OP580

Silicon Phototransistor OP580 Features: • • • • Wide acceptance angle Fast response time Plastic leadless chip carrier (PLCC) Moisture Sensitivity Level: MSL2 or > Description: The OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier that is compatible with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the OP280 infrared LED. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: • • Non-contact position sensing Datum detection Ordering Information • • Part Number OP580 Machine automation Optical encoders Sensor Phototransistor Viewing Angle 100° Lead Length N/A 1 2 DIMENSIONS ARE IN: RoHS Pin # Transistor 1 Collector 2 Emitter [MILLIMETERS] INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue 1.3 05/10 Page 1 of 3 Silicon Phototransistor OP580 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -40o C to +85o C Operating Temperature Range -25o C to +85o C 260° C(1) Lead Soldering Temperature Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5V Collector Current 20 mA 75 mW(2) Power Dissipation Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL IC(ON) VCE(SAT) ICE0 PARAMETER MIN TYP MAX UNITS 1.0 - - mA VCE = 5.0 V, EE = 5.0 mW/cm2(3) Collector-Emitter Saturation Voltage - - 0.4 V IC = 100 µA, EE = 2.0 mW/cm2(3) Collector-Emitter Dark Current - - 100 nA VCE = 5.0 V, EE = 0(4) On-State Collector Current TEST CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA Rise Time , Fall Time - 15 - µs IC = 1 mA, RL = 1 KΩ tr, tf Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.17 mW/° C above 25° C. 3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formula ICEO = 10(0.04 Ta-3.4) where Ta is the ambient temperature in ° C. Relative Response vs Angular Position 100 100 80 80 Relative Response (%) Relative Response (%) Relative Response vs Wavelength 60 40 60 40 20 20 0 0 400 500 600 700 800 900 Wavelength (nm) 1000 1100 -90 -60 -30 0 30 60 90 Angular Position (Degrees) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue 1.3 05/10 Page 2 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor OP580 Relative On-State Collector Current vs Irradiance Relative On-State Collector Current vs Temperature 140 Normalized at EE = 5 mW/cm2 Conditions: VCE = 5 V, λ = 935 nm, TA = 25° C 140 130 Relative Collector Current (%) Relative Collector Current (%) 160 120 100 80 60 40 Normalized at TA = 25° C . Conditions: VCE = 5 V, λ = 935 nm, TA = 25° C 120 110 100 90 -40°C 80 70 20 0 1 2 3 4 5 6 7 -25 8 0 2 25 50 75 100 Temperature (°C) EE rradiance (mW/cm ) Relative On-State Collector Current vs Collector-Emitter Voltage Collector-Emitter Dark Current vs Temperature 1.4 1000 Conditions: Ee = 0 mW/ cm2 VCE = 10V IC(ON) - On-State Collector Current (mA) Collector-Emitter Dark Current (nA) 80°C 100 10 1 1.2 2 cm W/ 6m 2 m W/c 5m 1.0 2 m 4 mW/c 0.8 2 3 mW/cm 0.6 2 mW/cm2 0.4 0.2 1 mW/cm2 0 -25 0 25 50 Temperature (°C) 75 100 0 0.1 0.2 0.3 0.4 0.5 Collector-Emitter Voltage (V) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue 1.3 05/10 Page 3 of 3