JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate MOSFETS
CJ3134K
N-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
20 V
SOT-723
380mΩ@ 4.5V
450mΩ@ 2.5V
0.75A
800mΩ@1.8V
1. GATE
2. SOURCE
3. DRAIN
FEATURES
z Lead Free Product is Acquired
z Surface Mount Package
z N-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
MARKING
APPLICATION
z Load/Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Value
Unit
Drain-Source Voltage
Parameter
Symbol
VDS
20
V
Typical Gate-Source Voltage
VGS
±12
V
Continuous Drain Current (note 1)
ID
0.75
A
Pulsed Drain Current
IDM
1.8
A
PD
150
mW
RθJA
833
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
TL
260
℃
(tp=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
,2013
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1
E,Aug,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
V (BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±20
µA
VGS(th)
VDS =VGS, ID =250µA
0.54
1.1
V
VGS =4.5V, ID =0.65A
270
380
mΩ
VGS =2.5V, ID =0.55A
320
450
mΩ
VGS =1.8V, ID =0.45A
390
800
mΩ
1.6
Drain-source breakdown voltage
Gate threshold voltage (note 2)
Drain-source on-resistance (note 2)
RDS (on)
Forward transconductance (note 2)
gFS
VDS =10V, ID =0.8A
Diode forward voltage
VSD
IS=0.15A, VGS = 0V
20
0.35
V
S
1.2
V
79
120
pF
13
20
pF
15
pF
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
9
td(on)
6.7
ns
VGS=4.5V,VDS=10V,
4.8
ns
ID =500mA,RGEN=10Ω
17.3
ns
7.4
ns
VDS =16V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time (note 3)
Turn-on rise time (note 3)
tr
Turn-off delay time (note3)
td(off)
Turn-off fall time (note 3)
tf
Notes :
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
B Dec,2013
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2
E,Aug,2015
Typical Characteristics
Output Characteristics
Transfer Characteristics
5.0
4.5
4.0
VGS=4V,5V
Ta=25℃
VDS=3V
VGS=3V
3.5
VGS=2.5V
3.0
Pulsed
Pulsed
(A)
ID
3.5
3.0
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
4.0
VGS=2V
2.5
2.0
1.5
Ta=25℃
2.5
Ta=100℃
2.0
1.5
1.0
VGS=1.5V
1.0
0.5
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DRAIN TO SOURCE VOLTAGE
4.0
VDS
4.5
5.0
0
(V)
1
2
GATE TO SOURCE VOLTAGE
3
VGS
4
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
500
800
Ta=25℃
Pulsed
Pulsed
700
(m)
400
350
VGS=2.5V
300
VGS=4.5V
500
250
200
0.1
ID=0.65A
600
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
VGS=1.8V
RDS(ON)
450
Ta=100℃
400
300
Ta=25℃
200
100
0.2
0.3
0.4
0.5
0.6
0.7
DRAIN CURRENT
0.8
ID
0.9
1.0
1.1
1.2
1
(A)
2
3
GATE TO SOURCE VOLTAGE
4
VGS
5
(V)
Threshold Voltage
IS —— VSD
2
0.8
Pulsed
1
VTH
Ta=100℃
0.1
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
0.7
Ta=25℃
0.6
ID=250uA
0.5
0.4
0.3
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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1.2
1.4
0.2
25
1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
(℃ )
E,Aug,2015
SOT-723 Package Outline Dimensions
Dimensions In Millimeters
Min.
Max.
0.430
0.500
0.000
0.050
0.170
0.270
0.270
0.370
0.080
0.150
1.150
1.250
1.150
1.250
0.750
0.850
0.800TYP.
7° REF.
Symbol
A
A1
b
b1
c
D
E
E1
e
θ
Dimensions In Inches
Min.
Max.
0.017
0.020
0.000
0.002
0.007
0.011
0.011
0.015
0.003
0.006
0.045
0.049
0.045
0.049
0.030
0.033
0.031TYP.
7° REF.
SOT-723 Suggested Pad Layout
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4
E,Aug,2015
SOT-723 Tape and Reel
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E,Aug,2015
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