IXTQ75N10P

PolarHTTM Power MOSFET IXTA 75N10P IXTP 75N10P IXTQ 75N10P = = ≤ VDSS ID25 RDS(on) 100 V 75 A Ω 25 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C IDM TC = 25° C, pulse width limited by TJM IAR 75 A 200 A TC = 25° C 50 A EAR TC = 25° C 30 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) G (TAB) TO-220 (IXTP) G TO-3P (IXTQ) G D (TAB) S G = Gate S = Source g g g D = Drain TAB = Drain Features l l l Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved (TAB) D S 1.13/10 Nm/lb.in. 5.5 4 3 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) S V TJ = 125° C 21 5.5 V ±100 nA 25 250 µA µA 25 mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99158E(12/05) IXTA 75N10P IXTP 75N10P IXTQ 75N10P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 Ciss Coss 28 S 2250 pF 890 pF 275 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 27 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 53 ns td(off) RG = 10 Ω (External) 66 ns tf 45 ns Qg(on) 74 nC 18 nC 40 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42°C/W (TO-3P) (TO-220) Source-Drain Diode °C/W °C/W 0.21 0.25 Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 75 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/µs VR = 50 V QRM TO-3P (IXTQ) Outline 120 ns 2.0 µC TO-220 (IXTP) Outline TO-263 (IXTA) Outline Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte r is tics @ 25º C @ 25º C 80 120 V GS = 10V 70 110 9V 60 90 50 I D - Amperes I D - Amperes V GS = 10V 100 8V 40 30 7V 20 9V 80 70 60 8V 50 40 30 7V 20 10 10 6V 0 6V 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 1 2 3 V D S - V olts Fig. 3. Output Characte ris tics @ 125ºC 6 7 8 9 10 11 12 2.2 V GS = 10V 70 R D S ( o n ) - Normalized 50 8V 40 30 7V 20 6V 10 0 0.5 1 1.5 2 2.5 V D S - V olts 1.8 1.6 I D = 75A 1.4 I D = 37.5A 1.2 1 0.8 5V 0 V GS = 10V 2 9V 60 I D - Amperes 5 V D S - V olts Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 80 0.6 3 3.5 4 4.5 -50 2.6 0 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 0.5 ID25 V alue vs . ID 2.8 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 80 V GS = 10V 70 2.4 60 2.2 I D - Amperes R D S ( o n ) - Normalized 4 TJ = 125ºC 2 1.8 1.6 1.4 50 40 30 20 1.2 10 TJ = 25ºC 1 0.8 0 0 20 40 60 I D - A mperes © 2006 IXYS All rights reserved 80 100 120 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 8. Transconductance Fig. 7. Input Adm ittance 40 120 36 105 32 g f s - Siemens I D - Amperes 90 75 60 45 30 28 TJ = -40ºC 24 25ºC 125ºC 20 16 12 TJ = 125ºC 8 25ºC -40ºC 4 15 0 0 5 6 7 8 9 10 0 11 20 40 60 V G S - Volts 100 120 200 10 180 9 VDS = 50V 160 8 I D = 37.5A 140 7 I G = 10mA 120 100 80 160 180 70 80 6 5 4 3 TJ = 125ºC 40 2 TJ = 25ºC 20 1 0 0 0.5 0.7 0.9 1.1 V S D - Volts 1.3 1.5 1.7 0 10 20 30 40 50 60 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TJ = 150ºC R DS(on) Limit TC = 25ºC C iss I D - Amperes Capacitance - picoFarads 140 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 80 I D - Amperes C oss 1000 100 25µs 100µs 1ms 10ms 10 DC C rss 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e 0.45 0.40 R ( t h ) J C - ºC / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.