IS29GL128-70SLEB

IS29GL256 IS29GL128 256Mb/128Mb 3.0V PAGE MODE PARALLEL FLASH MEMORY DATA SHEET IS29GL256/128 IS29GL256/128 256/128 Megabit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. • 8-word/16-byte page read buffer • 32-word/64-byte write buffer reduces overall programming time for multiple-word updates • Secured Silicon Region (SSR) - 512-word/1024-byte sector for permanent, secure identification - 256-word Factory Locked SSR and 256-word Customer Locked SSR • Uniform 64Kword/128KByte Sector Architecture • Suspend and Resume commands for Program and Erase operations • Write operation status bits indicate program and erase operation completion • Support for CFI (Common Flash Interface) • Volatile and non-volatile methods of Advanced Sector Protection • WP#/ACC input - Accelerates programming time (when VHH is applied) for greater throughput during system production - Protects first or last sector regardless of sector protection settings • Hardware reset input (RESET#) resets device • Ready/Busy# output (RY/BY#) detects program or erase cycle completion • Minimum 100K program/erase endurance cycles. • Data retention : 20 years (TYP) • - Package Options 56-pin TSOP 64-ball 13mm x 11mm BGA (Call Factory) 64-ball 9mm x 9mm BGA 56-ball 9mm x 7mm BGA (Call Factory) • Temperature Range - Extended Grade: -40°C to +105°C - Automotive Grade: -40°C to +125°C Note: 1. 80ns at Vcc=2.7V~3.6V, VIO=2.7V~3.6V. 90ns at Vcc=2.7V~3.6V, VIO=1.65V ~ Vcc. GENERAL DESCRIPTION The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 2 IS29GL256/128 CONNECTION DIAGRAMS Figure 1.1 56-pin Standard TSOP (Top View) (1) (2) NC/A23 1 56 RFU A22 2 55 RFU A15 3 54 A16 A14 4 53 BYTE# A13 A12 5 52 VSS 6 51 DQ15/A-1 A11 7 50 DQ7 A10 8 49 DQ14 A9 9 48 DQ6 A8 10 47 DQ13 A19 11 46 DQ5 A20 12 45 DQ12 WE# 13 44 DQ4 RESET# 14 43 VCC A21 15 42 DQ11 WP#/ACC 16 41 DQ3 RY/BY# 17 40 DQ10 A18 18 39 DQ2 A17 19 38 DQ9 A7 20 37 DQ1 A6 21 36 DQ8 A5 22 35 DQ0 A4 23 34 OE# A3 24 33 VSS A2 25 32 CE# A1 26 31 A0 RFU 27 30 RFU RFU 28 29 VIO Notes: 1. RFU= Reserved for future use 2. NC for 128Mb Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 3 IS29GL256/128 Figure 1.2 56-pin Standard TSOP (Top View) (1), No BYTE#, (2) NC/A23 1 56 RFU A22 2 55 RFU A15 3 54 A16 A14 4 53 RFU A13 A12 5 52 VSS 6 51 DQ15/A-1 A11 7 50 DQ7 A10 8 49 DQ14 A9 9 48 DQ6 A8 10 47 DQ13 A19 11 46 DQ5 A20 12 45 DQ12 WE# 13 44 DQ4 RESET# 14 43 VCC A21 15 42 DQ11 WP#/ACC 16 41 DQ3 RY/BY# 17 40 DQ10 A18 18 39 DQ2 A17 19 38 DQ9 A7 20 37 DQ1 A6 21 36 DQ8 A5 22 35 DQ0 A4 23 34 OE# A3 24 33 VSS A2 25 32 CE# A1 26 31 A0 RFU 27 30 RFU RFU 28 29 VIO Notes: 1. RFU= Reserved for future use 2. NC for 128Mb Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 4 IS29GL256/128 Figure 2.1 64-ball Ball Grid Array (Top View, Balls Facing Down) (1) A B E F G H RFU A22 A23/ NC VIO VSS RFU RFU RFU 7 A13 A12 A14 A15 A16 BYTE# DQ15/ A-1 VSS 6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 5 WE# RESE T# A21 A19 DQ5 DQ12 VCC DQ4 4 RY/ BY# WP#/ ACC A18 A20 DQ2 DQ10 DQ11 DQ3 3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 2 A3 A4 A2 A1 A0 CE# OE# VSS 1 RFU RFU RFU RFU RFU VIO RFU RFU 8 C D (2) Notes: 1. RFU= Reserved for future use 2. NC for 128Mb Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 5 IS29GL256/128 Figure 2.2 64-ball Ball Grid Array (Top View, Balls Facing Down) (1), NO BYTE# A 8 B C D E F G H (2) NC A22 A23/ NC VIO VSS RFU RFU RFU 7 A13 A12 A14 A15 A16 RFU DQ15/ A-1 VSS 6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 5 WE# RESE T# A21 A19 DQ5 DQ12 VCC DQ4 4 RY/ BY# WP#/ ACC A18 A20 DQ2 DQ10 DQ11 DQ3 3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 2 A3 A4 A2 A1 A0 CE# OE# VSS 1 RFU RFU RFU RFU RFU VIO RFU RFU Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 6 IS29GL256/128 Figure 2-3. 56-ball Ball Grid Array (Top View, Balls Facing Down) (1), NO BYTE# A 8 B C D A15 A21 E F G A22 A16 RFU VSS H 7 A11 A12 A13 A14 RFU DQ15 DQ7 DQ14 6 A8 A19 A9 A10 DQ6 DQ13 DQ12 DQ5 5 WE# A23/ NC A20 DQ4 VIO RFU 4 WP#/ ACC RESE T# RY/ BY# DQ3 VCC DQ11 3 NC NC A18 A17 DQ1 DQ9 DQ10 DQ2 2 A7 A6 A5 A4 VSS OE# DQ0 DQ8 A3 A2 A1 A0 CE# RFU (2) 1 Notes: 1. RFU= Reserved for future use 2. NC for 128Mb Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 7 IS29GL256/128 TABLE 1. PIN DESCRIPTION Pin Name FIGURE 3. LOGIC DIAGRAM Function A23(A22)–A0 Address DQ0-DQ14 Data input/output. DQ15 / A-1 DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) CE# Chip Enable OE# Output Enable RESET# Hardware Reset Pin RY/BY# Ready/Busy Output WE# Write Enable Vcc Supply Voltage Vss Ground VIO Supply Voltage for Input/Output. BYTE#(1) Byte/Word mode selection WP#/ACC Write Protect / Acceleration Pin (WP# has an internal pull-up; when unconnected, WP# is at VIH.) NC No Connect RFU Reserved for future use. RFUs should not be connected. A23(A22)-A0 CE# OE# WE# Reset# WP#/ACC Byte# VIO DQ0 – DQ15 (A-1) RY/BY# Note: 1. No Byte# (x16 org. only) device is also available. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 8 IS29GL256/128 Table 2. PRODUCT SELECTOR GUIDE Product Number Maximum SPEED IS29GL256/128 70ns(1) at Vcc = 3.0V ~ 3.6V, VIO = 3.0V ~ 3.6V Extended (E) -40°C to +105°C Automotive (A3) 40°C to +125°C Temperature Note: 1. Maximum speed becomes 80ns when Vcc = 2.7V ~ 3.6V, VIO = 2.7V ~ 3.6V, and 90ns when Vcc = 2.7V ~ 3.6V, VIO = 1.65V~Vcc. BLOCK DIAGRAM RY/BY# Vcc Vss VIO DQ0-DQ15 (A-1) Block Protect Switches Erase Voltage Generator Input/Output Buffers State Control WE# Command Register Program Voltage Generator Chip Enable Output Enable Logic CE# OE# Vcc Detector Timer Address Latch STB STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A23 (A23 )- A0 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 9 IS29GL256/128 Product Overview IS29GL256/128 are 256/128 Mb, page mode Flash devices optimized for today’s embedded designs that demand a large storage array and rich functionality. This product offers uniform 64 Kword (128 KB) sectors and feature VI/O control, allowing control and I/O signals to operate from 1.65 V to VCC. Additional features include: • Single word programming or a 32-word buffer for an increased programming speed • Program Suspend/Resume and Erase Suspend/Resume • Advanced Sector Protection methods for protecting sectors as required • 512 words/1024 bytes of Secured Silicon Region for storing customer secured information. The Secured Silicon Region is One Time Programmable (OTP). Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 10 IS29GL256/128 Table 3. Sector / Persistent Protection Sector Group Address Tables Density SA0 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) 000000–00FFFF SA1 128/64 010000–01FFFF SA2 128/64 020000–02FFFF PPB 3 SA3 128/64 030000–03FFFF PPB 4 SA4 128/64 040000–04FFFF PPB 5 SA5 128/64 050000–05FFFF SA6 128/64 060000–06FFFF PPB 7 SA7 128/64 070000–07FFFF PPB 8 SA8 128/64 080000–08FFFF SA9 128/64 090000–09FFFF SA10 128/64 0A0000–0AFFFF PPB 11 SA11 128/64 0B0000–0BFFFF PPB 12 SA12 128/64 0C0000–0CFFFF SA13 128/64 0D0000–0DFFFF PPB Group A23(A22)-A18 PPB 0 PPB 1 PPB 2 PPB 6 PPB 9 PPB 10 PPB 13 PPB 14 128Mb 256Mb 000000 000001 000010 000011 Sector SA14 128/64 0E0000–0EFFFF PPB 15 SA15 128/64 0F0000–0FFFFF PPB 16 SA16 128/64 100000–10FFFF SA17 128/64 110000–11FFFF SA18 128/64 120000–12FFFF PPB 19 SA19 128/64 130000–13FFFF PPB 20 SA20 128/64 140000–14FFFF SA21 128/64 150000–15FFFF SA22 128/64 160000–16FFFF PPB 23 SA23 128/64 170000–17FFFF PPB 24 SA24 128/64 180000–18FFFF PPB 25 SA25 128/64 190000–19FFFF SA26 128/64 1A0000–1AFFFF PPB 27 SA27 128/64 1B0000–1BFFFF PPB 28 SA28 128/64 1C0000–1CFFFF SA29 128/64 1D0000–1DFFFF SA30 128/64 1E0000–1EFFFF PPB 31 SA31 128/64 1F0000–1FFFFF PPB 32 SA32 128/64 200000–20FFFF SA33 128/64 210000–21FFFF SA34 128/64 220000–22FFFF SA35 128/64 230000–23FFFF PPB 17 PPB 18 PPB 21 PPB 22 PPB 26 PPB 29 PPB 30 PPB 33 PPB 34 000100 000101 000110 000111 001000 PPB 35 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 11 IS29GL256/128 Density SA36 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) 240000–24FFFF SA37 128/64 250000–25FFFF SA38 128/64 260000–26FFFF PPB 39 SA39 128/64 270000–27FFFF PPB 40 SA40 128/64 280000–28FFFF SA41 128/64 290000–29FFFF SA42 128/64 2A0000–2AFFFF PPB 43 SA43 128/64 2B0000–2BFFFF PPB 44 SA44 128/64 2C0000–2CFFFF SA45 128/64 2D0000–2DFFFF PPB Group A23(22)-A18 PPB 36 PPB 37 PPB 38 PPB 41 PPB 42 PPB 45 PPB 46 001011 SA46 128/64 2E0000–2EFFFF SA47 128/64 2F0000–2FFFFF PPB 48 SA48 128/64 300000–30FFFF SA49 128/64 310000–31FFFF SA50 128/64 320000–32FFFF PPB 51 SA51 128/64 330000–33FFFF PPB 52 SA52 128/64 340000–34FFFF SA53 128/64 350000–35FFFF SA54 128/64 360000–36FFFF PPB 55 SA55 128/64 370000–37FFFF PPB 56 SA56 128/64 380000–38FFFF PPB 57 SA57 128/64 390000–39FFFF SA58 128/64 3A0000–3AFFFF PPB 59 SA59 128/64 3B0000–3BFFFF PPB 60 SA60 128/64 3C0000–3CFFFF SA61 128/64 3D0000–3DFFFF SA62 128/64 3E0000–3EFFFF PPB 63 SA63 128/64 3F0000–3FFFFF PPB 64 SA64 128/64 400000–40FFFF SA65 128/64 410000–41FFFF PPB 50 256Mb 001010 PPB 47 PPB 49 128Mb 001001 Sector PPB 53 PPB 54 PPB 58 PPB 61 PPB 62 PPB 65 PPB 66 001100 001101 001110 001111 010000 SA66 128/64 420000–42FFFF PPB 67 SA67 128/64 430000–43FFFF PPB 68 SA68 128/64 440000–44FFFF SA69 128/64 450000–45FFFF SA70 128/64 460000–46FFFF SA71 128/64 470000–47FFFF PPB 69 PPB 70 010001 PPB 71 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 12 IS29GL256/128 Density SA72 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) 480000–48FFFF SA73 128/64 490000–49FFFF SA74 128/64 4A0000–4AFFFF PPB 75 SA75 128/64 4B0000–4BFFFF PPB 76 SA76 128/64 4C0000–4CFFFF PPB 77 SA77 128/64 4D0000–4DFFFF SA78 128/64 4E0000–4EFFFF PPB 79 SA79 128/64 4F0000–4FFFFF PPB 80 SA80 128/64 500000–50FFFF SA81 128/64 510000–51FFFF SA82 128/64 520000–52FFFF PPB 83 SA83 128/64 530000–53FFFF PPB 84 SA84 128/64 540000–54FFFF SA85 128/64 550000–55FFFF PPB Group A23(22)-A18 PPB 72 PPB 73 PPB 74 PPB 78 PPB 81 PPB 82 PPB 85 PPB 86 128Mb 256Mb 010010 010011 010100 010101 Sector SA86 128/64 560000–56FFFF PPB 87 SA87 128/64 570000–57FFFF PPB 88 SA88 128/64 580000–58FFFF SA89 128/64 590000–59FFFF SA90 128/64 5A0000–5AFFFF PPB 91 SA91 128/64 5B0000–5BFFFF PPB 92 SA92 128/64 5C0000–5CFFFF SA93 128/64 5D0000–5DFFFF SA94 128/64 5E0000–5EFFFF PPB 95 SA95 128/64 5F0000–5FFFFF PPB 96 SA96 128/64 600000–60FFFF PPB 97 SA97 128/64 610000–61FFFF SA98 128/64 620000–62FFFF PPB 99 SA99 128/64 630000–63FFFF PPB 100 SA100 128/64 640000–64FFFF SA101 128/64 650000–65FFFF SA102 128/64 660000–66FFFF PPB 103 SA103 128/64 670000–67FFFF PPB 104 SA104 128/64 680000–68FFFF SA105 128/64 690000–69FFFF SA106 128/64 6A0000–6AFFFF SA107 128/64 6B0000–6BFFFF PPB 89 PPB 90 PPB 93 PPB 94 PPB 98 PPB 101 PPB 102 PPB 105 PPB 106 010110 010111 011000 011001 011010 PPB 107 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 13 IS29GL256/128 Density SA108 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) 6C0000–6CFFFF SA109 128/64 6D0000–6DFFFF SA110 128/64 6E0000–6EFFFF