IRL3103

PD - 91337 IRL3103 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 12mΩ G S ID = 64A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 64 45 220 94 0.63 ± 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.6 ––– 62 Units °C/W www.irf.com 1 3/16/01 IRL3103 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Min. 30 ––– ––– ––– 1.0 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12 VGS = 10V, ID = 34A „ mΩ 16 VGS = 4.5V, ID = 28A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 34A„ 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, T J = 150°C 100 VGS = 16V nA -100 VGS = -16V 33 ID = 34A 5.9 nC VDS = 24V 17 VGS = 4.5V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 34A ––– RG = 1.8Ω ––– VGS = 4.5V, See Fig. 10 „ Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 1650 ––– VGS = 0V 650 ––– VDS = 25V 110 ––– pF ƒ = 1.0MHz, See Fig. 5 1320…130† mJ IAS = 34A, L = 0.22mH Typ. ––– 0.028 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 8.9 120 14 9.1 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 64 ––– ––– showing the A G integral reverse ––– ––– 220 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V „ ––– 57 86 ns TJ = 25°C, IF = 34A ––– 110 170 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. ‚ Starting TJ = 25°C, L = 220µH TJ ≤ 175°C RG = 25Ω, IAS = 34A, VGS=10V (See Figure 12) † This is a calculated value limited to TJ = 175°C . ƒ ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, 2 www.irf.com IRL3103 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 100 2.7V 10 10 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 56A TJ = 25 ° C TJ = 175 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 100 1.5 1.0 10 0.5 1 2.0 V DS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3103 3000 2500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 34A 12 C, Capacitance (pF) VDS = 24V VDS = 15V 2000 Ciss 9 1500 Coss 6 1000 500 3 Crss 1 10 100 0 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 100 TJ = 175 ° C ID , Drain-to-Source Current (A) 100 10 100µsec 10 1msec Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 1 TJ = 25 ° C 10msec 100 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 1 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3103 70 VDS 60 RD VGS RG D.U.T. + I D , Drain Current (A) 50 -VDD 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 20 10 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3103 240 EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 200 VD S L D R IV E R BOTTOM ID 14A 24A 34A 160 RG VV 2 0GS D .U .T IA S tp 0 .0 1 Ω + - VD D A 120 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3103 Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL3103 Package Outline TO-220AB Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com