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LT5554IUH#TRPBF

LT5554IUH#TRPBF

  • 厂商:

    LINEAR(凌力尔特)

  • 封装:

    WFQFN32_EP

  • 描述:

    IC VGA DIG CONTROL 32-QFN

  • 数据手册
  • 价格&库存
LT5554IUH#TRPBF 数据手册
LT5554 Broadband Ultra Low Distortion 7-Bit Digitally Controlled VGA DESCRIPTION FEATURES n n n n n n n n n n n 1GHz Bandwidth at all Gains 48dBm OIP3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω –88dBc IMD3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω 1.4nV/√Hz Input-Referred-Noise (RTI) 20dBm Output P1dB at 70MHz, ROUT = 130Ω 2dB to 18dB Gain Range (ROUT = 50Ω) 0.125dB Gain Step Size 30ps Group Delay Variation 5ns Fast Gain Settling Time 5ns Fast Overdrive Recovery –80dB Reverse Isolation The LT®5554 is a 7-bit digitally controlled programmable gain (PG) amplifier with 16dB gain control range. It consists of a 50Ω input variable attenuator, followed by a high linearity variable transconductance amplifier. The coarse 4dB input attenuator step is implemented via 2-bits of digital control (PG5, PG6). The fine transconductance amplifier 0.125dB step within 3.875dB gain control range is set via 5-bits digital control (PG0 to PG4). The LT5554 gain control inputs (PGx) and the STROBE input can be directly coupled to TTL or ECL drivers. The seven parallel gain control inputs time skew can be eliminated by using the STROBE input positive transition. The internal output resistor RO = 400Ω limits the maximum overall gain to 36dB for open outputs. The internal circuitry of open output collectors enables the LT5554 to be unconditionally stable over any loading conditions (including external SAW filters) and provides –80dB reverse isolation at 300MHz. APPLICATIONS n n n n n Differential ADC Driver IF Sampling Receivers VGA IF Power Amplifier 50Ω Driver Instrumentation The LT5554 is internally protected during overdrive and has an on-chip power supply regulator. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. With 0.125dB step resolution and 5ns settling time, the LT5554 is suitable in applications where continuous gain control is required. TYPICAL APPLICATION OIP3 and SFDR vs Frequency 132 VCC MODE IF BPF RF INPUT DEC IN– LO – 0.1μF CDEC 0.1μF LT5554 BPF ADC + 7 BITS PGx GAIN CONTROL 130 46 OIP3 OIP3 (dBm) IN+ SFDR (dBm/Hz) 0.1μF IF AMPLIFIER 49 ROUT = 50Ω 5V 128 43 5554 TA01 SFDR STROBE 126 0 50 100 150 FREQUENCY (MHz) 40 200 5554 TA01b 5554f 1 LT5554 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Notes 1, 2) GND GND PG4 GND PG3 PG2 PG1 GND TOP VIEW Supply Voltage VCC..........................................................................6V Pin Voltages and Currents OUT+, OUT– ............................................................7V STROBE, PGx..........................................–0.5V to VCC ENB, MODE.............................................