PPB 111 SA111 128/64 6F0000–6FFFFF PPB 112 SA112 128/64 700000–70FFFF PPB 113 SA113 128/64 710000–71FFFF SA114 128/64 720000–72FFFF PPB 115 SA115 128/64 730000–73FFFF PPB 116 SA116 128/64 740000–74FFFF SA117 128/64 750000–75FFFF SA118 128/64 760000–76FFFF PPB 119 SA119 128/64 770000–77FFFF PPB 120 SA120 128/64 780000–78FFFF SA121 128/64 790000–79FFFF PPB Group A23(22)-A18 PPB 108 PPB 109 PPB 110 PPB 114 PPB 117 128Mb PPB 118 PPB 121 PPB 122 256Mb 011011 011100 011101 011110 Sector SA122 128/64 7A0000–7AFFFF PPB 123 SA123 128/64 7B0000–7BFFFF PPB 124 SA124 128/64 7C0000–7CFFFF SA125 128/64 7D0000–7DFFFF SA126 128/64 7E0000–7EFFFF PPB 127 SA127 128/64 7F0000–7FFFFF PPB 128 SA128 128/64 800000–80FFFF SA129 128/64 810000–81FFFF SA130 128/64 820000–82FFFF PPB 131 SA131 128/64 830000–83FFFF PPB 132 SA132 128/64 840000–84FFFF PPB 133 SA133 128/64 850000–85FFFF SA134 128/64 860000–86FFFF PPB 135 SA135 128/64 870000–87FFFF PPB 136 SA136 128/64 880000–88FFFF SA137 128/64 890000–89FFFF SA138 128/64 8A0000–8AFFFF PPB 139 SA139 128/64 8B0000–8BFFFF PPB 140 SA140 128/64 8C0000–8CFFFF SA141 128/64 8D0000–8DFFFF SA142 128/64 8E0000–8EFFFF SA143 128/64 8F0000–8FFFFF PPB 125 PPB 126 PPB 129 PPB 130 PPB 134 PPB 137 PPB 138 PPB 141 PPB 142 011111 100000 100001 100010 100011 PPB 143 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 14 IS29GL256/128 Density SA144 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) 900000–90FFFF SA145 128/64 910000–91FFFF SA146 128/64 920000–92FFFF PPB 147 SA147 128/64 930000–93FFFF PPB 148 SA148 128/64 940000–94FFFF PPB 149 SA149 128/64 950000–95FFFF SA150 128/64 960000–96FFFF PPB 151 SA151 128/64 970000–97FFFF PPB 152 SA152 128/64 980000–98FFFF SA153 128/64 990000–99FFFF SA154 128/64 9A0000–9AFFFF PPB 155 SA155 128/64 9B0000–9BFFFF PPB 156 SA156 128/64 9C0000–9CFFFF SA157 128/64 9D0000–9DFFFF PPB Group A23-A18 PPB 144 PPB 145 PPB 146 PPB 150 PPB 153 PPB 154 PPB 157 PPB 158 256Mb 100100 100101 100110 100111 Sector SA158 128/64 9E0000–9EFFFF PPB 159 SA159 128/64 9F0000–9FFFFF PPB 160 SA160 128/64 A00000–A0FFFF SA161 128/64 A10000–A1FFFF SA162 128/64 A20000–A2FFFF PPB 163 SA163 128/64 A30000–A3FFFF PPB 164 SA164 128/64 A40000–A4FFFF SA165 128/64 A50000–A5FFFF SA166 128/64 A60000–A6FFFF PPB 167 SA167 128/64 A70000–A7FFFF PPB 168 SA168 128/64 A80000–A8FFFF PPB 169 SA169 128/64 A90000–A9FFFF SA170 128/64 AA0000–AAFFFF PPB 171 SA171 128/64 AB0000–ABFFFF PPB 172 SA172 128/64 AC0000–ACFFFF SA173 128/64 AD0000–ADFFFF SA174 128/64 AE0000–AEFFFF PPB 175 SA175 128/64 AF0000–AFFFFF PPB 176 SA176 128/64 B00000–B0FFFF SA177 128/64 B10000–B1FFFF SA178 128/64 B20000–B2FFFF SA179 128/64 B30000–B3FFFF PPB 161 PPB 162 PPB 165 PPB 166 PPB 170 PPB 173 PPB 174 PPB 177 PPB 178 101000 101001 101010 101011 101100 PPB 179 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 15 IS29GL256/128 Density SA180 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) B40000–B4FFFF SA181 128/64 B50000–B5FFFF SA182 128/64 B60000–B6FFFF PPB 183 SA183 128/64 B70000–B7FFFF PPB 184 SA184 128/64 B80000–B8FFFF PPB 185 SA185 128/64 B90000–B9FFFF SA186 128/64 BA0000–BAFFFF PPB 187 SA187 128/64 BB0000–BBFFFF PPB 188 SA188 128/64 BC0000–BCFFFF SA189 128/64 BD0000–BDFFFF SA190 128/64 BE0000–BEFFFF PPB 191 SA191 128/64 BF0000–BFFFFF PPB 192 SA192 128/64 C00000–C0FFFF SA193 128/64 C10000–C1FFFF PPB Group A23-A18 PPB 180 PPB 181 PPB 182 PPB 186 PPB 189 PPB 190 101101 101110 101111 PPB 193 PPB 194 256Mb 110000 Sector SA194 128/64 C20000–C2FFFF PPB 195 SA195 128/64 C30000–C3FFFF PPB 196 SA196 128/64 C40000–C4FFFF SA197 128/64 C50000–C5FFFF SA198 128/64 C60000–C6FFFF PPB 199 SA199 128/64 C70000–C7FFFF PPB 200 SA200 128/64 C80000–C8FFFF SA201 128/64 C90000–C9FFFF SA202 128/64 CA0000–CAFFFF PPB 203 SA203 128/64 CB0000–CBFFFF PPB 204 SA204 128/64 CC0000–CCFFFF PPB 205 SA205 128/64 CD0000–CDFFFF SA206 128/64 CE0000–CEFFFF PPB 207 SA207 128/64 CF0000–CFFFFF PPB 208 SA208 128/64 D00000–D0FFFF SA209 128/64 D10000–D1FFFF SA210 128/64 D20000–D2FFFF PPB 211 SA211 128/64 D30000–D3FFFF PPB 212 SA212 128/64 D40000–D4FFFF SA213 128/64 D50000–D5FFFF SA214 128/64 D60000–D6FFFF SA215 128/64 D70000–D7FFFF PPB 197 PPB 198 PPB 201 PPB 202 PPB 206 PPB 209 PPB 210 PPB 213 PPB 214 110001 110010 110011 110100 110101 PPB 215 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 16 IS29GL256/128 Density SA216 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) D80000–D8FFFF SA217 128/64 D90000–D9FFFF SA218 128/64 DA0000–DAFFFF PPB 219 SA219 128/64 DB0000–DBFFFF PPB 220 SA220 128/64 DC0000–DCFFFF PPB 221 SA221 128/64 DD0000–DDFFFF SA222 128/64 DE0000–DEFFFF PPB 223 SA223 128/64 DF0000–DFFFFF PPB 224 SA224 128/64 E00000–E0FFFF SA225 128/64 E10000–E1FFFF SA226 128/64 E20000–E2FFFF PPB 227 SA227 128/64 E30000–E3FFFF PPB 228 SA228 128/64 E40000–E4FFFF SA229 128/64 E50000–E5FFFF PPB Group A23-A18 PPB 216 PPB 217 PPB 218 PPB 222 PPB 225 PPB 226 PPB 229 PPB 230 256Mb 110110 110111 111000 111001 Sector SA230 128/64 E60000–E6FFFF PPB 231 SA231 128/64 E70000–E7FFFF PPB 232 SA232 128/64 E80000–E8FFFF SA233 128/64 E90000–E9FFFF SA234 128/64 EA0000–EAFFFF PPB 235 SA235 128/64 EB0000–EBFFFF PPB 236 SA236 128/64 EC0000–ECFFFF SA237 128/64 ED0000–EDFFFF SA238 128/64 EE0000–EEFFFF PPB 239 SA239 128/64 EF0000–EFFFFF PPB 240 SA240 128/64 F00000–F0FFFF PPB 241 SA241 128/64 F10000–F1FFFF SA242 128/64 F20000–F2FFFF PPB 243 SA243 128/64 F30000–F3FFFF PPB 244 SA244 128/64 F40000–F4FFFF SA245 128/64 F50000–F5FFFF SA246 128/64 F60000–F6FFFF SA247 128/64 F70000–F7FFFF PPB 233 PPB 234 PPB 237 PPB 238 PPB 242 PPB 245 PPB 246 111010 111011 111100 111101 PPB 247 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 17 IS29GL256/128 Densit y SA248 Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) F80000–F8FFFF SA249 128/64 F90000–F9FFFF SA250 128/64 FA0000–FAFFFF PPB 251 SA251 128/64 FB0000–FBFFFF PPB 252 SA252 128/64 FC0000–FCFFFF PPB 253 SA253 128/64 FD0000–FDFFFF SA254 128/64 FE0000–FEFFFF SA255 128/64 FF0000–FFFFFF PPB Group A23-A18 Sector PPB 248 PPB 249 111110 PPB 250 256Mb 111111 PPB 254 PPB 255 Table 4. Device OPERATING MODES 256/128Mb FLASH USER MODE TABLE DQ8-DQ15 CE# OE# WE# RESET# WP#/ ACC A23(22)A0 DQ0DQ7 Read L L H H L/H AIN DOUT DOUT Write L H L H (Note 2) AIN DIN DIN Accelerated Program L H L H VHH AIN DIN DIN CMOS Standby Vcc0.3V X X Vcc0.3V H X High-Z High-Z High-Z Output Disable L H H H L/H X High-Z High-Z High-Z Hardware Reset X X X L L/H X High-Z High-Z High-Z Operation BYTE# = VIH BYTE# = VIL DQ8DQ14 =High-Z, DQ15=A-1 Notes: 1. Addresses are A23 (A22)-A0 in word mode; A23 (A22)-A-1 in byte mode. 2. If WP# = VIL, only the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has a resistive pullup controlled by a latch, which is reset to the VIH state during Vcc power up; when unconnected, WP# will remain at VIH. Most sectors are unprotected when shipped from the factory. But the Factory Locked Secured Silicon Region is always factory locked when shipped from the factory. 3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm. Legend L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 18 IS29GL256/128 USER MODE DEFINITIONS Word / Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by CE#, OE#, and WE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by CE#, OE#, and WE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. VIO Control The VIO allows the host system to set the voltage levels that the device generates and tolerates on all inputs and outputs (address, control, and DQ signals). VIO range is 1.65 to VCC. For example, a VIO of 1.653.6 volts allows for I/O at the 1.65 or 3.6 volt levels, driving and receiving signals to and from other 1.65 or 3.6 V devices on the same data bus. Read All memories require access time to output array data. In a read operation, data is read from one memory location at a time. Addresses are presented to the device in random order, and the propagation delay through the device causes the data on its outputs to arrive with the address on its inputs. The device defaults to reading array data after device power-up or hardware reset. To read data from the memory array, the system must first assert a valid address on A23-A0, while driving OE# and CE# to VIL. WE# must remain at VIH. Data will appear on DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid output data. The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE) has elapsed from the falling edge of OE#, assuming the tACC access time has been meet. Page Read Mode The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The page size of the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A23A3. Address bits A2-A0 in word mode (A2 to A-1 in byte mode) determine the specific word within a page. The microprocessor supplies the specific word location. The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page” addresses. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 19 IS29GL256/128 Autoselect The Autoselect mode provides manufacturer ID, Device identification, and sector protection information, through identifier codes output from the internal register (separate from the memory array) on the DQ pins. The device only support to use Autoselect command to access Autoselect codes. It does not support the mode of applying VHH on address pin A9. • The Autoselect command sequence may be written to an address within a sector that is either in the read or erase-suspend-read mode. • The Autoselect command may not be written while the device is actively programming or erasing. • The system must write the reset command to return to the read mode (or erase-suspend-read mode if the sector was previously in Erase Suspend). • When verifying sector protection, the sector address must appear on the appropriate highest order address bits. The remaining address bits are don't care and then read the corresponding identifier code on DQ pins. Address Data(Hex) Word X00 9D Byte X00 9D Word X01/X0E/X0F 227E/2222/2201 Byte X02/X1C/X1E 7E/22/01 Word X01/X0E/X0F 227E/2221/2201 Byte X02/X1C/X1E 7E/21/01 Remark Manufacturer ID 256Mb Device ID 128Mb Program/Erase Operations These devices are capable of several modes of programming and or erase operations which are described in detail in the following sections. During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing address, command, and data. Addresses are latched on the falling edge of WE# or CE#, whichever is last, while data is latched on the rising edge of WE# or CE#, whichever is first. Note the following: • When the Embedded Program algorithm is complete, the device returns to the read mode. • The system can determine the status of the program operation by reading the DQ status bits. Refer to “Write Operation Status” for information on these status bits. • An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.” • Only erase operations can convert a “0” to a “1.” • Any commands written to the device during the Embedded Program/Erase are ignored except the Suspend commands. • Secured Silicon Region, Autoselect, and CFI functions are unavailable when a program operation is in progress. • A hardware reset and/or power removal immediately terminates the Program/Erase operation and the Program/Erase command sequence should be reinitiated once the device has returned to the read mode to ensure data integrity. • Programming is allowed in any sequence and across sector boundaries for single word programming operation. • Programming to the same word address multiple times without intervening erases is permitted. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 20 IS29GL256/128 Single Word Programming Single word programming mode is one method of programming the Flash. In this mode, four Flash command write cycles are used to program an individual Flash address. The data for this programming operation could be 8 or 16-bits wide. While the single word programming method is supported by most devices, in general Single Word Programming is not recommended for devices that support Write Buffer Programming. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by reading the DQ status bits. • During programming, any command (except the Suspend command) is ignored. • The Secured Silicon Region, Autoselect, and CFI functions are unavailable when a program operation is in progress. • A hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. • Programming to the same address multiple times continuously (for example, “walking” a bit within a word) is permitted. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 21 IS29GL256/128 Figure 4. Single Word Program Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 22 IS29GL256/128 Write Buffer Programming Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation. This results in a faster effective word programming time than the standard “word” programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming occurs. At this point, the system writes the number of “word locations minus 1” that are loaded into the write buffer at the Sector Address in which programming occurs. This tells the device how many write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash” confirm command. The number of locations to program cannot exceed the size of the write buffer or the operation aborts. (Number loaded = the number of locations to program minus 1. For example, if the system programs 6 address locations, then 05h should be written to the device.) The system then writes the starting address/data combination. This starting address is the first address/data pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must fall within the elected-write-buffer-page. The “write-buffer-page” is selected by using the addresses A23–A5. The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple “write-buffer-pages.” This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected “write-buffer-page”, the operation ABORTs.) After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the write buffer. Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is decremented for every data load operation. Also, the last data loaded at a location before the “Program Buffer to Flash” confirm command is the data programmed into the device. It is the software's responsibility to comprehend ramifications of loading a write-buffer location more than once. The counter decrements for each data load operation, NOT for each unique write-buffer-address location. Once the specified number of write buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at the Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation. The Write Operation Status bits should be used while monitoring the last address location loaded into the write buffer. This eliminates the need to store an address in memory because the system can load the last address location, issue the program confirm command at the last loaded address location, and then check the write operation status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer “embedded” programming operation can be suspended or resumed using the standard suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device returns to READ mode. The Write Buffer Programming Sequence is ABORTED under any of the following conditions: • Load a value that is greater than the page buffer size during the “Number of Locations to Program” step. • Write to an address in a sector different than the one specified during the Write-Buffer-Load command. • Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address” during the “write buffer data loading” stage of the operation. • Writing anything other than the Program to Buffer Flash Command after the specified number of “data load” cycles. The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. Note that the Secured Silicon Region, Autoselect, and CFI functions are unavailable when a program operation is in progress. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 23 IS29GL256/128 Write buffer programming is allowed in any sequence of write buffer page locations. These flash devices are capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Figure 5. Write Buffer Programming Operation Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 24 IS29GL256/128 Sector Erase Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, with the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. Once the sector erase operation has begun, only Suspend command (B0h) is valid. All other commands are ignored. If there are several sectors to be erased, Sector Erase Command sequences must be issued for each sector. That is, only one sector address can be specified for each Sector Erase command. Users must issue another Sector Erase command for the next sector to be erased after the previous one is completed. When the Embedded Erase algorithm is completed, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart on Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. Figure 6. Sector Erase Operation START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Yes Erase Done Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 25 IS29GL256/128 Chip Erase Command Sequence Chip erase is a six-bus cycle operation as indicated by Table 13. These commands invoke the Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory to an all zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain FFFFh, except for any protected sectors. The system is not required to provide any controls or timings during these operations. When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to “Write Operation Status” for information on these status bits. Any commands including suspend command written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that sector has returned to reading array data, to ensure the entire array is properly erased. Erase Suspend/Erase Resume Sequence The Suspend command (B0h) allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erase. The Suspend command is ignored if written during the chip erase operation. Addresses are don’t-cares when writing the Suspend command during sector erase operation. When the Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. After the sector erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. In the erase-suspend-read mode, the system can also issue Programing commands, the Autoselect command sequence, the Secured Silicon Region command, and CFI query command. Refer to Write Buffer Programming and the Autoselect for details. To resume the sector erase operation, the system must write the Resume command (30h). Further writes of the Resume command are ignored. Another Suspend command can be written after the chip has resumed sector erasing Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 26 IS29GL256/128 Program Suspend/Program Resume Sequence The Suspend command (B0h) also allows the system to interrupt an embedded programming operation or a “Write to Buffer” programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the programming operation within 15 µs maximum (5 µs typical) and updates the status bits. Addresses are “don't-cares” when writing the Suspend command. After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not within a sector in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Region, then user must use the proper command sequences to enter and exit this region. The system may also write the Autoselect Command Sequence and CFI query command when the device is in Program Suspend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the write operation status bits, just as in the standard program operation. The system must write the Resume command (30h) to exit the Program Suspend mode (address bits are “don't care”) and continue the programming operation. Further writes of the Resume command are ignored. Another Suspend command can be written after the device has resumed programming. Accelerated Program Accelerated single word programming and write buffer programming operations are enabled through the WP#/ACC pin. This method is faster than the standard program command sequences. If the system asserts VHH on this input, the device automatically enters the Accelerated Program mode and uses the higher voltage and current provided by WP#/ACC pin to reduce the time required for program operations. The system can then use the Write Buffer Load command sequence provided by the Accelerated Program mode. Note that if a “Write-to-Buffer-Abort Reset” is required while in Accelerated Program mode, the full 3-cycle RESET command sequence must be used to reset the device. Removing VHH from the ACC input, upon completion of the embedded program operation, returns the device to normal operation. • Sectors must be unlocked prior to raising WP#/ACC to VHH. • The WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. • It is recommended that WP#/ACC apply VHH after power-up sequence is completed. In addition, it is recommended that WP#/ACC apply from VHH to VIH/VIL before powering down VCC/ VIO. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 27 IS29GL256/128 Write Operation Status The device provides several bits to determine the status of a program or erase operation. The following subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling status on any word other than the last word to be programmed in the write-bufferpage returns false status information. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode, without changing any data. During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After a sector erase command sequence is written, if a sector selected for erasing are protected, Data# Polling on DQ7 is active for approximately 1µs (~256µs for chip erase when all sectors are protected), then the device returns to the read mode. For a chip erase command, if not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7D00 appears on successive read cycles. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 28 IS29GL256/128 Figure 7. Write Operation Status Flowchart DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address that is being programmed or erased causes DQ6 to toggle. When the operation is complete, DQ6 stops toggling. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 29 IS29GL256/128 After a sector erase command sequence is written, if a sector selected for erasing are protected, DQ6 toggles for approximately 1 µs, then the device returns to the read mode. For a chip erase command, if not all sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7. If a program address falls within a protected sector, DQ6 toggles for approximately 1μs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erasesuspend-program mode, and stops toggling once the Embedded Program Algorithm is complete. Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in state. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Reading Toggle Bits DQ6/DQ2 Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erases operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high. If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erases operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. Note When verifying the status of a write operation (embedded program/erase) of a memory sector, DQ6 and DQ2 toggle between high and low states in a series of consecutive and contiguous status read cycles. In order for this toggling behavior to be properly observed, the consecutive status bit reads must not be interleaved with read accesses to other memory sectors. If it is not possible to temporarily prevent reads to other memory sectors, then it is recommended to use the DQ7 status bit as the alternative method of determining the active or inactive status of the write operation. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 30 IS29GL256/128 DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device does not output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device ignores the bit that was incorrectly instructed to be programmed from a 0 to a 1, while any other bits that were correctly requested to be changed from 1 to 0 are programmed. Attempting to program a 0 to a 1 is masked during the programming operation. Under valid DQ5 conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a sector was previously in the erase-suspend-program mode). DQ3: Sector Erase Timeout State Indicator After writing a sector erase command sequence, the output on DQ3 can be checked to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) When sector erase starts, DQ3 switches from “0” to “1”. This device does not support multiple sector erase (continuous sector erase) command sequences so it is not very meaningful since it immediately shows as a “1” after the first 30h command. Future devices may support this feature. DQ1: Write to Buffer Abort DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a “1”. The system must issue the “Write to Buffer Abort Reset” command sequence to return the device to reading array data. Table 5. Write Operation Status DQ7 (note 2) DQ6 DQ5 (note 1) DQ3 DQ2 (note 2) DQ1 RY/BY# Embedded Program Algorithm DQ7# Toggle 0 N/A No Toggle 0 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle N/A 0 Status Standard Mode Program Suspend Mode Erase Suspend Mode Write to Buffer Program Suspend Read Erase Suspend Read Program Suspended Sector Non-Program Suspended Sector Erase Suspended Sector 1 No Toggle Non-Erase Suspended Sector Invalid (Not allowed) 1 Data 1 0 N/A Toggle N/A Data 1 1 Erase Suspend Program (Embedded Program) DQ7# Toggle 0 N/A N/A N/A 0 Busy(note 3) Abort(note 4) DQ7# DQ7# Toggle Toggle 0 0 N/A N/A N/A N/A 0 1 0 0 Notes 1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location. 4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 31 IS29GL256/128 Figure 8. Data Polling Flowchart Start Read DQ7, DQ5, and DQ1 at valid address (1) YES DQ7 = Data NO DQ1 = 1 (3) NO DQ5 = 1 (2) YES YES Read DQ7 at valid address YES DQ7 = Data NO Failure Success Notes: 1. Valid address is the address being programmed or an address within the block being erased. 2. Failure results: DQ5 = 1 indicates an operation error. 3. DQ1 = 1 indicates a WRITE TO BUFFER PROGRAM ABORT operation. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 32 IS29GL256/128 Writing Commands/Command Sequences During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, whichever is last, while data is latched on the 1st rising edge of WE# or CE#, whichever is first. An erase operation can erase one sector or the entire device. Table 3 indicates the address space that each sector occupies. The device address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits required to uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write operations. RY/BY# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. This feature allows the host system to detect when data is ready to be read by simply monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not OE#). Hardware Reset The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP (RESET# Pulse Width), the device immediately terminates any operation in progress, tri-states all outputs, resets the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device is ready to accept another command sequence. When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but not at VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the system to read the boot-up firmware from the Flash memory upon a system reset. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 33 IS29GL256/128 Software Reset Software reset is part of the command set that also returns the device to array read mode and must be used for the following conditions: 1. To exit from Autoselect or CFI mode back to read mode. It returns back to erase-suspend-read mode if the device was previously in Erase Suspend mode. 2. When DQ5 goes high during write status operation that indicates program or erase cycle was not successfully completed 3. Exit sector lock/unlock operation. 4. After any aborted operations The following are additional points to consider when using the reset command: • This command resets the device to read mode and address bits are ignored. • Reset commands are ignored during program and erase operations. • The reset command may be written between the cycles in a program command sequence before programming begins (prior to the third cycle). This resets the sector to which the system was writing to the read mode. • If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the reset command returns that sector to the erase-suspend-read mode. • The reset command may be written during an Autoselect command sequence. • If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command returns that sector to the erase-suspend-read mode. • If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer Abort Reset” command sequence to RESET the device to reading array data. The standard RESET command does not work during this condition. Advanced Sector Protection/Unprotection The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations, individually, in any or all sectors and can be implemented through software and/or hardware methods, which are independent of each other. This section describes the various methods of protecting data stored in the memory array. An overview of these methods is shown in Figure 9. Every main flash array sector has a non-volatile (PPB) and a volatile (DYB) protection bit associated with it. When either bit is 0, the sector is protected from program and erase operations. The PPB bits are protected from program and erase when the PPB Lock bit is 0. There are two methods for managing the state of the PPB Lock bit, Persistent Protection and Password Protection. The Persistent Protection method sets the PPB Lock to 1 during power up or reset so that the PPB bits are unprotected. There is a command to clear the PPB Lock bit to 0 to protect the PPB bits. There is no command in the Persistent Protection method to set the PPB Lock bit therefore the PPB Lock bit will remain at 0 until the next power-off or reset. The Persistent Protection method allows boot code the option of changing sector protection by programming or erasing the PPB, then protecting the PPB from further change for the remainder of normal system operation by clearing the PPB Lock bit. This is sometimes called Boot-code controlled sector protection. The Password method clears the PPB Lock bit to 0 during power up or reset to protect the PPB. A 64-bit password may be permanently programmed and hidden for the password method. A command can be used to provide a password for comparison with the hidden password. If the password matches the PPB Lock bit is set to 1 to unprotect the PPB. A command can be used to clear the PPB Lock bit to 0. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 34 IS29GL256/128 Figure 9. Advanced Sector Protection/Unprotection Lock Register Bits (OTP) Password Protection Mode (DQ2) Persistent Protection Mode (DQ1) 64-bit Password (OTP) Dynamic Protection Bit (DYB) Memory Array Persistent Protection Bit (PPB) DYB 0 Sector 0 PPB 0 DYB 1 Sector 1 DYB 2 Sector 2 DYB 3 Sector 3 PPB 1 1 PPB 2 2 PPB 3 DYB 252 Sector 252 PPB 252 DYB 253 Sector 253 PPB 253 DYB 254 Sector 254 PPB 254 DYB 255 Sector 255 PPB 255 5. 0 = Sector Protected 1 = Sector Unprotected 6. DYB bits are only effective for sectors that are not protected via PPB (PPB = 1). 7. Volatile Bits: defaults to unprotected after power up. PPB Lock Bit 1. 0 = PPBs Locked, 1 = PPBs Unlocked 2. Bit is volatile, and defaults to “1” on reset. 3. Programming to “0” locks all PPBs to their current state. 4. Once programmed to “0”, requires hardware reset to unlock 8. 0 = Sector Protected 1 = Sector Unprotected 9. PPBs programmed to 0 individually, but erased to 1 collectively. The selection of the PPB Lock management method is made by programming OTP bits in the Lock Register so as to permanently select the method used. The Lock Register also contains OTP bits, for protecting the Secured Silicon Region. The PPB bits are erased so that all main flash array sectors are unprotected when shipped from factory. The Factory Locked Secured Silicon Region is always factory locked when shipped from the factory. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 35 IS29GL256/128 Lock Register The Lock Register consists of 16 bits and each of these bits in the lock register are non-volatile OTP. The Factory Locked Secured Silicon Region Lock Bit is DQ0 and The Customer Locked Secured Silicon Region Lock Bit is DQ6. DQ0 is always ‘0’, and it means that the Factory Secured Silicon Region is always locked when shipped from the factory. If DQ6 is ‘0’, it means that the Customer Locked Secured Silicon Region is locked and if DQ6 is ‘1’, it means that it is unlocked. The Customer Locked Secure Silicon Region Lock Bit must be used with caution, as once locked, there is no procedure available for unlocking the protected portion of the Secure Silicon Region and none of the bits in the protected Secure Silicon Region memory space can be modified in any way. Once Customer Locked Secure Silicon Region area is locked, any further attempts to program in the area will fail. The Persistent Protection Mode Lock Bit is DQ1 and the Password Protection Mode Lock Bit is DQ2. If DQ1 is set to ‘0’, the device is used in the Persistent Protection Mode. If DQ2 is set to ‘0’, the device is used in the Password Protection Mode. When shipped from the factory, all devices default to the Persistent Protection method. Either DQ1 or DQ2 can be programmed by user. Once programming one of them another one will be permanently disabled and any change is not allowed. If both DQ1 and DQ2 are selected to be programmed at the same time, the operation will abort. PPB Protection OTP bit is DQ3 and DYB Lock Boot Bit is DQ4. DQ3 is programmed in the ISSI factory. When the device is programmed to disable all PPB erase command, DQ3 outputs a ‘0’ when the lock register bits are read. Similarly, if the device is programmed to enable all PPB erase command, DQ3 outputs a ‘1’ when the lock register bits are read. Likewise the DQ4 bit is also programmed in the ISSI Factory. DQ4 is the bit which indicates whether Volatile Sector Protection Bit (DYB) is protected or not after boot-up. When the device is programmed to set all Volatile Sector Protection Bit protected after power-up, DQ4 outputs a ‘0’ when the lock register bits are read. Similarly, when the device is programmed to set all Volatile Sector Protection Bit unprotected after power-up, DQ4 outputs a ‘1’. DQ5 and DQ15 ~ DQ7 are reserved and will be 1’s. Table 6. Lock Register Bit Default DQ15 ~ DQ7 Each Bit = 1 Description DQ6 1 Customer Locked Secured Silicon Region Lock Bit (0 = locked, 1 = unlocked) DQ5 1 Reserved DQ4 1 DQ3 1 DQ2 DQ1 1 1 DQ0 0 Reserved DYB Lock Boot Bit 0 = protected all DYB after boot-up 1 = unprotected all DYB after boot-up PPB One Time Programmable Bit 0 = All PPB Erase Command disabled 1 = All PPB Erase Command enabled Password Protection Mode Lock Bit Persistent Protection Mode Lock Bit Factory Locked Secured Silicon Region Lock Bit (0 = locked, always locked from factory) Notes: 1. If the password mode is chosen, the password must be programmed before setting the corresponding lock register bit. 2. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for Sector 0 are disabled, while reads from other sectors are allowed until exiting this mode. 3. After selecting a sector protection method, each sector can operate in any of the following three states: - Constantly locked: The selected sectors are protected and cannot be reprogrammed unless PPB lock bit is cleared via hardware reset, or power cycle. - Dynamically locked: The selected sectors are protected but can be unprotected via software commands. - Unlocked: The sectors are unprotected and can be erased and/or programmed. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 36 IS29GL256/128 Persistent Protection Bits The Persistent Protection Bits are unique for each sector and nonvolatile (refer to Figure 9 and Table 3. Sector / Persistent Protection Sector Group Address Tables). It has the same endurances as the Flash memory. Preprogramming and verification prior to erasure are handled by the device, and therefore do not require system monitoring. There is a command to clear the PPB Lock bit to 0 to protect the PPB. However, there is no command in the Persistent Protection method to set the PPB Lock bit to 1 therefore the PPB Lock bit will remain at 0 until the next power up or reset. Notes 1. Each PPB is individually programmed and all are erased in parallel. 2. While programming PPB and data polling on programming PPB address, array data cannot be read from any sectors. 3. Entry command disables reads and writes for all sectors. 4. Reads within that sector return the PPB status for that sector. 5. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out without programming or erasing the PPB. 6. There are no means for individually erasing a specific PPB and no specific sector address is required for this operation. 7. Exit command must be issued after the execution which resets the device to read mode and re-enables reads and writes for all sectors. 8. The programming state of the PPB for given sectors can be verified by writing a PPB Status Read Command to the device as described by the flow chart shown in Figure 10.1. User only can use DQ6 and RY/BY# pin to detect programming status. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 37 IS29GL256/128 Figure 10.1 PPB Program/Erase Algorithm Enter PPB Command Set Program/Erase PPB Addr = SA (Program) Addr = Any (Erase) Read DQ7~DQ0 Twice Addr = SA (Program) Addr = Any (Erase) NO DQ6 = Toggle ? YES DQ5 = 1? NO YES Read DQ7~DQ0 Twice Addr = SA (Program) Addr = Any (Erase) NO Read DQ7~DQ0 Twice Addr = SA (Program) Addr = Any (Erase) DQ6 = Toggle ? YES DQ0 =0:Program DQ0 =1:Erase NO Fail YES Issue Reset Command Pass Exit PPB Command Set Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 38 IS29GL256/128 Dynamic Protection Bits Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only control the protection scheme for unprotected sectors that have their PPBs erased to “1”. By issuing the DYB Set or Clear command sequences, the DYBs are set to “0” or cleared to “1”, thus placing each sector in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. Notes 1. The DYBs can be set to “0” or cleared to “1” as often as needed. When the parts are first shipped from the factory, the all DYBs are set to “1”. Upon power up or reset, the all DYBs can be set to “0” or cleared to “1”, depending on the setting of DQ4 bit (DYB LOCK Boot Bit) in Lock Register (Table 6). 2. If all DYBs are cleared to “1” after power up, then the sectors may be modified if PPB of that sector is also cleared to “1” (see Table 7). 3. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic state. 4. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotected state of the sectors respectively. However, if there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be cleared by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again locks the PPBs, and the device operates normally again. 5. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early in the boot code and protect the boot code by holding WP#/ACC = VIL. Note that the PPB and DYB bits have the same function when WP#/ACC = VHH as they do when WP#/ACC =VIH. Figure 10.2. DYB Set-Read, Clear-Read Sequence Example Enter DYB Command Set Enter DYB Command Set Enter DYB Command Set Enter DYB Command Set DYB Set Addr = SA DYB Status Read Addr = SA DYB Clear Addr = SA DYB Status Read Addr = SA Exit DYB Command Set Exit DYB Command Set Exit DYB Command Set Exit DYB Command Set Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 39 IS29GL256/128 PPB Lock Bit The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”), it locks all PPBs and when cleared (erased to “1”), allows the PPBs to be changed. There is only one PPB Lock Bit per device. Notes 1. No software command sequence unlocks this bit, but only a hardware reset or a power-up clears this bit. 2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired settings. Password Protection Mode The Password Protection Mode allows an even higher level of security than the Persistent Sector Protection Mode by requiring a 64-bit password for unlocking the device PPB Lock Bit. In addition to this password requirement, after power up and reset, the PPB Lock Bit is set “0” to maintain the password mode of operation. Successful execution of the Password Unlock command by entering the entire password clears the PPB Lock Bit, allowing for sector PPBs modifications. Notes 1. The Password Program Command is only capable of programming 0’s. 2. The password is all 1’s when shipped from factory. It is located in its own memory space and is accessible through the use of the Password Program and Password Read commands. 3. All 64-bit password combinations are valid as a password. 4. Once the Password is programmed and verified, the Password Mode Locking Bit must be set in order to prevent reading or modification of the password. 5. The Password Mode Lock Bit, once programmed, prevents reading the 64-bit password on the data bus and further password programming. All further program and read commands to the password region are disabled (data is read as 1's) and these commands are ignored. There is no means to verify what the password is after the Password Protection Mode Lock Bit is programmed. Password verification is only allowed before selecting the Password Protection mode. 6. The Password Mode Lock Bit is not erasable. 7. The exact password must be entered in order for the unlocking function to occur. 8. The addresses can be loaded in any order but all 4 words are required for a successful match to occur. 9. The Sector Addresses and Word Line Addresses are compared while the password address/data are loaded. If the Sector Address don't match than the error will be reported at the end of that write cycle. It is a failure to change the state of the PPB Lock bit because it is still protected by the lack of a valid password. The data polling status will remain active, with DQ7 set to the complement of the DQ7 bit in the last word of the password unlock command, and DQ6 toggling. RY/BY# will remain low. 10. The device requires approximately 2 μs for setting the PPB Lock after the valid 64-bit password is given to the device. 11. The Password Unlock command cannot be accepted any faster than once every 2 μs ± 0.4 μs. This helps prevent a hacker from trying all possible 64-bit combinations in an attempt to correctly match a password. The embedded algorithm status checking methods may be used to determine when the device is ready to accept a new password command. 12. If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the PPB Lock. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 40 IS29GL256/128 Figure 11. Lock Register Program Algorithm Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 41 IS29GL256/128 Table 7. Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations Table 7 contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The PPB Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also Figure 9 for an overview of the Advanced Sector Protection feature. Hardware Data Protection Methods The device offers two main types of data protection at the sector level via hardware control: • When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific). There are additional methods by which intended or accidental erasure of any sectors can be prevented via hardware means. The following subsections describes these methods: WP#/ACC Method The Write Protect feature provides a hardware method of protecting one outermost sector. This function is provided by the WP#/ACC pin and overrides the previously discussed Sector Protection/Unprotection method. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the highest or lowest sector independently of whether the sector was protected or unprotected using the method described in Advanced Sector Protection/Unprotection on page 24. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected. The WP#/ACC pin must be held stable during a command sequence execution. WP# has a resistive pullup controlled by a latch, which is reset to the VIH state during Vcc power up; when unconnected, WP# will remain at VIH. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 42 IS29GL256/128 Low VCC Write Inhibit When VCC is less than VLKO (Lock-Out Voltage), the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch Protection” Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Power-Up Write Inhibit If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Power Conservation Modes Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC ± 0.3 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current specification Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Hardware RESET# Input Operation The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence to ensure data integrity. When RESET# is held at VSS ± 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at VIL but not within VSS ± 0.3 V, the standby current is greater. RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Output Disable (OE#) When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. (With the exception of RY/BY#.) Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 43 IS29GL256/128 Secured Silicon Region The Secured Silicon Region provides an extra Flash memory OTP area that can be programmed only once and permanently protected from further changes. The Secured Silicon Region is 1024 bytes in length and consists of 512-byte for Factory Locked Secured Silicon Region, 512-byte for Customer Locked Secured Silicon Region. Table 8. Secured Silicon Region Assignment Word Address Range Content Size 0000000h ~ 00000FFh Factory Locked Secured Silicon Region 512 bytes 0000100h ~ 00001FFh Customer Locked Secured Silicon Region 512 bytes The Secured Silicon Region Indicator Bits DQ15-DQ0 at Autoselect address 03h is used to indicate whether the Secured Silicon Region is factory locked and customer locked/unlock as well as the lowest or highest address sector WP# protected as the following. Secured Silicon Region Indicator Bits Secured Silicon Region Indicator Bits DQ15 ~ DQ8 Data (b = binary) Description Reserved Each bit = 1 DQ7 Factory Locked Secured Silicon Region 1 = Locked (always 1) DQ6 Customer Locked Secured Silicon Region 0 = Unlocked 1 = Locked DQ5 Reserved 1b DQ4 WP# Protects 0 = Lowest Address Sector 1 = Highest Address Sector Reserved 1111b DQ3 ~ DQ0 Please note the following general conditions: • On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space. • Reads outside of sector SA0 return invalid data. Reads locations above 1-Kbyte address of the sector SA0 return invalid data. • Sector SA0 during the Secured Silicon Sector Entry Command is remapped from memory array to Secured Silicon Sector array. • Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command must be issued to exit Secured Silicon Sector Mode. • The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or Embedded Erase algorithm. • Regardless that the sector SA0 is suspended, if system enters Secured Silicon Sector mode, the Secured Silicon Sector Region can be read. • The ACC function is not available when the Secured Silicon Sector is enabled. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 44 IS29GL256/128 Factory Locked Secured Silicon Region The Factory Locked Secured Silicon Region is always programmed and locked in the ISSI factory. Factory Locked Secured Silicon Region Indicator Bit DQ7 is always “1” and Factory Locked Secured Silicon Region Lock Bit DQ0 of the Lock Register is always “0” from the factory. Customer Locked Secured Silicon Region The Customer Locked Secured Silicon Region is always unprotected when shipped from the factory (Customer Locked Secured Silicon Region Indicator Bit DQ6 set to “0”), allowing customers to utilize that sector in any manner they choose. Please note the following: • The Secured Silicon Region can be read any number of times, but can be programmed and locked only once. The Customer Locked Secured Silicon Region must be locked with caution, as once locked, there is no procedure available for unlocking the Customer Locked Secured Silicon Region and none of the bits in the Customer Locked Secured Silicon Sector memory space can be modified in any way. • The accelerated programming (ACC) is not available when the Secured Silicon Region is enabled. • Once the Secured Silicon Region is locked and verified, the system must write the Exit Secured Silicon Region command sequence which return the device to the memory array at sector 0. Secured Silicon Region Entry/Exit Command Sequences The system can access the Secured Silicon Region by issuing the three-cycle Enter Secured Silicon Region command sequence. The device continues to access the Secured Silicon Region until the system issues the four-cycle Exit Secured Silicon Region command sequence. The Secured Silicon Region Entry Command allows the following commands to be executed • Read Customer Locked Secured Silicon Region and Factory Locked Secured Silicon Region • Program the Customer Locked Secured Silicon Region After the system has written the Enter Secured Silicon Region command sequence, it may read the Secured Silicon Region by using the addresses normally occupied by sector SA0 within the memory array. This mode of operation continues until the system issues the Exit Secured Silicon Region command sequence, or until power is removed from the device. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 45 IS29GL256/128 COMMON FLASH INTERFACE (CFI) The common flash interface (CFI) specification outlines device and host systems software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 9~12.In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the Autoselect mode. The device enters the CFI query mode and the system can read CFI data at the addresses given in Tables 9~12. The system must write the reset command to return the device to the Autoselect mode. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 46 Table 9. CFI Query Identification String Addresses (Word Mode) 10h 11h 12h Data 0051h 0052h 0059h 13h 14h 0002h 0000h Primary OEM Command Set 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command set (00h = none exists) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Description Query Unique ASCII string “QRY” Table 10. System Interface String Addresses (Word Mode) Data 1Bh 0027h Vcc Min (write/erase) DQ7-DQ4: volt, DQ3-DQ0: 100mV 1Ch 0036h Vcc Max (write/erase) DQ7-DQ4: volt, DQ3-DQ0: 100mV 1Dh 0000h Vpp Min voltage (00h = no Vpp pin present) 1Eh 0000h Vpp Max voltage (00h = no Vpp pin present) 1Fh 0003h Typical timeout per single byte/word write 2N µs 20h 0008h Typical timeout for min size buffer write 2N µs (00h = not supported) 21h 0008h Typical timeout per individual block erase 2N ms 22h 0010h(256Mb) 000Fh(128Mb) 23h 0005h Max timeout for byte/word write 2N times typical 24h 0002h Max timeout for buffer write 2N times typical 25h 0004h Max timeout per individual block erase 2N times typical 26h 0003h Max timeout for full chip erase 2N times typical (00h = not supported) Description Typical timeout for full chip erase 2N ms (00h = not supported) Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 47 Table 11. Device Geometry Definition Addresses (Word mode) Data Description 27h 0019h 0018h Device Size = 2N bytes. 0019h for 256Mb, 0018h for 128Mb 28h 29h 0002h 0000h Flash Device Interface Description (refer to CFI publication 100); 01h = X16 only; 02h = x8/x16 2Ah 2Bh 0006h 0000h Max number of byte in multi-byte write = 2N (00h = not supported) 2Ch 0001h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch 00XXh 0000h 0000h 0002h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h Erase Block Region 1 Information (refer to the CFI specification of CFI publication 100) 00FFh, 000h, 000h, 0002h = 256Mb 007Fh, 000h, 000h, 0002h = 128Mb Erase Block Region 2 Information (refer to the CFI specification of CFI publication 100) Erase Block Region 3 Information (refer to the CFI specification of CFI publication 100) Erase Block Region 4 Information (refer to the CFI specification of CFI publication 100) Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 48 Table 12. Primary Vendor-specific Extended Query Addresses (Word Mode) Data 40h 41h 42h 0050h 0052h 0049h Query Unique ASCII string "PRI" 43h 0031h Major version number, ASCII 44h 0034h 45h 0010h 46h 0002h Minor version number, ASCII Address Sensitive Unlock (Bits 1-0) 00 = Required, 01 = Not Required Process Technology (Bits 5-2) 0001 = 0.18um, 0010 = 0.13um, 0011 = 90nm, 0100 = 65nm Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 0001h Sector Protect 0 = Not Supported, X = Minimum number of sectors per group 48h 0000h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0004h Sector Protect/Unprotect Scheme 00h = High Voltage Sector Protection 01h = High Voltage + In-System Sector Protection 02h = HV + In-System + Software Command Sector Protection 03h = Software Command Sector Protection 04h = Advanced Sector Protection Method 4Ah 0000h Simultaneous Operation 00 = Not Supported, X = Number of Sectors 4Bh 0000h 4Ch 0002h 4Dh 0085h 4Eh 0095h 4Fh 00xxh 50h 0001h 51h 0000h 52h 0009h 53h 000Fh 54h 0009h 55h 0005h 56h 0005h 57h 0000h Description Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 03 = 16 Word Page Minimum WP#/ACC (Acceleration) Supply Voltage 00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV Maximum WP#/ACC (Acceleration) Supply Voltage 00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV Top/Bottom Boot Sector Flag 04 = Uniform sectors bottom WP# protect 05 = Uniform sectors top WP# protect Program Suspend 00 = Not Supported, 01 = Supported Unlock Bypass 00 = Not Supported, 01 = Supported Secured Silicon Region (Customer OTP Area) Size 2N bytes Hardware Reset Low Time-out during an embedded algorithm to read mode Maximum 2N ns Hardware Reset Low Time-out not during an embedded algorithm to read mode Maximum 2N ns Erase Suspend Latency Maximum 2N µs Program Suspend Latency Maximum 2N µs Bank Organization 00 = Data at 4Ah is zero, X = Number of Banks Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 49 Cycles Table 13. IS29GL256/128 Command Definitions Command Sequence Bus Cycles 1st Cycle Addr Data Read 1 RA RD Reset 1 XXX F0 Word Manufacturer ID 555 4 Autoselect Byte 256Mb Device ID 128Mb Sector Protect Verify(1) Word Byte Word Byte Word Program Buffer to Flash Write to Buffer Abort Reset Word Byte Word Byte Word Byte Word Chip Erase Sector Erase Erase/Program Suspend Erase/Program Resume AAA 555 Byte Word Byte Word Byte Word Byte AA AA AAA 6 1 3 6 6 2AA 555 X00 9D X00 9D X01 227E X0E X02 7E X01 227E X02 7E 90 (SA) X02 (SA) X04 00 01 00 01 A0 PA PD 25 SA WC 55 2AA 555 2AA AAA 555 AAA SA 555 AAA 555 AAA 555 AAA 55 AA AAA 555 2AA 555 2AA 555 90 90 555 55 555 AA 555 AAA 2AA AA 555 55 AAA 55 55 555 AAA SA AA AA AA 1 XXX B0 1 XXX 30 2AA 555 2AA 555 2AA 555 55 55 55 555 AAA 555 AAA 555 AAA 80 80 3 555 AAA AA 2AA 555 55 555 AAA 88 Secured Silicon Region Exit Word Byte 4 555 AAA AA 2AA 555 55 555 AAA 90 PA PD Byte Accelerated Program 1 2 55 AA XX 2222 X0F X1C 22 X1E 01 X0E 2221 X0F 2201 X1C 21 X1E 01 PA PD WBL PD 555 AAA 555 AAA XX AA AA 2AA 555 2AA 555 55 55 555 AAA SA 00 98 A0 Legend X = Don’t care RA = Address of the memory to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in Autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector. WBL = Write Buffer Location. The address must be within the same write buffer page as PA. WC = Word Count is the number of write buffer locations to load minus 1 and maximum value is 31 for word and byte mode. Note: 1. 