BAP70-02

S MD Type Silicon PIN diode BAP70-02 Diodes SOD-523 +0.05 0.3-0.05 +0.1 1.2-0.1 Unit: mm +0.1 0.6-0.1 High voltage, current controlled RF resistor for attenuators Low diode capacitance Very low series inductance. 0.07max +0.05 0.1-0.02 +0.1 1.6-0.1 +0.05 0.8-0.05 Features + - 0.77max Absolute Maxim um Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point Ts = 90 Symbol VR IF P tot T stg Tj R th j-s -65 -65 Min Max 50 100 415 +150 +150 145 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter forward voltage reverse leakage current Symbol VF IR Conditions IF = 50 mA V R =50 V V R = 0; f = 1 MHz diode capacitance Cd V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz V R = 20 V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 charge carrier life time series inductance Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. when switched from IF = 10 mA to IR = 6 mA; L Typ 0.9 Max 1.1 20 Unit V nA 570 400 270 200 77 40 5.4 1.4 1.25 0.6 250 100 50 7 1.9 s nH fF R L = 100 LS ,measured at IR = 3 mA IF = 100 mA; f = 100 MHz Marking Marking K8 www.kexin.com.cn 1