PD - 91612C
IRG4PH40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package
C
Ultra Fast Speed IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
n-channel
Benefits
• Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
1200 41 21 82 82 ± 20 270 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
––– 0.24 ––– 6 (0.21)
Max.
0.77 ––– 40 –––
Units
°C/W g (oz)
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1
7/7/2000
IRG4PH40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES
IGES
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 1200 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C — 2.43 3.1 Collector-to-Emitter Saturation Voltage — 2.97 — V — 2.47 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -11 — mV/°C Forward Transconductance U 16 24 — S — — 250 Zero Gate Voltage Collector Current — — 2.0 µA — — 5000 Gate-to-Emitter Leakage Current — — ±100 nA
Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 21A VGE = 15V IC = 41A See Fig.2, 5 IC = 21A , TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 21A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 10V, TJ = 25°C VGE = 0V, VCE = 1200V, TJ = 150°C VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 86 13 29 24 24 220 180 1.04 3.40 4.44 24 25 310 380 7.39 13 1800 120 18 Max. Units Conditions 130 IC = 21A 20 nC VCC = 400V See Fig. 8 44 VGE = 15V — — TJ = 25°C ns 330 IC = 21A, VCC = 960V 270 VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 5.2 — TJ = 150°C, — IC = 21A, VCC = 960V ns — VGE = 15V, RG = 10Ω — Energy losses include "tail" — mJ See Fig. 11, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PH40U
50 F o r b o th :
T ria n g u la r w a ve :
I
40
D uty c yc le: 50% T J = 125 ° C T s ink = 90 ° C G ate driv e as spec ified
P o w e r D is s ip a tio n = 3 5 W
Load Current ( A )
C la m p vo l ta g e : 8 0 % o f ra te d
30 S q u a re wave : 6 0 % o f ra te d vo l ta g e 20
I
10
Id e a l d io de s
0 0.1 1 10
A
100
f, Freq uenc y ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
TJ = 150 o C
10
10
TJ = 150 o C
TJ = 25 oC
TJ = 25 o C V = 15V 20µs PULSE WIDTH
GE 1 10
1
1 5 6 7
V = 50V 5µs PULSE WIDTH
CC 8 9 10
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PH40U
50 4.0
40
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
I C = 42 A
Maximum DC Collector Current(A)
3.0
30
I C = 21 A I C =10.5 A
2.0
20
10
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( ° C)
TTJ Junction Temperature ( °C °)C) J , , Junction Temperature (
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH40U
4000
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
3000
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 21A
16
Cies
2000
12
8
1000
C oes C res
4
0 1 10 100
0 0 20 40 60 80 100
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
5.0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 960V V GE = 15V TJ = 25 ° C 4.8 I C = 21A
100
RG = 10Ω Ohm VGE = 15V VCC = 960V
IC = 42 A IC = 21 A IC = 10.5 A
10
4.6
4.4
1
4.2
4.0 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RGRGGate Resistance (Ohm) , , Gate Resistance ( Ω )
TJ , Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PH40U
25.0
15.0
10.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC 20.0 VGE
= 10Ω Ohm = 150 ° C = 960V = 15V
1000
VGE = 20V T J = 125 oC
100
10
5.0
0.0 0 10 20 30 40
SAFE OPERATING AREA
1 50 1 10 100 1000 10000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRG4PH40U
L 50V 1 00 0V VC *
0 - 960V
D .U .T.
RL = 960V 4 X I C@25°C
480µF 960V R
Q
* Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 960V
D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
Q
R
90 %
S
10 % 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
1 0% IC 5% t d (o n )
tr Eon E ts = (E o n +E o ff )
tf t =5µ s E o ff
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IRG4PH40U
Case Outline and Dimensions TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7)
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4
N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3
2X
5 .5 0 (.2 17 ) 4 .5 0 (.1 77 )
-C-
LEAD 1234-
A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R
*
1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 )
4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 )
*
3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X
L O N G E R L E A D E D ( 2 0m m ) V E R S IO N A V A IL A B LE ( T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER
3X
1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s ion s in M illim e te rs a n d (In c h es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00
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