IXTP4N60P

IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 600V = 4A  2  TO-251 (IXTU) G D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 4 A IDM TC = 25C, Pulse Width Limited by TJM 10 A TJM 4 OBSOLETE 150 IXTY4N60P 10 90 IXTA4N60P -55 ... +150 IXTP4N60P 150 Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.40 0.35 2.50 3.00 g g g g IA TC = 25C EAS TC = 25C dv/dt IS  IDM, VDD  VDSS, TJ  150°C PD TC = 25C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263 & TO-251) Mounting Torque (TO-220) Weight TO-251 TO-252 TO-263 TO-220 D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) A mJ V/ns GD S W C C Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 100μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages   V D = Drain Tab = Drain Features  V 5.5 G = Gate S = Source D (Tab) High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  100 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 1 A 50 A 2   DS99423F(6/17) IXTU4N60P IXTA4N60P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 2.8 VDS = 10V, ID = 0.5 • ID25, Note 1 4.6 S 635 pF 65 pF Crss 5.7 pF Qg(on) 13 nC 6 nC 4 nC 25 ns 10 ns 50 ns 20 ns Ciss Coss Qgs VGS = 0V, VDS = 25V, f = 1MHz VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) 1.4 C/W RthJC RthCS IXTY4N60P IXTP4N60P TO-220 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 4A, -di/dt = 100A/μs, VR = 100V C/W OBSOLETE Characteristic Values Min. Typ. Max IXTY4N60P 4 IXTA4N60P12 IXTP4N60P1.5 500 A A V ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTU4N60P IXTA4N60P IXTY4N60P IXTP4N60P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 4.0 8 VGS = 10V 8V 3.5 7 7V 3.0 6 2.5 I D - Amperes I D - Amperes VGS = 10V 8V 2.0 1.5 1.0 5 7V 4 3 2 6V 0.5 1 0.0 6V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 VDS - Volts 20 25 30 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.2 4.0 VGS = 10V 3.5 VGS = 10V 2.8 OBSOLETE IXTY4N60P IXTA4N60P IXTP4N60P RDS(on) - Normalized 7V 3.0 I D - Amperes 15 VDS - Volts 2.5 2.0 6V 1.5 1.0 2.4 I D = 4A 2.0 I D = 2A 1.6 1.2 0.8 0.5 5V 0.4 0.0 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 3.0 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 4.5 VGS = 10V 4.0 o TJ = 125 C 2.5 3.5 3.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 o TJ = 25 C 1.5 2.5 2.0 1.5 1.0 1.0 0.5 0.0 0.5 0 1 2 3 4 5 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTU4N60P IXTA4N60P IXTY4N60P IXTP4N60P Fig. 8. Transconductance Fig. 7. Input Admittance 6 o 10 VDS = 10V TJ = - 40 C VDS = 10V 5 8 3 g f s - Siemens I D - Amperes 4 o TJ = 125 C o 25 C 2 o 25 C 6 o 125 C 4 o - 40 C 2 1 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 1 2 4 5 6 7 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 9 10 VDS = 300V I D = 2A 8 OBSOLETE IXTY4N60P IXTA4N60P IXTP4N60P I G = 10mA 7 VGS - Volts 8 I S - Amperes 3 I D - Amperes VGS - Volts 6 o TJ = 125 C 4 6 5 4 3 o TJ = 25 C 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 Fig. 13. Maximum Transient Thermal Impedance 10 0 1.0 2 4 VSD - Volts Fig. 11. Capacitance 8 10 12 14 Fig. 12. Maximum Transient Thermal Impedance 1,000 2 1 Z (th)JC - K / W Ciss Capacitance - PicoFarads 6 QG - NanoCoulombs 100 Coss 0.1 10 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_4N60P(23) 6-20-17-A IXTU4N60P IXTA4N60P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 1 - Gate 2,4 - Drain 3 - Source c 0 5.55MIN OPTIONAL 1 L2 3 6.40 2.85MIN 4 © 2017 IXYS CORPORATION, All Rights Reserved H1 Q L3 c D2 e 0.43 [11.0] D1 e E1 L1 L 0.12 [3.0] 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 0.06 [1.6] 2.28 1.25MIN LAND PATTERN RECOMMENDATION TO-251 OUTLINE A1 0 1 - Gate 2,4 - Drain 3 - Source 4 A oP D b b2 A1 H 0.34 [8.7] 6.50MIN BOTTOM VIEW 2 E D1 D H IXTY4N60P IXTP4N60P e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source OBSOLETE IXTY4N60P IXTA4N60P IXTP4N60P Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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