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BC847T

BC847T

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT-523-3

  • 描述:

    SOT-523 塑料封装晶体管

  • 数据手册
  • 价格&库存
BC847T 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors BC847T TRANSISTOR (NPN) SOT-523 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Symbol Collector-Base Voltage Parameter 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC* Collector Power Dissipation 150 mW TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE= 1 µA, IC=0 6 V Collector Cutoff Current DC current gain ICBO VCB=30V 15 BC847AT BC847BT hFE VCE= 5V, IC= 2mA BC847CT Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter VBE(on) voltage Transition frequency fT Collector output capacitance Noise figure Cob BC847BT NF BC847CT www.jscj-elec.com 1 110 220 200 450 420 800 IC=10mA, IB=0. 5mA 0.25 IC=100mA, IB= 5mA 0.6 IC=10mA, IB=0. 5mA 0.7 IC=100mA, IB= 5mA 0.9 VCE= 5V, IC= 2mA 580 VCE= 5V, IC= 10mA VCE= 5 V, IC= 10mA f=100MHz 660 nA V V 700 770 100 V MHz VCB=10V,f=1MHz 4.5 VCE=5V,f=1kHz, 10 RS=2kΩ,BW=200Hz 4 pF dB Rev. - 2.0 Typical Characteristics Static Characteristic 10 COMMON EMITTER Ta=25℃ (mA) hFE 3000 —— IC COMMON EMITTER VCE= 5V Ta=100℃ 1000 8 hFE 20uA COLLECTOR CURRENT DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 7 1 VCEsat IC 100 —— IC (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 200 400 600 10 0.25 800 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib 10 CAPACITANCE C (pF) Ta=25 ℃ Cob 1 8 —— IC 10 12 125 150 (mA) Ta 150 100 50 0 1 REVERSE VOLTAGE www.jscj-elec.com 6 PC 200 f=1MHz IE=0/IC=0 0.1 0.1 4 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta (℃ ) Rev. - 2.0 SOT-523 Package Outline Dimensions Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Max. Min. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° SOT-523 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-523 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0
BC847T 价格&库存

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BC847T
    •  国内价格
    • 1+0.09240
    • 30+0.08910
    • 100+0.08580
    • 500+0.07920
    • 1000+0.07590
    • 2000+0.07392

    库存:0