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W6672TE350

W6672TE350

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO-200AF

  • 描述:

    DIODE GEN PURP 1.9KV 6672A -

  • 数据手册
  • 价格&库存
W6672TE350 数据手册
Rectifier Diode Datasheet W6672T#320-350 W6672T#320 & W6672T#350 Rectifier Diode Product Summary Characteristic Value Unit VRRM 3200-3500 V IF(AV)M (TSINK = 55 °C) 6672 A IFSM 73.0 kA Rth,JK DSC 0.008 K/W Features • Low conduction losses • High temperature alloyed die construction • Low thermal impedance • Available in 26mm and 35mm package heights • High power cycling capability Agency Approvals & Environmental Environmental Approvals RoHS Applications • Line frequency applications up to 400Hz • Traction converters • Trackside substations • DC Power supplies • Input rectifiers for Variable speed drives Component Symbol Benefits • High over-load capacity • High power density 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 1. Maximum Ratings ........................................................................................................................................................... 3 2. Characteristics ................................................................................................................................................................ 3 3. Notes on Ratings and Characteristics ............................................................................................................................. 4 3.1. Voltage Grade Table ................................................................................................................................................ 4 3.2. Extension of Voltage Grades ................................................................................................................................... 4 3.3. De-rating Factor ....................................................................................................................................................... 4 3.4. Snubber Components .............................................................................................................................................. 4 3.5. Computer Modelling Parameters ............................................................................................................................ 4 3.5.1. Device Dissipation Calculations ........................................................................................................................ 4 3.6. Calculating VF using ABCD Coefficients .................................................................................................................... 5 3.7. DC Thermal Impedance Calculation ........................................................................................................................ 5 3.8. Reverse Recovery Ratings ........................................................................................................................................ 6 4. Performance Curves ....................................................................................................................................................... 7 5. Package Dimensions ..................................................................................................................................................... 10 6. Ordering Information ................................................................................................................................................... 10 7. Packing Options ............................................................................................................................................................ 