CS20-25MO1F

CS 20-25mo1F High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC™ VRSM VDSM V VRRM VDRM V 2500 2500 VDRM = VRRM = 2500 V = 18 A IT(AV) ITSM = 200 A 5 Type 1 CS 20-25mo1F 1 5 2 Features Thyristor Symbol Conditions Maximum Ratings VDRM / RRM 2500 V 18 16 A A 200 A repetitive, IT = 40 A 100 A/µs non repetitive, IT = 20 A 250 A/µs 2500 V/µs IT(AV) IT(AV) sine 180°; TC = 90°C square; d = 1/3; TC = 90°C ITSM sine 180°; t = 10 ms; VR = 0 V; TVJ = 25°C (di/dt)cr TVJ = TVJM f = 50 Hz; tp = 200 µs VD = 2/3 VDRM IG = 0.45 A diG /dt = 0.45 A/µs (dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) Symbol Conditions VT IT = 20 A; VGT IGT VD = 6 V VGD IGD VD = 2/3 VDRM; IL Characteristic Values (TVJ = 25°C, unless otherwise specified) typ. max. TVJ = 25°C TVJ = 125°C 1.5 V 2.3 250 V mA 0.2 5 V mA tp = 10 µs; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/µs 500 mA IH VD = 6 V; RGK = ∞ 150 mA tgd VD = ½ VDRM IG = 0.45 A; diG /dt = 0.45 A/µs 2 µs IR, ID VR = VRRM; VD = VDRM; 50 µA mA RthJC DC current 0.92 K/W TVJ = TVJM TVJ = 25°C TVJ = 125°C IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 1.3 1.3 2 • high voltage thyristor - for line frequency - chip technology for long term stability • ISOPLUS i4-PAC™ high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications • controlled rectifiers - power supplies - drives • AC switches • capacitor discharge control - flash tubes - X-ray and laser generators 20110923a 1-2 CS 20-25mo1F Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS, dA A pin - K pin pin - backside metal RthCH with heatsink compound -40 ... +125 -55 ... +125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. 7 mm 5.5 mm Weight 0.15 K/W 5.5 g Dimensions in mm (1 mm = 0.0394") D2 A2 E1 D D3 D1 R Q E A L L1 b4 1 2 c 5 3x b A1 3x b2 e1 e Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e e1 L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 11.43 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.450 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite W IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 20110923a 2-2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: CS20-25mo1F