DSB60C45HB

DSB60C45HB preliminary Schottky Diode VRRM = 45 V I FAV = 2x 30 A VF = 0.58 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSB60C45HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309d DSB60C45HB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 45 V VR = 45 V TVJ = 25°C 10 mA 45 V TVJ = 100°C 100 mA TVJ = 25°C 0.62 V 0.88 V 0.58 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 125 °C TC = 125 °C 0.86 V T VJ = 150 °C 30 A TVJ = 150 °C 0.31 V 8.7 mΩ d = 0.5 for power loss calculation only 0.95 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2021 IXYS all rights reserved max. Unit 45 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 5 V f = 1 MHz 130 570 980 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20210309d DSB60C45HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 150 °C -55 125 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D S B 60 C 45 HB IXYS Logo g = = = = = = = Diode Schottky Diode ultra low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSB60C45HB Similar Part DSB60C45PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSB60C45HB Package TO-220AB (3) * on die level Delivery Mode Tube Code No. 505549 Voltage class 45 T VJ = 150°C Schottky V 0 max threshold voltage 0.31 V R0 max slope resistance * 6.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309d DSB60C45HB preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309d