IXYT30N450HV

Advance Technical Information High Voltage XPTTM IGBT IXYT30N450HV IXYH30N450HV VCES = 4500V IC110 = 30A VCE(sat)  3.9V TO-268HV (IXYT) G E Symbol Test Conditions C (Tab) Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1ms 200 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 90 3600 A V PC TC = 25°C 430 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in 4.0 6.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247HV) Weight TO-268HV TO-247HV TO-247HV (IXYH) G E C G = Gate E = Emitter     BVCES IC = 250μA, VGE = 0V 4500 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 3.2 TJ = 125°C © 2014 IXYS CORPORATION, All Rights Reserved V 25 μA 1 mA TJ = 125°C IGES 5.0 4.5 High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages  Characteristic Values Min. Typ. Max. C = Collector Tab = Collector Features  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C (Tab) Low Gate Drive Requirement High Power Density Applications    ±200 nA  3.9 V  Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100614(5/14) IXYT30N450HV IXYH30N450HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 11 Cies Coes TO-268HV Outline E 18 S 1840 pF 83 pF VCE = 25V, VGE = 0V, f = 1MHz Cres 35 pF Qg 88 nC 11 nC Qgc 40 nC td(on) 38 ns 318 ns 168 ns 1220 ns 42 ns 590 ns 180 ns 1365 ns Qge tr td(off) tf td(on) tr td(off) tf IC = 30A, VGE = 15V, VCE = 1000V Resistive Switching Times, TJ = 25°C IC = 30A, VGE = 15V VCE = 960V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 30A, VGE = 15V VCE = 960V, RG = 10 RthJC RthCS L2 3 E1 D 1 H 2 3 2 C e D1 D2 A1 L4 e A C2 D3 1 b PINS: 1 - Gate 2 - Emitter 3 - Collector L3 A2 L 0.29 °C/W TO-247HV 0.21 °C/W TO-247HV Outline E R 0P A A2 E1 0P1 Q S Note: 1. Pulse test, t < 300s, duty cycle, d < 2%. D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector 3X ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXYT30N450HV IXYH30N450HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 280 60 VGE = 25V 19V 15V 13V 11V 50 VGE = 25V 23V 21V 240 19V 17V 200 I C - Amperes I C - Amperes 40 9V 30 15V 160 13V 120 20 11V 80 7V 10 9V 40 7V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 5 10 15 60 2.4 VGE = 25V 19V 15V 13V 11V 2.2 VCE(sat) - Normalized I C - Amperes 30 VGE = 15V 2.0 40 9V 30 20 7V I C = 60A 1.8 1.6 I C = 30A 1.4 1.2 1.0 I C = 15A 0.8 10 0.6 5V 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 VCE - Volts 25 50 75 125 150 Fig. 6. Input Admittance 80 TJ = 25ºC 70 7 TJ = - 40ºC 25ºC 125ºC 60 I C - Amperes 6 I C = 60A 5 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 VCE - Volts 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 50 20 VCE - Volts VCE - Volts 50 40 30 4 30A 20 15A 10 3 0 2 6 7 8 9 10 11 12 13 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 10 IXYT30N450HV IXYH30N450HV Fig. 7. Transconductance Fig. 8. Gate Charge 30 16 TJ = - 40ºC VCE = 1000V 14 25 I C = 30A I G = 10mA 25ºC 15 125ºC VGE - Volts g f s - Siemens 12 20 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 0 80 10 20 30 I C - Amperes 40 50 60 70 80 90 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 100 f = 1 MHz 90 70 Cies 1,000 I C - Amperes Capacitance - PicoFarads 80 Coes 100 60 50 40 30 TJ = 125ºC 20 Cres RG = 15Ω dv / dt < 10V / ns 10 0 10 0 5 10 15 20 25 30 35 500 40 1000 1500 2000 2500 3000 3500 4000 4500 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: Y_30N450(H7-645) 5-20-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.