–0.5V to VCC IN+, IN–, DEC ........................................... –0.5V to 4V Operating Ambient Temperature Range LT5554 ............................................... –40°C to +85°C Junction Temperature ........................................... 125°C Storage Temperature Range................. –65°C to +150°C 32 31 30 29 28 27 26 25 GND 1 24 VCC GND 2 23 ENB DEC 3 22 GND IN+ 4 IN– 5 DEC 6 19 GND GND 7 18 MODE GND 8 17 VCC 21 OUT– 33 20 OUT+ GND GND STROBE GND PG0 PG6 PG5 GND 9 10 11 12 13 14 15 16 UH PACKAGE 32-LEAD (5mm s 5mm) PLASTIC QFN TJMAX = 150°C, θJA = 34°C/W, θJC = 3°C/W EXPOSED PAD (PIN 33) IS GND, MUST BE SOLDERED TO PCB ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LT5554IUH#PBF LT5554IUH#TRPBF 5554 32-Lead (5mm × 5mm) Plastic QFN –40°C to 85°C Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ 5554f 2 LT5554 AC ELECTRICAL CHARACTERISTICS (ROUT = 50Ω) Specifications are at TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 2.2V, VIH = 2.2V, VIL = 0.6V, maximum gain (Notes 3, 6), (Test circuits shown in Figure 16), unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Dynamic Performance BW Large Signal –3dB Bandwidth All Gain Settings (Note 7) LF – 1000 MHz OP1dB Output 1dB Compression Point All Gain Settings, ROUT = 130Ω, 70MHz 20 dBm GM Amplifier Transconductance at GMAX FIN = 100MHz 0.15 S CMRR Common Mode Gain to Single-Ended Output FIN = 100MHz, Figure 19 –6 dB S12 Reverse Isolation FIN = 100MHz FIN = 400MHz –86 –78 dB dB Overdrive Recovery Time 5ns Input Pulse, VOUT within ±10% 5 ns Noise/Linearity Performance Two Tones, POUT = 4dBm/Tone (2VP-P into 50Ω), Δf = 200kHz IIP3 Input Third Order Intercept Point GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 27 30 dBm dBm OIP3 Output Third Order Intercept Point for Max-Gain FIN = 100MHz FIN = 200MHz 45 46 dBm dBm IMD3 Intermodulation Product for Max-Gain FIN = 100MHz FIN = 200MHz –82 –84 dBc dBc OIP3 Output Third Order Intercept Point for –3.875dB STEP FIN = 100MHz FIN = 200MHz 44 40 dBm dBm OIP3 Output Third Order Intercept Point GMAX, F1 = 88MHz, F2 = 112MHz GMAX –3.875dB, F1 = 88MHz, F2 = 112MHz 47 44 dBm dBm HD3 Third Harmonic Distortion Pout = 10dBm, FIN = 100MHz, GMAX –62 dBc VONOISE Output Noise Noise Spectral Density GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 10.7 7.3 nV/√Hz nV/√Hz NF Noise Figure GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 10 10.5 dB dB RTI Input Referred Noise Spectral Density (RMS) (Note 5) GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 1.34 1.42 nV/√Hz nV/√Hz SFDR Spurious Free Dynamic Range in 1Hz BW. GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 128 129 dBm/Hz dBm/Hz 40.5 38 Amplifier Voltage Gain and Gain Step GMAX Maximum Voltage and Power Gain FIN = 112MHz 15.3 17.6 19.7 dB GMIN Minimum Voltage and Power Gain FIN = 100MHz 1.725 GSTEP Gain Step Size (Note 9) Except For –4dB, –8dB, –12dB Steps For –4dB, –8dB, –12dB Steps 0.125 0.25 0.35 dB dB GDERROR Group Delay Step Accuracy FIN = 100MHz 10 ps 43 47 Ω Ω dB AMPLIFIER I/O Differential IMPEDANCE RIN Input Resistance