IRG4RC10

PD - 91732A IRG4RC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 14 8.0 18 18 ± 20 110 38 15 -55 to + 150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. ––– ––– 0.3 (0.01) Max. 3.3 50 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 8/30/99 IRG4RC10S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.64 — V/°C VGE = 0V, IC = 1.0mA VGE = 15V — 1.58 1.7 IC = 8.0A Collector-to-Emitter Saturation Voltage — 2.05 — IC = 14A See Fig.2, 5 V — 1.68 — IC = 8.0A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -9.5 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance … 3.7 5.5 — S VCE = 100V, IC = 8.0A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 15 22 IC = 8.0A 2.4 3.6 nC VCC = 400V See Fig. 8 6.5 9.8 VGE = 15V 25 — 28 — TJ = 25°C ns 630 950 IC = 8.0A, VCC = 480V 710 1100 VGE = 15V, RG = 100Ω 0.14 — Energy losses include "tail" 2.58 — mJ See Fig. 9, 10, 14 2.72 4.3 24 — TJ = 150°C, 31 — IC = 8.0A, VCC = 480V ns 810 — VGE = 15V, RG = 100Ω 1300 — Energy losses include "tail" 3.94 — mJ See Fig. 11, 14 7.5 — nH Measured 5mm from package 280 — VGE = 0V 30 — pF VCC = 30V See Fig. 7 4.0 — ƒ = 1.0MHz  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω, (See fig. 13a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4RC10S 3.0 For both: Triangular wave: Load Current ( A ) Duty cycle: 50% TJ = 125˚C Tsink 90˚C = Gate drive as specified Power Dissipation = 0.70W 2.0 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 1.0 Ideal diodes 0.0 0.1 1 10 ) 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 °C 10 T = 150 °C J I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 10 TJ = 150 °C TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 5µs PULSE WIDTH 6 8 10 12 1 0.8 V GE = 15V 20µs PULSE WIDTH 1.2 1.6 2.0 2.4 2.8 3.2 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4RC10S 16 3.00 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH I C = 16 A Maximum DC Collector Current(A) 12 2.50 8 2.00 IC = 8A 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10S 500 400 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 8A C, Capacitance (pF) Cies 300 15 Coes 200 10 100 Cres 5 0 1 10 100 0 0 5 10 15 20 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.8 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 °C I C = 8.0A 100 RG = Ohm 100Ω VGE = 15V VCC = 480V IC = 16 A IC = IC = 8A 4A 10 2.7 1 2.6 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG ,, Gate Resistance (Ohm) RG Gate Resistance ( Ω ) TJ , Junction Temperature ( ° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4RC10S 12 Total Switching Losses (mJ) 8 I C , Collector Current (A) RG TJ VCC 10 VGE 100 = OhmΩ = 150 ° C = 480V = 15V 100 VGE = 20V T J = 125 oC 6 10 4 2 SAFE OPERATING AREA 0 0 4 8 12 16 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA L 50V 10 0 0V VC * D .U .T. RL = 0 - 480V 480V 4 X I C@25°C 480µF 960V ‚  * Driver s am e t y p e a s D .U .T .; V c = 80 % of Vc e ( m ax ) * Note: Due to the 5 0V p ow e r su p p l y , p uls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V  ‚ ƒ * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 6 www.irf.com IRG4RC10S  ‚ 90 % ƒ 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50) -A5.46 (.2 15 ) 5.21 (.2 05 ) 4 6.45 (.2 45 ) 5.68 (.2 24 ) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 3 -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) M AMB 0.51 (.0 20 ) M IN. 1 0.42 (.4 10 ) 9 .4 0 (.37 0) LEAD ASSIGNMENTS 2 .3 8 (.09 4) 2 .1 9 (.08 6) 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 1.2 7 (.050 ) 0.8 8 (.035 ) LE AD A SSGATE E NTS 1 - IG N M 1 - G ATE 2 - COLLECTOR 2 - D RA IN 3 - EMITTER 3 - SO U R C E 4 - COLLECTOR 4 - D RA IN 0 .58 (.0 23) 0 .46 (.0 18) N O TE S: 1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 . 2 C O N TR O LLING D IM EN S IO N : INC H . 3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A. 4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP, SO L D ER D IP M AX. +0 .16 (.00 6). www.irf.com 7 IRG4RC10S Tape & Reel Information TO-252AA TR TRR TRL 1 6.3 ( .641 ) 1 5.7 ( .619 ) 16 .3 ( .641 ) 15 .7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/99 8 www.irf.com