IXTT16N20D2

IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) = >  200V 16A 80m  D N-Channel TO-268 (IXTT) G G S S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 695 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 200 VGS(off) VDS = 25V, ID = 4mA IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 8A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 - 2.0 V 100 nA 5 A 100  A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 80 m 16 D D (Tab) S G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages V - 4.5 G A • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100260E(4/17) IXTT16N20D2 IXTH16N20D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 8A, Note 1 7 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = + 5V, VDS = 100V, ID = 8A RG = 3.3 (External) Qg(on) Qgs RthJC RthCS 12 S 5500 pF 1360 pF 607 pF 46 ns 130 ns 270 ns 135 ns 208 nC 28 nC 110 nC 0.21 0.18 C/W C/W VGS = + 5V, VDS = 100V, ID = 8A Qgd TO-247 TO-247 Outline Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 200V, ID = 2.1A, TC = 75C, tp = 5s 420 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 16A, VGS = -10V, Note 1 trr IRM QRM IF = 8A, -di/dt = 100A/s VR = 100V, VGS = -10V 265 14.3 1.9 1.3 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Characteristic Values Min. Typ. Max. 0.8 1 V ns A μC Note 1. Pulse test, t  300s, duty cycle, d  2%. Terminals: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT16N20D2 IXTH16N20D2 o o Fig. 1. Output Characteristics @ TJ = 25 C 16 VGS = 5V 4V 3V 2V 14 12 VGS = 5V 180 4V 160 140 1V 10 I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25 C 200 0V 8 6 3V 120 100 2V 80 60 1V -1V 4 40 2 0 0 0.1 0.2 0.3 0.4 - 2V 20 - 3V 0 0.5 0.6 0V -1V - 2V 0 0.7 5 10 I D - Amperes I D - Amperes VGS = 0V 28 0V -1V - 0.4V 20 - 0.8V 16 12 4 - 1.2V 8 - 2V 2 - 1.6V 4 - 2.0V - 2.4V - 3V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 VDS - Volts o 50 Fig. 6. Dynamic Resistance vs. Gate Voltage ∆ VDS = 50V - 25V 1.E+09 32 1.E+08 28 - 0.4V 1.E+07 24 RO - Ohms I D - Amperes 40 1.E+10 VGS = 0V 36 30 VDS - Volts Fig. 5. Drain Current @ TJ = 100 C 40 35 32 24 6 30 Fig. 4. Drain Current @ TJ = 25 C 10 8 25 36 VGS = 5V 3V 2V 1V 12 20 o o Fig. 3. Output Characteristics @ TJ = 125 C 16 14 15 VDS - Volts VDS - Volts - 0.8V 20 16 - 1.2V 4 o TJ = 25 C 1.E+05 o TJ = 100 C 1.E+04 12 8 1.E+06 - 1.6V 1.E+03 - 2.0V - 2.4V 1.E+02 0 1.E+01 0 10 20 30 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 40 50 -5 -4 -3 -2 VGS - Volts -1 0 IXTT16N20D2 IXTH16N20D2 Fig. 8. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 1.6 2.6 VGS = 0V 1.5 I D = 8A VGS = 0V 5V 2.2 RDS(on) - Normalized RDS(on) - Normalized 1.4 1.3 1.2 1.1 1.8 1.4 o TJ = 125 C 1.0 o 1.0 TJ = 25 C 0.6 0.9 0.8 0.2 -50 -25 0 25 50 75 100 125 150 0 5 10 15 Fig. 9. Input Admittance 25 30 35 40 Fig. 10. Transconductance 50 30 VDS = 20V VDS = 20V o o o TJ = - 40 C, 25 C, 125 C 25 g f s - Siemens 40 I D - Amperes 20 I D - Amperes TJ - Degrees Centigrade 30 20 o TJ = 125 C o 25 C o - 40 C 10 20 15 10 5 0 0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0 1.0 5 10 15 20 25 30 35 40 45 50 I D - Amperes VGS - Volts Fig. 11. Normalized Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 30 1.3 VGS = -10V 25 1.2 20 I S - Amperes BV / VGS(off) VGS(off) @ VDS = 25V 1.1 BVDSX @ VGS = - 5V 1.0 15 10 o TJ = 125 C 0.9 o TJ = 25 C 5 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTT16N20D2 IXTH16N20D2 Fig. 14. Gate Charge Fig. 13. Capacitance 5 100,000 VDS = 100V 4 f = 1 MHz I D = 8A I G = 10mA 2 10,000 Ciss VGS - Volts Capacitance - PicoFarads 3 Coss 1,000 1 0 -1 -2 -3 -4 Crss -5 100 0 5 10 15 20 25 30 35 0 40 20 40 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs VDS - Volts Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area o o @ TC = 25 C @ TC = 75 C 1,000 1,000 o o TJ = 150 C TJ = 150 C o o TC = 25 C Single Pulse RDS(on) Limit 100 100μs 1ms I D - Amperes 25μs I D - Amperes 100 TC = 75 C Single Pulse 10 RDS(on) Limit 25μs 100μs 10 1ms 10ms 100ms DC DC 1 1 1.000 10ms 100ms 1 10 100 VDS - Volts 1,000 1 Fig. 17. Maximum Transient Thermal Impedance 10 100 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 0.300 Z(th)JC - K / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_16N20D2(8C)4-08-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.