FIN = 100MHz, GMAX to GMAX –3.875dB FIN = 100MHz, GMAX –4dB to GMIN CIN Input Capacitance FIN = 100MHz 2.8 pF RO Output Resistance FIN = 100MHz 400 Ω CO Output Capacitance FIN = 100MHz 1.9 pF 5554f 3 LT5554 AC ELECTRICAL CHARACTERISTICS (ROUT = 100Ω) Specifications are at TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 2.2V, VIH = 2.2V, VIL = 0.6V, maximum gain (Notes 3, 8), (Test circuits shown in Figure 16), unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Noise/Linearity Performance Two Tones, POUT = 4dBm/Tone (2VP-P into 50Ω), Δf = 200kHz IIP3 Input Third Order Intercept Point GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 27 27 dBm dBm OIP3 Output Third Order Intercept Point for Max-Gain FIN = 100MHz FIN = 200MHz 48 48 dBm dBm IMD3 Intermodulation Product for Max-Gain FIN = 100MHz FIN = 200MHz –88 –88 dBc dBc VONOISE Output Noise Noise Spectral Density GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 21.4 14.5 nV/√Hz nV/√Hz NF Noise Figure GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 10 10.5 dB dB RTI Input Referred Noise Spectral Density (RMS) (Note 5) GMAX, FIN = 200MHz GMAX –3.875dB, FIN = 200MHz 1.34 1.42 nV/√Hz nV/√Hz SFDR Spurious Free Dynamic Range in 1Hz BW. GMAX, FIN = 200MHz 128 dBm/Hz GVMAX Maximum Voltage Gain FIN = 100MHz 23.6 dB GPMAX Maximum Power Gain FIN = 100MHz 20.6 dB AC ELECTRICAL CHARACTERISTICS (Timing Diagram) (ROUT = 50Ω) Specifications are at TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V, maximum gain (Test circuit shown in Figure 16), unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT PGx and Strobe Timing Characteristics TSU Setup Time PGx vs STROBE 0 ns THOLD Hold Time PGx vs STROBE 1 ns TPW STROBE Pulse Width 2 ns TR STROBE Period 4 ns TLATENCY Latency Time of the Previous Gain State Output Settles within 1% 4 ns TGLITCH Time Between Previous Stable Gain State to Next Stable State Output Settles within 1% 5 ns AGLITCH Max Glitch Amplitude VIN = 0 (No Signal or STROBE Transition During Output Signal Zero Crossing) 1 mV STROBE Transition when Output Power is at Peak + 10dBm Power 3 dB 5554f 4 LT5554 AC ELECTRICAL CHARACTERISTICS (Timing Diagram) Timing Diagram PG0, 1, 2, 3, 4, 5, 6 INPUTS TSU THOLD STROBE INPUTS DATA TRANSPARENT TPW DATA LATCH TGLITCH TLATENCY OUT SIGNAL STATE (i) STATE (i + 1) STATE (i + 2) 5554 TD01 DC ELECTRICAL CHARACTERISTICS Specifications are at TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, unless otherwise noted. (Note 3) (Test circuit shown in Figure 16), unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT 4.75 5 5.25 V 5 6 V 2 2.15 Normal Operating Conditions VCC Supply Voltage VCCO OUT+, OUT– Output Pin DC Common Mode (Note 4) Voltage Shutdown DC Characteristics, ENB = 0.6V VIN(BIAS) DEC, IN+, IN– Bias Voltage IIL(PG) PGx, STR Input Current VIN = 0.6V IIH(PG) PGx, STR Input Current VIN = 5V IOUT OUT+, OUT– Current ICC VCC Supply Current V 0 μA 210 μA 4 20 μA 5.1 mA 0.6 V VCC V 20 μA