° 0.43 ± 0.076 1.27 0.25 M C A B SIDE VIEW “B” TOP VIEW 1.75 MAX 1.45 ± 0.1 0.25 GAUGE PLANE C SEATING PLANE 0.10 C 0.175 ± 0.075 SIDE VIEW “A 0.63 ±0.23 DETAIL "A" (1.27) (0.60) NOTES: (1.50) (5.40) 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.05 4. Dimension does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. 5. The pin #1 identifier may be either a mold or mark feature. 6. Reference to JEDEC MS-012. TYPICAL RECOMMENDED LAND PATTERN FN8127 Rev 4.00 November 12, 2015 Page 19 of 21 X5083 Plastic Dual-In-Line Packages (PDIP) E D A2 SEATING PLANE L N A PIN #1 INDEX E1 c e b A1 NOTE 5 1 eA eB 2 N/2 b2 MDP0031 PLASTIC DUAL-IN-LINE PACKAGE SYMBOL PDIP8 PDIP14 PDIP16 PDIP18 PDIP20 TOLERANCE A 0.210 0.210 0.210 0.210 0.210 MAX A1 0.015 0.015 0.015 0.015 0.015 MIN A2 0.130 0.130 0.130 0.130 0.130 ±0.005 b 0.018 0.018 0.018 0.018 0.018 ±0.002 b2 0.060 0.060 0.060 0.060 0.060 +0.010/-0.015 c 0.010 0.010 0.010 0.010 0.010 +0.004/-0.002 D 0.375 0.750 0.750 0.890 1.020 ±0.010 E 0.310 0.310 0.310 0.310 0.310 +0.015/-0.010 E1 0.250 0.250 0.250 0.250 0.250 ±0.005 e 0.100 0.100 0.100 0.100 0.100 Basic eA 0.300 0.300 0.300 0.300 0.300 Basic eB 0.345 0.345 0.345 0.345 0.345 ±0.025 L 0.125 0.125 0.125 0.125 0.125 ±0.010 N 8 14 16 18 20 Reference NOTES 1 2 Rev. B 2/99 NOTES: 1. Plastic or metal protrusions of 0.010” maximum per side are not included. 2. Plastic interlead protrusions of 0.010” maximum per side are not included. 3. Dimensions E and eA are measured with the leads constrained perpendicular to the seating plane. 4. Dimension eB is measured with the lead tips unconstrained. 5. 8 and 16 lead packages have half end-leads as shown. FN8127 Rev 4.00 November 12, 2015 Page 20 of 21 X5083 Thin Shrink Small Outline Plastic Packages (TSSOP) M8.173 N INDEX AREA E 0.25(0.010) M E1 2 SYMBOL 3 0.05(0.002) -A- INCHES GAUGE PLANE -B1 8 LEAD THIN SHRINK NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M L A D -C- e  A2 A1 b 0.10(0.004) M 0.25 0.010 SEATING PLANE c 0.10(0.004) C A M B S MIN 1. These package dimensions are within allowable dimensions of JEDEC MO-153-AC, Issue E. MILLIMETERS MIN MAX NOTES A - 0.047 - 1.20 - A1 0.002 0.006 0.05 0.15 - A2 0.031 0.051 0.80 1.05 - b 0.0075 0.0118 0.19 0.30 9 c 0.0035 0.0079 0.09 0.20 - D 0.116 0.120 2.95 3.05 3 E1 0.169 0.177 4.30 4.50 4 e 0.026 BSC 0.65 BSC - E 0.246 0.256 6.25 6.50 - L 0.0177 0.0295 0.45 0.75 6 8o 0o N NOTES: MAX  8 0o 8 7 8o Rev. 1 12/00 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E1” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees) © Copyright Intersil Americas LLC 2005-2015. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN8127 Rev 4.00 November 12, 2015 Page 21 of 21