2201 F0 Word Byte Word 6th Cycle Addr Data 29 Secured Silicon Region Entry CFI Query 5th Cycle Addr Data 90 AAA 555 AAA 4 4th Cycle Addr Data 555 555 Byte Byte Write to Buffer 555 4 Word Program 4 3rd Cycle Addr Data AA AAA 4 2nd Cycle Addr Data The data is 00h for an unprotected sector and 01h for a protected sector. This is same as PPB Status Read except that the protect and unprotect statuses are inverted here. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 50 10 30 Cycles Table 14. IS29GL256/128 Command Definitions Password Protection Lock Register Command Sequence Global Non-Volatile Global Volatile Freeze 1st/7th Cycle Addr Data 2nd Cycle Addr Data 3rd Cycle Addr Data Word 3 555 AA 2AA 55 555 40 Byte 3 AAA AA 55 55 AAA 40 Program 2 XXX A0 XXX Data Read 1 00 RD Command Set Exit 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 60 Byte 55 55 AAA 60 Command Set Entry Command Set Entry 4th Cycle Addr Data 3 AAA AA Password Program(1) 2 XXX A0 Password Read(2) 4 00 PWD0 01 PWD1 02 PWD2 03 PWD3 Password Unlock (2) 00 25 00 03 00 PWD0 01 PWD1 7 00 29 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 C0 Byte 3 AAA AA 55 55 AAA C0 Command Set Exit PPB Command Set Entry PPB Program (3) 2 XXX All PPB Erase 2 PPB Status Read 1 PPB Command Set Exit PPB Lock Command Set Entry (3) SA XXX 80 00 30 SA RD 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 50 Byte 3 AAA AA 555 55 AAA 50 PPB Lock Set 2 XXX A0 XXX 00 PPB Lock Status Read 1 XXX RD PPB Lock Command Set Exit 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 E0 Byte 3 AAA AA 555 55 AAA E0 DYB Set 2 XXX A0 SA 00 DYB Clear 2 XXX A0 SA 01 1 SA RD 2 XXX 90 XXX 00 DYB Status Read (4) DYB Command Set Exit 5th Cycle Addr Data 6th Cycle Addr Data PWAx PWDx A0 DYB Command Set Entry Volatile Bus Cycles 02 PWD2 03 00 Legend X = Don’t care RD(0) = Read data. SA = Sector Address. Address bits Amax–A16 uniquely select any sector. PWD = Password PWDx = Password word0, word1, word2, and word3. Data = Lock Register Contents: PD(0) = Secured Silicon Region Lock Bit, PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection Mode Lock Bit. Notes: Protected State = “00h”, Unprotected State = “01h.” 1. For PWDx, only one portion of the password can be programmed per each 2. Note that the password portion can be entered or read in any order as long as the entire 64-bit password is entered or read. 3. SA = Sector Address. Address bits Amax–A16 uniquely select any sector, and A-1=0 in x8 mode. 4. DYB Status Read also includes WP#/ACC=L effect. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 51 PWD3 Table 15. DC Characteristics (Under recommended operating ranges) Symbol Parameter Test Conditions Min Typ(4) Max Unit ILI Input Leakage Current 0V VIN  Vcc ±1 µA ILO Output Leakage Current 0V VOUT  Vcc ±1 µA ICC1(2) VCC Active Read Current 5MHz 15 30 mA 10MHz 25 45 mA VIO Non-Active Output CE# = VIL, OE# = VIH, VCC = VCCmax 0.2 10 mA VCC Intra-Page Read Current CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz CE# = VIL, OE# = VIH, VCC = VCCmax, f = 33 MHz 1 10 5 15 ICC3(2),(3) VCC Active Erase/ Program Current CE# = VIL, OE# = VIH, VCC = VCCmax 20 40 mA ICC4(1),(2) VCC Standby Current CE#, RESET# = VCC ± 0.3 V, OE# = VIH, VCC = VCC max VIL = Vss + 0.3 V/-0.1V, 70 150 µA VCC Reset Current RESET# = Vss ± 0.3V, VCC = VCCmax 70 150 µA Automatic Sleep Mode VIH = VCC ± 0.3 V, VIL = Vss ± 0.3V 70 150 µA ACC Accelerated Program Current CE# = VIL, OE# = VIH, VCC = VCCmax, WP#/ACC = VHH 3 10 15 30 IIO2 ICC2(2) ICC5(2) ICC6(1),(2) IACC CE# = VIL; OE# = VIH, VCC = VCCmax mA WP#/ACC pin VCC pin mA VIL Input Low Voltage -0.5 VIH Input High Voltage 0.7 x VIO 0.3 x VIO VIO + 0.3 VHH Acceleration Program Voltage 8.5 9.5 V VOL Output Low Voltage 0.15 x VIO V VOH VLKO(3) Output High Voltage CMOS Supply voltage (Erase and Program lock-out) IOL = 100μA IOH = -100μA 0.85 x VIO 2.2 V V V 2.5 V Notes: 1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS supply voltages. 2. Maximum ICC specifications are tested with Vcc = VCCmax and VIO = VCCmax. 3. Not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (Typ), VIO = VIO (Typ), and TA=25°C. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 52 Figure 12. Test Conditions Device Under Test CL Table 16. Test Specifications Test Conditions - Unit 30 pF Input Rise and Fall times 5 ns Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 0.0-VIO V 0.5VIO V 0.5VIO V Output Load Capacitance, CL B B Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 53 AC CHARACTERISTICS Table 17. Read-only Operations Characteristics (Under recommended operating ranges) Parameter Symbols Description JEDEC Standard Speed Test Setup Unit 70ns 80ns 90ns Min 70 80 90 ns tAVAV tRC Read Cycle Time tAVQV tACC Address to Output Delay CE# = VIL OE#= VIL Max 70 80 90 ns tELQV tCE Chip Enable To Output Delay OE#= VIL Max 70 80 90 ns tPACC Page Access Time Max 20 20 25 ns Max 25 25 30 ns tOE Output Enable to Output Delay Read tGLQV Toggle and DATA# Polling Max 35 35 35 ns tEHQZ(1) tDF Chip Enable to Output High Z Max 15 15 15 ns tGHQZ(1) tDF Output Enable to Output High Z Max 15 15 15 ns tAXQX tOH Output Hold Time from Addresses, CE# or OE#, whichever occurs first Min 0 0 0 ns tVCS Vcc Setup Time Min 50 50 50 µs Output Enable Hold Time Read Min 0 0 0 ns tOEH Toggle and DATA# Polling Min 0 0 0 ns Note: 1. High Z is Not 100% tested. 2. tOE parameter will meet specification value when the interval between CE# LOW and OE# LOW or Valid address to OE# LOW is equal to or longer than (tCE – tOE) or (tACC – tOE). Figure 13.1 READ to READ Operation Timing Diagram (WE#=HIGH, CE# Toggle) Address CE# tDF tOH tCE OE# DQ DOUT DOUT Note: 1. Please click here to refer to Application Note (AN25D012, Understanding and Interpreting Read Timing of Parallel NOR FLASH). Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 54 Figure 13.2. READ to READ Operatio Timing Diagram (OE# Toggle) tRC Address tDF tACC tOH CE# WE# tOEH OE# tDF tOH tOE DQ HIGH Z DOUT DOUT Figure 14. Page Read Operation Timings A23 Note: Addresses are A2:A-1 for byte mode. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 55 AC CHARACTERISTICS Table 18. Hardware Reset (RESET#) (Under recommended operating ranges) Parameter Std Description Speed Test Setup 70/80/90ns Unit tRP1 RESET# Pulse Width (During Embedded Algorithms) Min 200 ns tRP2 RESET# Pulse Width (NOT During Embedded Algorithms) Min 200 ns tRH Reset# High Time Before Read Min 50 ns tRB1 RY/BY# Recovery Time ( to CE#, OE# go low) Min 0 ns tRB2 RY/BY# Recovery Time ( to WE# go low) Min 50 ns Max 20 us Max 500 ns tREADY1 tREADY2 Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write Figure 15. AC Waveforms for RESET# Reset# Timings tRB1 CE#, OE# WE# tREADY1 tRB2 RY/BY# RESET# tRP1 Reset Timing during Embedded Algorithms CE#, OE# tRH RY/BY# RESET# tRP2 tREADY2 Reset Timing NOT during Embedded Algorithms Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 56 AC CHARACTERISTICS Table 19. Word / Byte Configuration (BYTE#) (Under recommended operating ranges) Speed Std Parameter Description Test Setup 70/80/90ns tBCS Byte# to CE# switching setup time Min 0 ns tCBH CE# to Byte# switching hold time Min 0 ns tRBH RY/BY# to Byte# switching hold time Min 0 ns Unit Figure 16. AC Waveforms for BYTE# CE# OE# Byte# tCBH tBCS Byte# timings for Read Operations CE# WE# Byte# tBCS tRB H RY/BY# Byte #timings for Write Operations Note: Switching BYTE# pin not allowed during embedded operations Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 57 AC CHARACTERISTICS Table 20. Write (Erase/Program) Operations (Under recommended operating ranges) Parameter Symbols Description Standar JEDEC d Speed(1) Unit 70ns 80ns 90ns tAVAV tWC Write Cycle Time Min 70 80 90 ns tAVWL tAS Address Setup Time Min 0 0 0 ns tWLAX tAH Address Hold Time Min 45 45 45 ns tDVWH tDS Data Setup Time Min 30 30 30 ns tWHDX tDH Data Hold Time Min 0 0 0 ns Read Output Enable Toggle and Hold Time DATA# Polling Read Recovery Time before Write (OE# High to WE# Low) MIn 0 0 0 ns Min 10 10 10 ns Min 0 0 0 ns tOEH tGHWL tGHWL tELWL tCS CE# SetupTime Min 0 0 0 ns tWHEH tCH CE# Hold Time Min 0 0 0 ns tWLWH tWP Write Pulse Width Min 25 25 25 ns tWHDL tWPH Write Pulse Width High Min 20 20 20 ns Write Buffer Program Operation (2, 3) Typ 160 160 160 µs Typ(4) 8 8 8 µs Max 200 200 200 µs Typ(4) 0.2 0.2 0.2 s Max 2 2 2 s 30 30 30 60 60 60 tWHWH1 tWHWH1 Programming Operation (Word and Byte Mode) Sector Erase Operation tWHWH2 tWHWH2 Chip Erase Operation 128Mb Typ(4) 256Mb s tVHH VHH Rise and Fall Time Min 250 250 250 ns tVCS Vcc Setup Time Min 50 50 50 µs WE# High to RY/BY# Low Max 70 70 70 ns Recovery Time from RY/BY# Min 0 0 0 ns t BUSY B tRB Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~32 words program. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (Typ), VIO = VIO (Typ), and TA=25°C. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 58 AC CHARACTERISTICS Table 21. Write (Erase/Program) Operations (Under recommended operating ranges) Alternate CE# Controlled Writes Parameter Symbols JEDEC Standard Speed(1) Description Unit 70ns 80ns 90ns tAVAV tWC Write Cycle Time Min 70 80 90 ns tAVEL tAS Address Setup Time Min 0 0 0 ns Address Setup Time to OE# Low during toggle bit polling Min 0 0 0 ns tAH Address Hold Time Min 45 45 45 ns tAHT Address Hold Time from CE# or OE# High during toggle bit polling Min 0 0 0 ns tDVEH tDS Data Setup Time Min 30 30 30 ns tEHDX tDH Data Hold Time Min 0 0 0 ns CE# High during toggle bit polling OE# High during toggle bit polling Read Recovery Time before Write (OE# High to CE# Low) Min 10 10 10 ns Min 10 10 10 ns Min 0 0 0 ns tASO tELAX TCEPH tOEPH tGHEL tGHEL tWLEL tWS WE# SetupTime Min 0 0 0 ns tEHWH tWH WE# Hold Time Min 0 0 0 ns tELEH tCP Write Pulse Width Min 35 35 35 ns tEHEL tCPH Write Pulse Width High Min 20 20 20 ns Typ(4) 160 160 160 µs Typ(4) 8 8 8 µs Max 200 200 200 µs Typ(4) 0.2 0.2 0.2 s Max 2 2 2 s Write Buffer Program Operation (2, 3) tWHWH1 tWHWH2 tWHWH1 tWHWH2 Programming Operation (Word and Byte mode) Sector Erase Operation Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~32 words bytes programmed. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (Typ), VIO = VIO (Typ), and TA=25°C. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 59 AC CHARACTERISTICS Figure 17. AC Waveforms for Chip/Sector Erase Operations Timings Erase Command Sequence (last 2 cycles) tAS tWC Addresses es 0x2AA Read Status Data (last two cycles) tAH SA VA VA 0x555 for chip erase CE# tGHWL tCH OE# tWP WE# tWPH tCS Data 0x55 tDS tWHWH2 0x30 tDH Status 10 for chip erase tBUSY DOUT tRB RY/BY# VCC tVCS Notes: 1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address. 2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command sequence. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 60 Figure 18. Program Operation Timings Program Command Sequence (last 2 cycles) tAS tWC Addresses 0x555 Program Command Sequence (last 2 cycles) tAH PA PA PA CE# tGHWL OE# tCH tWP WE# tWPH tWHWH1 tCS Data OxA0 Status PD DOUT tDS tDH RY/BY# tBUSY tRB tVCS VCC Notes: 1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address. 2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 61 Figure 19. AC Waveforms for /DATA Polling During Embedded Algorithm Operations tRC Addresses VA VA VA tACC tCH tCE CE# tOE OE# tOEH tDF WE# tOH DQ[7] Complement DQ[6:0] Status Data Comple -ment Status Data Valid Data True True Valid Data tBUSY RY/BY# Notes: 1. VA=Valid Address for reading Data# Polling status data 2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle. Figure 20. AC Waveforms for Toggle Bit During Embedded Algorithm Operations tRC Addresses VA tASO tCH tCE CE# VA VA VA tAHT TCEPH tOE OE# TOEPH tOEH tDF WE# tACC tOH Valid Status DQ6, DQ2 tBUSY (first read) Valid Status (second read) Valid Status Valid Data (stops toggling) RY/BY# Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 62 Figure 21. Alternate CE# Controlled Write Operation Timings PA for Program SA for Sector Erase 0x555 for Chip Erase 0x555 for Program 0x2AA for Erase Addresses VA tWC tAS tAH WE# tWH tGHEL OE# tCP tCPH tWHWH1 / tWHWH2 tWS CE# tDS tBUSY tDH Status Data 0xA0 for Program 0x55 for Erase RY/BY # DOUT PD for Program 0x30 for Sector Erase 0x10 for Chip Erase tRH Reset# Notes: PA = address of the memory location to be programmed. PD = data to be programmed at byte address. VA = Valid Address for reading program or erase status Dout = array data read at VA Shown above are the last two cycles of the program or erase command sequence and the last status read cycle Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command sequence. Figure 22. DQ2 vs. DQ6 Enter Embedded Erase WE# Enter Erase Suspend Program Erase Suspend Erase Enter Suspend Read Erase Resume Enter Suspend Program Erase Suspend Read Erase Erase Complete DQ6 DQ2 Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 63 TABLE 22. ERASE AND PROGRAMMING PERFORMANCE (Under recommended operating ranges) Limits Parameter Sector Erase Time Comments Typ(1) Max(2) Unit 0.2 2 sec (3) 128Mb 30 150 256Mb 60 300(3) Byte Programming Time 8 200 µs Word Programming Time 8 200 µs Total Write Buffer time 160 500(3) ACC Total Write Buffer time 60 150 Erase/Program Endurance 100K Chip Erase Time Excludes 00h programming prior to erasure sec Excludes system level overhead µs cycles Minimum 100K cycles Notes: 1. Typical program and erase times assume the following conditions: room temperature, Vcc (Typ), VIO (Typ), and checkerboard pattern programmed. 2. Maximum program and erase times assume the following conditions: worst case Vcc, 125°C and 100,000 cycles. 3. Not 100% tested. Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF CIN3 WP#/ACC Pin Capacitance VIN = 0 13 18 pF Note: Test conditions are Temperature = 25°C and f = 1.0 MHz. Table 24. 64-BALL BGA BALL CAPACITANCE @ 25°C, 1.0MHz Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 5.5 6.5 pF COUT Output Capacitance VOUT = 0 4.0 6.0 pF CIN2 Control Pin Capacitance VIN = 0 4.5 6.5 pF CIN3 WP#/ACC Pin Capacitance VIN = 0 11.0 15.0 pF Note: Test conditions are Temperature = 25°C and f = 1.0 MHz. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 64 ABSOLUTE MAXIMUM RATINGS Parameter Value Storage Temperature -65°C to +150°C Plastic Packages -65°C to +125°C Ambient Temperature With Power Applied -65°C to +125°C Surface Mount Lead Soldering Temperature Standard Package 240°C 3 Seconds Lead-free Package 260°C 3 Seconds Output Short Circuit Current1 200mA WP#/ACC2 Voltage with Respect to Ground All other -0.5V to 9.5V pins3 -0.5V to VIO + 0.5V Vcc, VIO -0.5V to +4.0V Notes: 1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second. 2. Minimum DC input voltage on WP#/ACC pin is –0.5V. During voltage transitions, WP#/ACC pin may undershoot Vss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. 3. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods up to 20ns. See figure below. 4. Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. RECOMMENDED OPERATING RANGES(1) Parameter Ambient Operating Temperature (TA) Value Extended Grade -40°C to 105°C Automotive Grade A3 -40°C to 125°C Speed and VCC, VIO Power Supply 70ns(2) VCC = 3.0V to 3.6V, VIO = 3.0V to 3.6V. 80ns(2) VCC = 2.7 V to 3.6V, VIO = 2.7V to 3.6V. 90ns(2) VCC = 3.0V to 3.6V, VIO = 1.65V to VCC. Notes 1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed. 2. 70ns device is tested at Vcc=3.0V to 3.6V, VIO = 3.0V to 3.6V, and becomes80ns at Vcc=VIO=2.7V~3.6V, 90ns at VIO=1.65V ~Vcc. Figure 23. Overshoot & Undershoot Waveform Vcc +2.0V Maximum Negative Overshoot Waveform Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 Maximum Positive Overshoot Waveform 65 Power-Up and Power-Down During power-up or power-down Vcc must always be greater than or equal to VIO (Vcc > VIO ). The device ignores all inputs until a time delay of tVCS has elapsed after the moment that Vcc and VIO both rise above, and stay above, the minimum Vcc and VIO thresholds. During tVCS the device is performing power on reset operations. During power-down or voltage drops below Vcc Lockout maximum (VLKO), the Vcc and VIO voltage must drop below Vcc Reset (VRST) minimum for a peropd of tPD for the part to initialize correctly when Vcc and VIO again rise to their operating ranges. If during a voltage drop the Vcc stays above VLKO maximum the part will stay and will work correctly when Vcc is again above Vcc minimum. If the part locks up from improper initialization, a hardware reset can be used to initialize the part correctly. Table 25. Power-Up & Power-Down Voltage and Timing Parameter VLKO (1) VRST (1) tVCS (1) tPD (1) Parameter Supply voltage (Erase and Program lock-out). Vcc below which re-inilization is required. Vcc and VIO Low voltage needed to ensure initialization will occur Vcc Setup Time. Vcc / VIO minimum voltage to first access Duration of Vcc < VRST Min 2.2V Typ Max Unit 2.5 V 0.4 V 50 us 1.0 ms Note: 1. Not 100% tested. Figure 24. Power-Up Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 66 Figure 25. Power-Down/Power-Up and Voltage drop Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 67 FIGURE 23. 56L TSOP 14mm x 20mm package outline Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 68 FIGURE 24. 64-ball Ball Grid Array (BGA), 13 X11 mm, Pitch 1mm package outline Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 69 FIGURE 25. 64-ball Ball Grid Array (BGA), 9 X 9 mm, Pitch 1mm package outline Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 70 FIGURE 26. 56-ball Ball Grid Array (BGA), 9 X 7 mm, Pitch 0.8mm package outline Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 71 ORDERING INFORMATION IS29GL 256 - 70 D L E T SECTOR for WRITE PROTECT (WP#/ACC=L) T = highest address sector protected B = lowest address sector protected H = highest address sector protected, No BYTE# (1) L = lowest address sector protected, No BYTE# (1) TEMPERATURE RANGE E = Extended (-40°C to +105°C) A3 = Automotive Grade (-40°C to +125°C) PACKAGING CONTENT L = RoHS compliant PACKAGE S = 56-pin TSOP F = 64-ball BGA 1.0mm pitch, 13mm x 11mm (Call Factory) D = 64-ball BGA 1.0mm pitch, 9mm x 9mm G = 56-ball BGA 0.8mm pitch, 9mm x 7mm (Call Factory) W = KGD (Call Factory) SPEED 70 = 70ns (2) at Vcc=3.0~3.6V, VI/O=3.0~3.6V Density 128 =128 Mb 256 =256 Mb BASE PART NUMBER IS = Integrated Silicon Solution Inc. 29GL = FLASH, 3V Page Mode Flash Memory Notes: 1. 2. No BYTE# device supports x16 org. only. Maximum speed becomes 80ns when Vcc = 2.7V ~ 3.6V, VIO = 2.7V ~ 3.6V, and 90ns when Vcc = 2.7V ~ 3.6V, VIO = 1.65V~Vcc. Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 72 256Mb Temperature E Grade: -40°C to +105°C E Grade: -40°C to +105°C, No BYTE# Auto A3 Grade: -40°C to +125°C Auto A3 Grade: -40°C to +125°C, No BYTE# Order Part Number(1) Sector for Write Protect(2) Package IS29GL256-70SLET High 56-pin TSOP IS29GL256-70DLET High 64-ball BGA (9x9mm) IS29GL256-70SLEB Low 56-pin TSOP IS29GL256-70DLEB Low 64-ball BGA (9x9mm) IS29GL256-70SLEH High 56-pin TSOP IS29GL256-70DLEH High 64-ball BGA (9x9mm) IS29GL256-70SLEL Low 56-pin TSOP IS29GL256-70DLEL Low 64-ball BGA (9x9mm) IS29GL256-70SLA3T High 56-pin TSOP IS29GL256-70DLA3T High 64-ball BGA (9x9mm) IS29GL256-70SLA3B Low 56-pin TSOP IS29GL256-70DLA3B Low 64-ball BGA (9x9mm) IS29GL256-70SLA3H High 56-pin TSOP IS29GL256-70DLA3H High 64-ball BGA (9x9mm) IS29GL256-70SLA3L Low 56-pin TSOP IS29GL256-70DLA3L Low 64-ball BGA (9x9mm) Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 73 128Mb Temperature E Grade: -40°C to +105°C E Grade: -40°C to +105°C, No BYTE# Auto A3 Grade: -40°C to +125°C Auto A3 Grade: -40°C to +125°C, No BYTE# Order Part Number(1) Sector for Write Protect(2) Package IS29GL128-70SLET High 56-pin TSOP IS29GL128-70FLET High 64-ball BGA (13x11mm) IS29GL128-70DLET High 64-ball BGA (9x9mm) IS29GL128-70SLEB Low 56-pin TSOP IS29GL128-70FLEB Low 64-ball BGA (13x11mm) IS29GL128-70DLEB Low 64-ball BGA (9x9mm) IS29GL128-70SLEH High 56-pin TSOP IS29GL128-70FLEH High 64-ball BGA (13x11mm) IS29GL128-70DLEH High 64-ball BGA (9x9mm) IS29GL128-70SLEL Low 56-pin TSOP IS29GL128-70FLEL Low 64-ball BGA (13x11mm) IS29GL128-70DLEL Low 64-ball BGA (9x9mm) IS29GL128-70SLA3T High 56-pin TSOP IS29GL128-70FLA3T High 64-ball BGA (13x11mm) IS29GL128-70DLA3T High 64-ball BGA (9x9mm) IS29GL128-70SLA3B Low 56-pin TSOP IS29GL128-70FLA3B Low 64-ball BGA (13x11mm) IS29GL128-70DLA3B Low 64-ball BGA (9x9mm) IS29GL128-70SLA3H High 56-pin TSOP IS29GL128-70FLA3H High 64-ball BGA (13x11mm) IS29GL128-70DLA3H High 64-ball BGA (9x9mm) IS29GL128-70SLA3L Low 56-pin TSOP IS29GL128-70FLA3L Low 64-ball BGA (13x11mm) IS29GL128-70DLA3L Low 64-ball BGA (9x9mm) Notes: 1. A3: Meet AEC-Q100 requirements with PPAP 2. WP#/ACC=L Integrated Silicon Solution, Inc. - www.issi.com Rev. A7 03/08/2022 74