IXYX40N450HV

Preliminary Technical Information High Voltage XPTTM IGBT IXYX40N450HV VCES = 4500V IC110 = 40A VCE(sat)  3.9V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 95 A IC110 TC = 110°C 40 A ICM TC = 25°C, 1ms 350 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 120 3600 A V PC TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120/4.5..27 N/lb 6 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight G E C G = Gate C = Collector Tab E = Emitter Tab = Collector Features     High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages   Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 4500 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V VCE = 0V, VGE = ± 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 3.2 TJ = 125°C © 2016 IXYS CORPORATION, All Rights Reserved 4.0  5.0 V  25 μA  1.25 mA TJ = 125°C IGES  ±200 nA 3.9 V  Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100616A(8/16) IXYX40N450HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 40A, VCE = 10V, Note 1 18 TO-247PLUS-HV Outline 30 S 3550 pF 146 pF Cres 67 pF Qg 170 nC 19 nC 70 nC Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 40A, VGE = 15V VCE = 960V, RG = 2 Resistive Switching Times, TJ = 125°C IC = 40A, VGE = 15V VCE = 960V, RG = 2 36 ns 330 ns 110 ns 1120 ns 46 ns 740 ns 118 ns 1010 ns RthJC E1 A D1 D 4 1 3 2 D3 D2 L1 A3 E2 E3 2X L e e1 A1 4X b c 3X 1 - Gate 2 - Emitter 3,4 - Collector 0.19 °C/W RthCS Note: A2 Q Cies Coes E R 0.15 °C/W 1. Pulse test, t < 300s, duty cycle, d < 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 3X b1 IXYX40N450HV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 280 80 VGE = 25V 19V 15V 13V 11V 70 60 13V 200 9V 50 I C - Amperes I C - Amperes 15V VGE = 25V 19V 17V 240 40 30 7V 11V 160 120 9V 80 20 40 10 5V 7V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 10 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 2.0 VGE = 25V 21V 17V 15V 13V 60 11V 30 VGE = 15V 1.8 I C = 80A 1.6 9V VCE(sat) - Normalized 70 I C - Amperes 5 VCE - Volts 50 40 30 7V 1.4 I C = 40A 1.2 1.0 20 0.8 10 0.6 I C = 20A 5V 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 75 100 125 150 9 10 11 Fig. 6. Input Admittance 140 TJ = 25ºC 7 120 100 5 I C - Amperes 6 V CE - Volts 25 TJ - Degrees Centigrade I C = 80A 4 40A 80 60 40 3 2 TJ = 125ºC 25ºC - 40ºC 20 20A 0 1 5 10 15 20 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 25 3 4 5 6 7 VGE - Volts 8 IXYX40N450HV Fig. 7. Transconductance Fig. 8. Gate Charge 16 50 TJ = - 40ºC 45 VCE = 1000V 14 I C = 40A 40 30 125ºC VGE - Volts g f s - Siemens 12 25ºC 35 I G = 10mA 25 20 10 8 6 15 4 10 2 5 0 0 0 20 40 60 80 100 120 0 140 20 40 I C - Amperes 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 140 10,000 100 1,000 I C - Amperes Capacitance - PicoFarads 120 Cies Coes 80 60 100 40 TJ = 125ºC Cres RG = 10Ω dv / dt < 10V / ns 20 f = 1 MHz 0 10 0 5 10 15 20 25 30 35 500 40 1000 1500 2000 2500 3000 3500 4000 4500 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: Y_40N450(H8) 5-23-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.