Enable Input DC Characteristics VIL(EN) ENB Input LOW Voltage Disable VIH(EN) ENB Input HIGH Voltage Enable 3 IIL(EN) ENB Input Current VIN = 0.6V IIH(EN) ENB Input Current VIN = 3V 70 IIH(EN) ENB Input Current VIN = 5V 220 μA 300 μA 5554f 5 LT5554 DC ELECTRICAL CHARACTERISTICS Specifications are at TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, unless otherwise noted. (Note 3) (Test circuit shown in Figure 16), unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT DEC External Capacitor Charge/Discharge CURRENT IIH(DEC) DEC Pin Source Current VDEC = 4V 27 50 70 mA IIL(DEC) DEC Pin Sink Current VDEC = 1.8V –70 –38 –14 mA 0.6 V 2.3 V Mode Input Three-State DC Characteristics VIL(MODE) MODE Input LOW Voltage for AC-Couple PGx AC-Coupled, STROBE AC-Coupled 0 VOPEN(MODE) MODE Input OPEN PGx AC-Coupled, STROBE DC-Coupled 1.7 OPEN VIH(MODE) MODE Input HIGH Voltage PGx DC-Coupled, STROBE DC-Coupled VCC – 0.4 VCC IIL(MODE) MODE Input Current VMODE = 0V –42 –31 –23 μA V IIH(MODE) MODE Input Current VMODE = 5V 43 72 100 μA 0.6 V 30 μA 220 μA 4.6 V PGx (MODE = VCC) and STROBE (MODE = OPEN or MODE = VCC) INPUTS for DC-Coupled VIL Input LOW Voltage VIH Input HIGH Voltage IIL(DC) Input Current VIN = 0.6V IIH(DC) Input Current VIN = 5V 2.2 125 V 170 PGx (MODE = 0V or MODE = OPEN) and STROBE (MODE = 0V) INPUTS for AC-Coupled VIN(AC) Input Pulse Range Instantaneous Input Voltage 0 VIN(AC)P-P Input Pulse Amplitude Rise and Fall Time 80ns VIN(AC)MAX Maximum Input Noise Amplitude No LT5554 Gain Update IIL(AC) Input Current VIN = 0V –210 –155 –100 μA IIH(AC) Input Current VIN = 5V 310 420 530 μA V 600 300 mVP-P mVP-P 100 mVP-P Amplifier DC Characteristics VIN(DEC) DEC GMAX 1.85 2 2.25 VIN(BIAS) IN+, IN– Bias Voltage GMAX 1.8 2.04 2.2 RIN INPUT Differential Resistance GMAX GMIN GM Amplifier Transconductance GMAX IODC OUT+, OUT– Quiescent Current VOUT = 5V IOUT(OFFSET) Output Current Mismatch IN+, IN– Open ICC VCC Supply Current GMAX, MODE = 0V GMIN, MODE = 0V GMAX, MODE = 5V GMIN, MODE = 5V ICC(TOTAL) Total Supply Current ICC + 2 • IODC (GMAX) Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All voltage values are with respect to GND ground. Note 3: RS = RIN = 50Ω Input matching is assumed. PIN is the available input power. POUT is the power into ROUT. ROUT = RO || RLOAD is the total output resistance at amplifier open-collectors outputs (used in GV, GP gain calculation). RO = 400Ω is LT5554 internal output impedance. RLOAD is 48 50 0.15 33 47 78 77 75 75 110 109 106 106 S 57 mA 132 131 127 127 mA mA mA mA 200 200 V Ω Ω μA mA load resistance as seen at OUT+, OUT– pins. All dBm figures are with respect to 50Ω. Specifications refer to differential inputs and differential outputs. Note 4: An external power supply equal to VCCO is used for choke inductors or center-tap transformer output interfaces. Whenever OUT+, OUT– pins are biased via resistors, the voltage drop produced by the DCoutput current (IODC = 45mA typical) may require a larger output external power supply. However, care must be taken not to exceed the OUT+, OUT– absolute maximum rating when the LT5554 is disabled. 