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MMBD4448HTW

MMBD4448HTW

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT363

  • 描述:

    SOT-363塑料封装二极管

  • 数据手册
  • 价格&库存
MMBD4448HTW 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes MMBD4448HAQW/HADW/HCDW/HSDW/HTW SOT-363 Switching Diode FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance Power Dissipation MMBD4448HA4W MMBD4448HADW MMBD4448HCDW MMBD4448HSDW MARKING:KA5 KA5 KA5 MARKING:KA6 MARKING:KA7 + - - + - - - + + - + + KA6 KA6 KA7 KA7 - - + - - + + + - + + - MARKING:KAB - + KAB + - - + KAB + - MMBD4448HTW MARKING: KAA - - - - - - KAA KAA + + + + + + Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 80 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW Thermal Resistance from Junction to Ambient RθJA 625 ℃ /W Storage Temperature TSTG -55 ~+150 ℃ www.cj-elec.com 1 D,Mar,2016 ELECTRICAL CHARACTERISTICS Electrical Ratings @Ta=25℃ Parameter Symbol Min V (BR) 80 VF1 0.62 Typ Max Unit Conditions V IR=100μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 100 nA VR=70V IR2 25 nA VR=20V Capacitance Between Terminals CT 3.5 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Reverse Breakdown Voltage Forward Voltage Reverse Current www.cj-elec.com 2 IF=IR=10mA Irr=0.1XIR,RL=100Ω D,Mar,2016 Typical Characteristics 100 1000 (nA) 10000 REVERSE CURRENT IR T= a 2 5℃ T= a 1 00 ℃ FORWARD CURRENT IF (mA) Forward Characteristics 500 10 1 0.0 0.2 0.4 0.6 0.8 1.2 1.0 FORWARD VOLTAGE 1.4 Ta=25℃ 10 20 0 VF (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.1 Ta=100℃ 100 1 1.6 Reverse Characteristics 250 Ta=25℃ 200 PD (mW) 1.0 0.9 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 0.8 0.7 0.6 0 4 8 12 REVERSE VOLTAGE www.cj-elec.com 16 VR 150 100 50 0 20 (V) 0 25 50 75 AMBIENT TEMPERATURE 3 100 125 150 Ta (℃) D,Mar,2016 SOT-363 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 4 D,Mar,2016 SOT-363 Tape and Reel www.cj-elec.com 5 D,Mar,2016
MMBD4448HTW 价格&库存

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MMBD4448HTW
  •  国内价格
  • 1+0.19535
  • 100+0.18233
  • 300+0.16931
  • 500+0.15628
  • 2000+0.14977
  • 5000+0.14586

库存:55