KTA1042

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTC2022D/L. Q A C KTA1042D/L EPITAXIAL PLANAR PNP TRANSISTOR I J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -5 -0.5 20 150 -55 150 UNIT V V V A A W H F 1 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.20 2.00 + _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range A C I J D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E B IPAK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification O:70~140, ) TEST CONDITION VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-1A VCE=-5V, IC=-4A IC=-4A, IB=-0.4A VCE=-5V, IC=-4A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz MIN. -100 70 20 TYP. 30 270 MAX. -100 -1 240 -2.0 -1.5 V V MHz pF UNIT A mA V ICBO IEBO V(BR)CEO SYMBOL hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob Y:120~240. 2003. 3. 27 Revision No : 3 1/2 KTA1042D/L I C - V CE -250 -200 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2 1 -0.5 -0.3 = Tc 75 C COMMON EMITTER I C /I B =10 -5 COLLECTOR CURRENT I C (A) -4 -3 -2 -1 0 -150 -100 -50 IB =-20mA -0.1 -0.05 -0.03 -0.01 -0.03 -0.1 -0.3 COMMON EMITTER Tc=25 C Tc=25 C Tc=-25 C 0 0 -1 -2 -3 -4 -5 -6 -7 -1 -3 -5 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) h FE - I C 500 DC CURRENT GAIN hFE Tc=75 C Tc=25 C SAFE OPERATING AREA -20 COLLECTOR CURRENT I C (A) -10 -5 -3 I C MAX(PULSED) * I C MAX (CONTINUOUS) DC 300 s* 1m * ms 10 s * 0m 10 100 Tc=-25 C 1s * 50 30 COMMON EMITTER VCE =-5V -1 -0.5 -0.3 O Tc PER =2 A 5 TIO C N 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -5 -0.1 -3 COLLECTOR CURRENT I C (A) * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -10 -30 -100 VCEO MAX. -200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 24 20 16 12 8 4 2 1 1 Tc=25 C 2 Ta=25 C 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 3 2/2