5554f 6 LT5554 ELECTRICAL CHARACTERISTICS Note 5: RTI (Referred-To-Input) stands for the total input-referred noise voltage source. RTI is close to output noise voltage divided by voltage gain (the exact equation is given in Definition of Specification section). The equivalent noise source eN is twice the RTI value. Note 6: The external loading at LT5554 OUT+/OUT– pins is RLOAD = 57Ω. ROUT = RLOAD || RO = 50Ω. Note 7: The IN+, IN–, DEC pins are internally biased. The time-constant of input coupling capacitor sets the low frequency corner (LF) at input. The output coupling capacitors or the transformer sets the low frequency corner (LF) at the output. The LT5554 operates internally down to DC. Note 8: The external loading at OUT+/OUT– pins is RLOAD = 133Ω. ROUT = RLOAD || RO = 100Ω. Note 9: Depending on the actual input matching conditions and frequency of operation, the LT5554 steps involving the input attenuator tap change may show less than 0.125dB change. These steps are GMAX –4dB, GMAX –8dB, GMAX –12dB, and the code is given in the Programmable Gain Table. The LT5554 monotonic operation for 0.125dB step resolution can still be obtained by skipping any such code with a gain error excedding 0.125dB. TYPICAL PERFORMANCE CHARACTERISTICS (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16), unless otherwise noted. Gain vs Frequency for 0.5dB Steps, Figure 17 Differential Gain Error vs Frequency at –40°C 20 Differential Gain Error vs Frequency at 85°C 0.3 0.3 0.2 0.2 18 16 12dB 12 10 8 6 12dB 0.1 GAIN ERROR (dB) GAIN ERROR (dB) GAIN (dB) 14 4dB 8dB 0 –0.1 4 0.1 4dB 8dB 0 –0.1 2 0 –0.2 0 100 200 300 400 500 600 700 800 900 1000 FREQUENCY (MHz) 50 75 100 125 150 FREQUENCY (MHz) 5554 G01 –0.1 –0.2 0.3 0.1 0 –0.1 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G04 100 125 150 FREQUENCY (MHz) –0.2 175 200 –40°C 25°C 85°C 0.2 GAIN ERROR (dB) 0 75 Differential Gain Error vs Attenuation at 200MHz –40°C 25°C 85°C 0.2 GAIN ERROR (dB) GAIN ERROR (dB) 0.3 0.1 50 5554 G03 Differential Gain Error vs Attenuation at 100MHz –40°C 25°C 85°C 0.2 –0.2 200 5554 G02 Differential Gain Error vs Attenuation at 50MHz 0.3 175 0.1 0 –0.1 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G05 –0.2 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G06 5554f 7 LT5554 TYPICAL PERFORMANCE CHARACTERISTICS (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16), unless otherwise noted. Integral Gain Error vs Attenuation at 50MHz 0.2 0.1 0.1 0.1 –4 –8 –12 ATTENUATION (dB) –0.1 –16 0 0 –4 –8 –12 ATTENUATION (dB) 5554 G07 24 200MHz 17.4 17.2 –20 0 20 40 60 TEMPERATURE (°C) –8 –12 ATTENUATION (dB) –16 8 0 8 0 –8 –16 –35 80 70MHz 140MHz 200MHz 16 –8 17.0 –40 –4 POUT vs PIN at GMAX – 3.875dB 24 POUT (dBm) POUT (dBm) 100MHz 0 5554 G09 70MHz 140MHz 200MHz 16 50MHz 17.6 –0.1 POUT