10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 1. Maximum Ratings Voltage Ratings Symbol Value Unit (1) VRRM 3200-3500 V VRSM 3300-3600 V Symbol Value Unit IF(AV)M 6672 A (2) IF(AV)M 4612 A Maximum Average Forward Current, TSINK = 100 °C (3) IF(AV)M 2384 A Nominal RMS Forward Current, TSINK = 25 °C (2) IF(RMS)M 12288 A Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage (1) Ratings Maximum Average Forward Current, TSINK = 55 °C (2) Maximum Average Forward Current, TSINK = 100 °C D.C. Forward Current, TSINK = 25 °C (4) IF(DC) 10682 A Peak Non-repetitive Surge, tp = 10 ms, Vrm = 60% VRRM (5) IFSM 65.7 kA Peak Non-repetitive Surge, tp = 10 ms, VRM ≤ 10 V (5) IFSM2 73.0 kA I2t 21.58 x 106 A2s I2t 26.65 x 106 A2s Operating Temperature range TJ,OP -40 to +160 °C Storage Temperature Range TSTG -55 to +160 °C I2t capacity for Fusing, tp = 10 ms, VRM = 60% VRRM (5) I2t capacity for Fusing, tp = 10 ms, VRM ≤ 10 V (5) Footnote 1: De-rating factor of 0.13% per °C is applicable for TJ below 25 °C Footnote 2: Double side cooled, single phase; 50 Hz, 180° half-sinewave Footnote 3: Cathode side cooled, single phase; 50 Hz, 180° half-sinewave Footnote 4: Double side cooled Footnote 5: Half-sinewave, 160 °C TJ initial 2. Characteristics Characteristic Symbol Value Conditions Min Typ Max IFM = 5000 A - - 1.18 IFM = 8000 A - - 1.37 Unit Maximum Peak Forward Voltage VFM Threshold Voltage V0 - - - 0.864 V Slope Resistance rS - - - 0.067 mΩ Peak Reverse Current IRRM Rated VRRM - - 100 mA Recovered Charge Qrr - 9500 - µC Recovered Charge, 50% Chord Qra - 7200 7900 µC Reverse Recovery Current Irm - 280 - A Reverse Recovery Time, 50% Chord trr - 52 - µs Double Side Cooled - - 0.008 Rth,JK Anode Side Cooled - - 0.013 - - 0.020 F Cathode Side Cooled For other clamp forces, please consult factory - 60 - 70 kN - 1.2 - kg Thermal Resistance, Junction to Heatsink Mounting Force Weight Wt ITM = 4000 A, tp = 1000 µs, di/dt = 10 A/µs, Vr = 100 V V K/W Note: Unless otherwise indicated, TJ = 160 °C 3 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 3. Notes on Ratings and Characteristics 3.1. Voltage Grade Table 32 VRRM (V) 3200 VRSM (V) 3300 VR (VDC) 1750 35 3500 3600 1900 Voltage Grade 3.2. Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3.3. De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for TJ below 25 °C. 3.4. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 3.5. Computer Modelling Parameters 3.5.1. Device Dissipation Calculations 𝑊𝐴𝑉 = 2 −𝑉0 + √𝑉0 + 4 ∙ 𝑓𝑓 2 ∙ 𝑟𝑠 ∙ 𝑊𝐴𝑉 𝐼𝐴𝑉 = and 2 ∙ 𝑓𝑓 2 ∙ 𝑟𝑠 ∆𝑇 𝑅𝑡ℎ ∆𝑇 = 𝑇𝐽,𝑀𝑎𝑥 − 𝑇𝐾 Where: • V0 = 0.864 V • rS = 0.067 mΩ • Rth = Supplementary thermal impedance, see Table 1 below • ff = Form factor, see Table 2 below Supplementary Thermal Impedance 6 Phase (60°) 3 Phase (120°) ½ Phase (180°) DC Square Wave Double Side Cooled Conduction Angle 0.00866 0.00847 0.00832 0.00800 Square Wave Cathode Side Cooled 0.02118 0.02101 0.02086 0.02000 Sine Wave Double Side Cooled 0.00855 0.00837 0.00813 - 0.02068 - Sine Wave Cathode Side Cooled 0.02108 0.02091 Table 1. Supplementary Thermal Impedance Values Form Factors 6 Phase (60°) 3 Phase (120°) ½ Phase (180°) DC Square Wave Conduction Angle 2.449 1.732 1.414 1 Sine Wave 2.778 1.57 - 1.879 Table 2. Form Factor Values 4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 3.6. Calculating VF using ABCD Coefficients The on-state characteristic IF vs. VF, on page 7 are represented in two ways: • The well-established V0 and rS tangent used for rating purposes • A set of constants A, B, C, D, forming the coefficients of the representative equation for VF in terms of IF given below: 𝑉𝐹 = 𝐴 + 𝐵 ∙ ln(𝐼𝐹 ) + 𝐶 ∙ 𝐼𝐹 + 𝐷 ∙ √𝐼𝐹 The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VF agree with the true device characteristic over a current range, which is limited to that plotted. 