KDV386S

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =1.8 (Min.) Low Series Resistance. : rS=0.9 Good C-V Linearity. 2 L KDV386S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E B L (Max.) 3 DIM A D B C D E G H J MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) P P K L M N P SYMBOL VR Tj Tstg RATING 15 150 -55 150 UNIT C N V K M J 3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name VB ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current IR2 C1V Capacitance C4V Capacitance Ratio Series Resistance C1V/C4V rS VR=4V, f=1MHz VR=5V, f=470MHz 18.5 1.8 25.5 0.9 VR=15V, Ta=60 VR=1V, f=1MHz 43.0 100 49.0 pF SYMBOL IR1 VR=15V TEST CONDITION MIN. TYP. MAX. 10 nA UNIT 2007. 10. 31 Revision No : 0 1/2 KDV386S IR - VR TOTAL CAPACITANCE CT (pF) 10 -10 CT - VR 60 f=1MHz REVERSE CURRENT IR (A) 50 40 30 20 10 0 0.5 10 -11 10 -12 10 -13 10 -14 0 5 10 15 1.0 10 30 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) rs - VR 1.0 0 ∆(LOG CT ) / ∆(LOG VR ) - VR SERIES RESISTANCE rs (Ω) 0.8 0.6 0.4 0.2 0 0.5 1.0 10 30 ∆(LOG CT ) / ∆(LOG VR ) f=470MHz -0.5 -1.0 -1.5 -2.0 0.5 1.0 10 30 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2007. 10. 31 Revision No : 0 2/2