KDS160E

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. CATHODE MARK KDS160E SILICON EPITAXIAL PLANAR DIODE Small Package : ESC. C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm. ) SYMBOL VRM VR IFM IO IFSM PD* Tj Tstg RATING 85 80 300 100 2 150 150 -55 150 UNIT V V mA mA A mW 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC * : Mounted on a glass epoxy circuit board of 20 20mm, Marking Type Name UF ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 A pF nS V UNIT SYMBOL 2003. 11. 20 Revision No : 4 1/2 KDS160E I F - VF 10 FORWARD CURRENT I F (mA) 10 10 C Ta =2 Ta 5 C =-2 5 C 0 3 I R - VR 10 REVERSE CURRENT I R (µA) Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr 100 50 30 - IF Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2003. 11. 20 Revision No : 4 50Ω 2/2