vs PIN at Maximum Gain Maximum Gain vs Temperature 17.8 –16 5554 G08 18.0 GMAX (dB) 0.2 0 0 –40°C 25°C 85°C 0.3 0.2 0 –0.1 0.4 –40°C 25°C 85°C 0.3 GAIN ERROR (dB) 0.3 GAIN ERROR (dB) 0.4 –40°C 25°C 85°C Integral Gain Error vs Attenuation at 200MHz GAIN ERROR (dB) 0.4 Integral Gain Error vs Attenuation at 100MHz –25 –15 –5 PIN (dBm) 5 5554 G10 –16 –35 15 –25 –15 –5 PIN (dBm) 5554 G11 5 15 5554 G12 (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16) POUT = 4dBm/tone (2VP-P into 50Ω), Δf = 200kHz, unless otherwise noted. Two-Tone OIP3 vs Frequency at Max Gain, Three Temperatures Two-Tone IMD3 vs Frequency at Max Gain, Three Temperatures 49 IIP3 vs Frequency at Max Gain, Three Temperatures –76 32 85°C 85°C –79 30 IMD3 (dBc) OIP3 (dBm) –40°C 25°C –40°C IIP3 (dBm) 25°C 46 –82 25°C 28 –40°C 43 –85 26 85°C 40 0 50 100 150 FREQUENCY (MHz) 200 5554 G13 –88 0 50 100 150 FREQUENCY (MHz) 200 5554 G14 24 0 50 100 150 FREQUENCY (MHz) 200 5554 G15 5554f 8 LT5554 TYPICAL PERFORMANCE CHARACTERISTICS (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16) POUT = 4dBm/tone (2VP-P into 50Ω), Δf = 200kHz, unless otherwise noted. Two-Tone OIP3 vs Frequency for GMAX and Critical Gain Steps Two-Tone IMD3 vs Frequency for GMAX and Critical Gain Steps 49 IIP3 vs Frequency for GMAX and GMAX –3.875dB 32 –70 GMAX – 3.875dB GMAX – 12dB –76 IMD3 (dBc) OIP3 (dBm) GMAX GMAX – 15.875dB 43 GMAX – 3.875dB –82 GMAX – 3.875dB IIP3 (dBm) 46 30 GMAX – 15.875dB GMAX GMAX 28 26 GMAX – 12dB 200 100 150 FREQUENCY (MHz) –88 24 50 200 100 150 FREQUENCY (MHz) 5554 G16 50 100 150 FREQUENCY (MHz) 200 5554 G18 5554 G17 Two-Tone IMD3 and OIP3 vs Attenuation at 50MHz Two-Tone IMD3 and OIP3 vs Attenuation at 70MHz –70 48 –70 –74 46 –74 46 –78 44 –78 44 48 OIP3 IMD3 IMD3 –82 –86 0 –4 –8 –12 ATTENUATION (dB) 42 –82 40 –16 –86 OIP3 (dBm) OIP3 (dBm) IMD3 (dBc) OIP3 IMD3 (dBc) 42 0 –4 –8 –12 ATTENUATION (dB) 5554 G19 40 –16 5554 G20 Two-Tone IMD3 and OIP3 vs Attenuation at 100MHz Two-Tone IMD3 and OIP3 vs Attenuation at 140MHz –70 48 –70 48 OIP3 –74 46 OIP3 –82 42 –74 46 –78 44 –82 42 IMD3 –86 0 –4 –8 –12 ATTENUATION (dB) OIP3 (dBm) 44 OIP3 (dBm) –78 IMD3 (dBc) 50 IMD3 (dBc) 40 IMD3 40 –16 5554 G21 –86 0 –4 –8 –12 ATTENUATION (dB) 40 –16 5554 G22 5554f 9 LT5554 TYPICAL PERFORMANCE CHARACTERISTICS (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16) POUT = 4dBm/tone (2VP-P into 50Ω), Δf = 200kHz, unless otherwise noted. Two-Tone IMD3 and OIP3 vs Attenuation at 200MHz Two-Tone OIP3 vs Tone Power at Max-Gain –70 48 Two-Tone OIP3 vs Tone Power at Min-Gain 47 47 44 44 IMD3 44 OIP3 (dBm) –78 OIP3 50MHz 70MHz 100MHz 140MHz 200MHz 42 0 –4 40 –16 –8 –12 ATTENUATION (dB) 38 50MHz 70MHz 100MHz 140MHz 200MHz 41 41 –82 –86 OIP3 (dBm) 46 OIP3 (dBm) IMD3 (dBc) –74 0 38 6 9 3 OUTPUT TONE POWER (dBm) 5554 G23 12 0 3 6 9 OUTPUT TONE POWER (dBm) 5554 G25 5554 G24 Two-Tone OIP3 vs ROUT, for GMAX Two-Tone OIP3 vs VCCO, for GMAX –3.875dB Two-Tone OIP3 vs VCCO, for GMAX 50 