IRG4BC30

PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-cha nnel Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 31 17 120 120 12 120 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RqJC RqJC RqCS RqJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 1.2 2.5 -----80 ------ Units °C/W g (oz) www.irf.com 1 12/8/98 IRG4BC30FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltageƒ 600 DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance „ 6.1 ICES Zero Gate Voltage Collector Current ------V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. ---0.69 1.59 1.99 1.70 ----11 10 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250µA ---- V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 17A VGE = 15V ---V IC = 31A See Fig. 2, 5 ---IC = 17A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE = 100V, IC = 17A 250 µA VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 7.5 1100 74 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 77 IC = 17A 12 nC VCC = 400V See Fig. 8 28 VGE = 15V ---TJ = 25°C ---ns IC = 17A, VCC = 480V 350 VGE = 15V, RG = 23W 230 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 3.9 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 17A, VCC = 480V ---VGE = 15V, RG = 23W ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 2 www.irf.com IRG4BC30FD 20 16 Load Current ( A ) D uty cy cle: 50% TJ = 125°C T sink = 90° C G ate drive as s pecified Turn-on loss es inc lude effec ts of rev ers e rec overy Power D iss ipa tion = 21W 12 6 0 % o f ra te d vo lt a g e 8 I 4 0 0.1 1 10 A 100 f, Freq uenc y ( kH z ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 100 TJ = 25°C I C , Collector-to-Emitter Current (A) 100 T J = 150°C TJ = 150°C T J = 25°C 10 10 1 1 V G E = 15V 20µs PULSE WIDTH A 10 1 5 6 7 8 9 V C C = 50V 5µs PULSE WIDTH A 10 11 12 13 V C E , Collector-to-Emitter Volta g e ( V ) VG E , Gate-to-Emitter Volta g e ( V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30FD 40 V G E = 15V 2.5 V C E , Collector-to-Emitter Voltage (V) V G E = 1 5V 80µs PULSE WIDTH I C = 34A M axim um D C C ollector C urrent (A ) 30 2.0 20 I C = 17A 1.5 10 I C = 8.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 T C , C as e Te m p e ra ture (°C ) T J , Junction Temperature ( °C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 T herm al R esponse (Z thJ C ) 1 D = 0 .5 0 0.2 0 0.1 0 PD M 0.1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t2 N o te s : 1 . D u ty fac tor D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z th J C + T C 0.0001 0.00 1 0.01 0.1 1 10 t 1 , R e cta n gu la r P u lse D ura tio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30FD 2000 20 1600 V G E , Gate-to-Emitter Voltage (V) A VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc SHORTED VC E = 4 00V I C = 17A 16 C, Capacitance (pF) 1200 C i es 12 800 8 C o es 400 4 C r es 0 1 10 0 0 10 20 30 40 50 A 60 100 V C E , Collector-to-Emitter Volta g e ( V ) Q g , Total Gate Char g e ( nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.20 Total Switchig Losses (mJ) 2.10 Total Switchig Losses (mJ) VC C VG E TJ IC = 4 80V = 15V = 25°C = 17A 10 IC = 34A I C = 17A 1 2.00 I C = 8.5A 1.90 1.80 0 20 40 60 A 80 0.1 R G = 23 Ω V G E = 1 5V V C C = 480V -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( Ω ) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30FD 8.0 6.0 I C , C o lle cto r-to -E m itte r C u rre n t (A ) Total Switchig Losses (mJ) RG TJ VCC VGE = = = = 23 Ω 1 50°C 480V 15V 1000 VG E E 2 0V G= T J = 125 °C 100 S A FE O P E R A TIN G A R E A 4.0 10 2.0 0.0 0 10 20 30 40 A 1 1 10 100 1000 I C , Collector-to-Emitter Current ( A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30FD 160 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 120 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C I F = 24A I F = 12A 80 I IR R M - (A ) I F = 24A 10 t rr - (n s) I F = 12A I F = 6.0A I F = 6 .0A 40 0 100 d i f /d t - (A /µ s) 1000 1 100 1000 d i f /d t - (A /µ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 400 d i(re c)M /d t - (A /µ s) 1000 Q R R - (n C ) IF = 6.0A I F = 24A I F = 12A I F = 12A 100 200 I F = 6.0A I F = 24A 0 100 d i f /d t - (A /µ s) 1000 10 100 1000 d i f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC30FD Same t y pe device as D .U.T. 90% 80% of Vce 430µF D .U .T. Vge VC 10% 90% t d(off) 10% IC 5% t d(on) tr tf t=5µs E on E ts = (Eon +Eoff ) Eoff Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = ∫ trr id dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ie dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 ∫ E rec = ∫ t4 V d id dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µ F 100 V Vc* D.U.T. R L= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC30FD Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23W (figure 19) ƒ Pulse width £ 80µs; duty factor £ 0.1%. „ Pulse width 5.0µs, single shot. Case Outline — TO-220AB 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A 6.47 (.255) 6.10 (.240) 1.15 (.045) M IN -B- 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 19 82 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T LIN E T O -220 A B . 3X 14.09 (.555) 13.47 (.530) 3.96 (.160) 3.55 (.140) LE A D 1234- A S S IG N M E N T S GATE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 0.93 (.037) 0.69 (.027) MBAM 1.40 (.055) 3 X 1.15 (.045) 2.54 (.100) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) CONFORM S TO JEDEC OUTLINE TO-220AB D im en sion s in M illim ete rs an d (In ch es) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98 10 www.irf.com