MWI50-12A7T

MWI 50-12 A7 MWI 50-12 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 85 A = 1200 V VCES VCE(sat) typ. = 2.2 V Preliminary Data Type: MWI 50-12 A7 MWI 50-12 A7T NTC - Option: without NTC with NTC 1 2 5 6 9 10 16 15 14 T NTC 3 4 17 7 8 11 12 T IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 W; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 85 60 ICM = 100 VCEK £ VCES 10 350 V V A A A µs W VCE = VCES; VGE = ±15 V; RG = 22 W; TVJ = 125°C non-repetitive TC = 25°C Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate q q q q q q q q q q q Advantages q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 3 200 100 70 500 70 7.6 5.6 3300 230 2.7 6.5 4 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.35 K/W space savings reduced protection circuits package designed for wave soldering Typical Applications q q VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V q AC motor control AC servo and robot drives power supplies Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 50 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 023 MWI 50-12 A7 MWI 50-12 A7T Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 110 70 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 50 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.2 1.6 40 200 2.6 1.8 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 20.7 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 11.3 mW Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL £ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kW K IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W Free Wheeling Diode (typ.) Cth1 = 0.16 J/K; Rth1 = 0.483 K/W Cth2 = 1.37 J/K; Rth2 = 0.127 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 5 mW mm mm K/W g Higher magnification see outlines.pdf © 2000 IXYS All rights reserved 2-4 MWI 50-12 A7 MWI 50-12 A7T 120 TJ = 25°C A 100 IC 120 A 100 IC 80 11V 11V VGE=17V 15V 13V TJ = 125°C VGE=17V 15V 13V 80 60 40 9V 60 40 20 0 0.0 9V 20 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A 100 IC VCE = 20V TJ = 25°C 180 TJ = 125°C A 150 IF TJ = 25°C 80 60 40 20 0 5 6 7 8 9 10 VGE 120 90 60 30 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics 20 V VGE Fig. 4 Typ. forward characteristics of free wheeling diode 120 300 ns trr VCE = 600V IC = 50A A IRM 15 trr 80 10 40 5 TJ = 125°C VR = 600V IF = 50A 200 IRM 100 0 0 50 100 150 200 QG 0 250 nC 0 200 400 600 MWI50-12A7 800 s A/m -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode © 2000 IXYS All rights reserved 3-4 MWI 50-12 A7 MWI 50-12 A7T 24 mJ Eon 120 ns 90 td(on) t 60 tr RG = 22W TJ = 125°C VCE = 600V VGE = ±15V 12 mJ 10 Eoff 600 Eoff ns 500 td(off) 400 t 300 200 100 0 0 20 40 60 80 IC 100 A 18 8 6 4 VCE = 600V VGE = ±15V 12 6 Eon 30 2 0 RG = 22W TJ = 125°C tf 0 0 20 40 60 IC 0 80 100 A Fig. 7 Typ. turn on energy and switching times versus collector current 20 mJ Eon 15 240 td(on) Eon ns 180 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 10 mJ 1500 ns 1200 t 900 600 300 tf 0 VCE = 600V VGE = ±15V IC = 50A TJ = 125°C 8 6 VCE = 600V VGE = ±15V IC = 50A TJ = 125°C td(off) Eoff 10 tr 120 4 60 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 RG W 0 0 10 20 30 40 50 60 70 80 90 100 RG W Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 ICM 1 K/W 0.1 RG = 22W TJ = 125°C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 80 60 40 20 0 0 200 400 ZthJC 0.01 0.001 0.0001 diode IGBT single pulse MWI50-12A7 600 800 1000 1200 V VCE 0.00001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance © 2000 IXYS All rights reserved 4-4