12 48 48 45 45 OIP3 (dBm) OIP3 (dBm) OIP3 (dBm) 48 42 42 46 44 25MHz 70MHz 140MHz 200MHz 50 75 ROUT (Ω) 100 39 36 2 3 4 5 OUTPUT COMMON MODE VOLTAGE (V) 6 36 25MHz 70MHz 140MHz 200MHz 2 3 4 5 OUTPUT COMMON MODE VOLTAGE (V) 5554 G28 5554 G52 Harmonic Distortion vs Attenuation, 50MHz, POUT = 10dBm, Figure 17 6 5554 G30 OIP3 vs Frequency for GMAX and GMIN, POUT = 10dBm 50 –70 –75 –80 45 HD3 –85 OIP3 (dBm) HARMONIC DISTORTION (dBc) 39 25MHz 70MHz 140MHz 200MHz –90 GMIN 40 –95 GMAX –100 HD5 –105 35 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G27 50 100 150 FREQUENCY (MHz) 200 5554 G29 5554f 10 LT5554 TYPICAL PERFORMANCE CHARACTERISTICS (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16) POUT = 4dBm/tone (2VP-P into 50Ω), Δf = 200kHz, unless otherwise noted. HD3 vs Frequency for GMAX and GMIN, POUT = 10dBm, Figure 17 HD5 vs Frequency for GMAX and GMIN, POUT = 10dBm, Figure 17 –70 –56 HARMONIC DISTORTION (dBc) HARMONIC DISTORTION (dBc) –50 GMAX –62 GMIN –68 –74 –80 50 100 150 FREQUENCY (MHz) –76 –82 GMIN –88 –94 –100 200 GMAX 50 100 150 FREQUENCY (MHz) 200 5554 G31 5554 G32 (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16), maximum gain, unless otherwise noted. HD3 and HD5 vs POUT for GMAX, Figure 17 –40 –50 20 15 HD3 HD5 –60 NF (dB) –55 15 GMAX –3.875 GMAX –3.875 HD3 NF (dB) HARMONIC DISTORTION (dBc) 20 70MHz 140MHz –45 Single-Ended Output NF vs Frequency, Figure 18 Noise Figure vs Frequency GMAX 10 GMAX 10 –65 –70 5 –75 –80 5 HD5 7 10 13 OUTPUT POWER (dBm) 0 16 0 200 400 600 FREQUENCY (MHz) 5554 G33 0 800 0 200 400 600 FREQUENCY (MHz) 5554 G34 Noise Figure vs Attenuation, 140MHz 5554 G35 Input Referred Noise vs Attenuation, 140MHz 25 800 Output Noise Density vs Attenuation, 140MHz 6 12 20 15 10 VONOISE (nV/√Hz) RTI (nV/√Hz) NF (dB) 9 4 2 3 5 0 6 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G36 0 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G37 0 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G38 5554f 11 LT5554 TYPICAL PERFORMANCE CHARACTERISTICS ( ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16), maximum gain, unless otherwise noted. Single-Ended Output Current vs Attenuation Total ICC Current vs Attenuation 98 215 85°C 208 96 CURRENT (mA) CURRENT (mA) –40°C 25°C 85°C 94 25°C 200 193 92 0 –4 –8 –12 ATTENUATION (dB) 185 –16 –40°C 0 –4 –8 –12 ATTENUATION (dB) 5554 G39 –16 5554 G40 ICC Shutdown Current vs VCC, ENB = 0.6V VIN(BIAS) vs Attenuation 5 2.2 85°C 4 VIN(BIAS) (V) CURRENT (mA) –40°C 3 25°C 2 –40°C 2.1 85°C 25°C 1 0 4.7 4.9 5.1 VCC (V) 5.3 5.5 5554 G41 2.0 0 –4 –8 –12 ATTENUATION (dB) –16 5554 G42 5554f 12 LT5554 TYPICAL PERFORMANCE CHARACTERISTICS (ROUT = 50Ω) TA = 25°C. VCC = 5V, VCCO = 5V, ENB = 3V, MODE = 5V, STROBE = 3V, VIH = 2.2V, VIL = 0.6V (Test circuit shown in Figure 16), maximum gain, unless otherwise noted. 