25 °C Coefficients 160 °C Coefficients A 0.7063900 A 0.39067 B 0.01555266 B 0.033410 C 2.926184 x 10-5 C 4.7250 x 10-5 D 10-3 D 3.8157 x 10-3 3.197501 x 3.7. DC Thermal Impedance Calculation 𝑝=𝑛 −𝑡 𝑟𝑡 = ∑ 𝑟𝑝 ∙ (1 − 𝑒 𝜏𝑝 ) 𝑝=1 Where p = 1 to n, n is the number of terms in the series and: • T = Duration of heating pulse in seconds • rt = Thermal resistance at time t • rp = Amplitude of pth term • τp = Time constant of rth term The coefficients for this device are show in the tables below: D.C. Double Side Cooled Term 1 2 3 4 rp 3.81150 x 10-3 1.89558 x 10-3 1.71360 x 10-3 5.24282 x 10-3 τp 1.01434 0.34872 0.08992 Table 3. Coefficient Values for D.C. Double Side Cooled 0.01065 D.C. Cathode Side Cooled Term 1 2 3 rp 0.01653 3.37618 x 10-3 5.93598 x 10-4 τp 5.31595 0.15120 Table 4. Coefficient Values for D.C. Cathode Side Cooled 5 0.01207 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 3.8. Reverse Recovery Ratings • Qra is based on 50% Irm chord as shown in Diagram 1 Diagram 1. Reverse Recovery Waveform Example 150 µ𝑠 • Qrr is based on a 150 µs integration time. I.e.: 𝑄𝑟𝑟 = ∫0 • 𝐾 𝐹𝑎𝑐𝑡𝑜𝑟 = 𝑖𝑟𝑟 ∙ 𝑑𝑡 𝑡1 𝑡2 6 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 4. Performance Curves Figure 1. Forward Characteristics of Limit Device Figure 2. Transient Thermal Impedance 10000 0.1 W6672T#320-350 Issue A1 KSC 0.0205 K/W ASC 0.0133 K/W 0.01 TJ = 160 °C 1000 Thermal Impedance (K/W) Instaneous On-state Current, IFM (A) DSC 0.0080 K/W TJ = 25 °C 0.001 0.0001 W6672T#320-350 Issue A1 100 0 0.5 1 1.5 0.00001 0.0001 0.001 2 0.01 Instantaneous On-state Voltage, VFM (V) Figure 3. Total Recovered Charge, Qrr 1 10 100 Figure 4. Recovered Charge, Qra (50% Chord) 100000 100000 W6672T#320-350 Issue A1 Recovered Charge - 50% Chord, Qra (µC) W6672T#320-350 Issue A1 Total Recovered Charge, Qrr (µC) 0.1 Time (s) 4000 A 3000 A 2000 A 1000 A 10000 4000 A 3000 A 2000 A 1000 A 10000 (TJ = 160 °C) (TJ = 160 °C) 1000 1000 1 10 100 1000 1 di/dt (A/µs) 10 100 1000 di/dt (A/µs) 7 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 Figure 5. Peak Reverse Recovery Current, Irm Figure 6. Maximum Recovery Time, trr (50% Chord) 10000 100 W6672T#320-350 Issue A1 Reverse Recovery Time - 50% Chord, trr (µs) Reverse Recovery Current, Irm (A) W6672T#320-350 Issue A1 4000 A 3000 A 2000 A 1000 A 1000 4000 A 3000 A 2000 A 1000 A (TJ = 160 °C) (TJ = 160 °C) 100 10 1 10 100 1000 1 10 100 di/dt (A/µs) di/dt (A/µs) Figure 7. Forward Current vs. Power Dissipation (Double Side Cooled) Figure 8. Forward Current vs. Heat Sink Temperature (Double Side Cooled) 18000 160 d.c. 6ø 16000 W6672T#320-350 Issue A1 3ø 1/2 wave Maximum Permissable Heatsink Temperature (°C) 140 14000 Maximum Forward Dissipation (W) 1000 12000 10000 8000 6000 4000 120 100 80 60 40 20 2000 6ø 3ø 1/2 wave d.c. W6672T#320-350 Issue A1 0 0 0 2000 4000 6000 8000 10000 12000 0 Mean Forward Current (A) (Whole Cycle Averaged) 2000 4000 6000 8000 10000 12000 Mean Forward Current (A) (Whole Cycle Averaged) 8 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 Figure 9. Forward Current vs. Power Dissipation (Cathode Side Cooled) Figure 10. Forward Current vs. Heatsink Temperature (Cathode Side Cooled) 8000 160 W6672T#320-350 Issue A1 d.c. 7000 140 3ø 1/2 wave Maximum Permissable Heatsink Temperature (°C) Maximum Forward Dissipation (W) 6ø 6000 5000 4000 3000 2000 1000 120 100 80 60 40 20 6ø 3ø 1/2 wave d.c. W6672T#320-350 Issue A1 0 0 0 1000 2000 3000 4000 5000 6000 0 1000 Mean Forward Current (A) (Whole Cycle Averaged) 2000 3000 4000 5000 6000 Mean Forward Current (A) (Whole Cycle Averaged) Figure 11. Maximum Surge Current 1000000 1E+09 W6672T#320-350 Issue A1 I2t: VRRM ≤ 10 V I2t: 60% VRRM 100000 100000000 Maximum I2t (A2s) Total Peak Half Sine Surge Current (A) (TJ (initial) = 160 °C) ITSM: VRRM ≤ 10 V ITSM: 60% VRRM 10000 10000000 1 3 5 10 ______________________ Duration of Surge 1 5 10 50 100 ____________________________________________ Duration of Surge (Cycles @ 50 Hz) 9 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20 Rectifier Diode Datasheet W6672T#320-350 5. Package Dimensions 6. Ordering Information W6672 Fixed Type Code Outline Code TE = 35 ± 1 mm TJ = 26 ± 1 mm 7. Packing Options ◊◊ Voltage Code VRRM/100 32-35 0 Fixed Code Order Code: W6672TJ350 – 3500 VRRM, 26 mm clamp height capsule Part Number M.O.Q. W6672TJ320 1 W6672TJ350 1 W6672TE320 1 W6672TE350 1 For additional information please visit www.Littelfuse.com/powersemi Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 10 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8-Dec-20
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