2dB-Step Response (PG4) 120MHz Signal 8dB-Step Response (PG6) 120MHz Signal 0.1V/DIV 8dB-Step Response (PG6) 120MHz Pulse Signal 0.1V/DIV 10ns/DIV 0.2V/DIV 5554 G46 10ns/DIV 5554 G47 5ns/DIV MODE = HIGH MODE = HIGH MODE = HIGH 8dB-Step (PG6) 120MHz Pulse Signal for 8dB Overdrive 8dB-Step (PG6) 120MHz Sinusoidal Signal for 2dB Overdrive 8dB-Step (PG6) 120MHz Sinusoidal Signal for 8dB Overdrive 1V/DIV 1V/DIV 5ns/DIV MODE = HIGH 5554 G48 1V/DIV 5554 G49 5ns/DIV MODE = HIGH 5554 G50 10ns/DIV 5554 G51 MODE = HIGH PIN FUNCTIONS GND (Pins 1, 2, 7, 8, 10, 13, 15, 16, 19, 22, 25, 26, 28, 31): Ground Pins. DEC (Pins 3, 6): Decoupling Pin for the Internal DC Bias Voltage for the Differential Inputs, IN+ and IN–. It is also connected to the ‘virtual ground’ of the input resistive attenuator. Capacitive de-coupling to ground is recommended in order to preserve linearity performance when IN+, IN– inputs are driven with up to 3dB imbalance. IN+ (Pin 4): Positive Signal Input Pin with Internal DC Bias to 2V. IN– (Pin 5): Negative Signal Input Pin with Internal DC Bias to 2V. PG5 (Pin 9): 4dB Step Amplifier Programmable Gain Control Input Pin. Input levels are controlled by MODE pin. PG6 (Pin 11): 8dB Step Amplifier Programmable Gain Control Input Pin. Input levels are controlled by the MODE pin. PG0 (Pin 12): 0.125dB Step Amplifier Programmable Gain Control Input Pin. Input levels are controlled by MODE pin. STROBE (Pin 14): Strobe Pin for the Programmable Gain Control Inputs (PGx). With STROBE in Low-state, the Amplifier Gain is not changed by PGx state changes (latch mode). With STROBE in High-state, the Amplifier Gain is asynchronously set by PGx inputs transitions (transparent-mode). A positive STROBE transition updates the PGx state. Low-state and High-state depends on MODE pin level (Table1). VCC (Pins 17, 24): Power Supply Pins. These pins are internally connected together. MODE (Pin 18): PGx and STROBE Functionality and Level Control Pin. When MODE is higher than VCC – 0.4V, the PGx and STROBE are DC-coupled. When the MODE pin is lower than 0.6V, the PGx and STROBE are AC-coupled. 5554f 13 LT5554 PIN FUNCTIONS When the MODE pin is left open, the PGx inputs are ACcouple and the STROBE input is DC-coupled. When the ENB input voltage is less than or equal to 0.6V, the amplifier is turned off. In DC-coupled mode, the PGx and STROBE inputs levels are 0.6V and 2.2V. In AC-coupled mode, the PGx and STROBE inputs are driven with 0.6VP-P minimum amplitude (with rise and fall time 140Ω, in which case the instantaneous voltage at each OUT+ and OUT– outputs is either 8V. The internal 400Ω differential resistor (RO) sets the output impedance and the maximum voltage gain (GMAX) to 36dB when outputs OUT+, OUT– are open. The output OP1dB = 20dBm can be achieved when ROUT = 130Ω. In this case, the LT5554 outputs reach both current and voltage limiting for maximum output power. Figure 7 shows the Voltage and Power Gains as a function of ROUT, which is the total output loading at the open collector amplifier output including the internal resistor RO = 400Ω. VOLTAGE GAIN MAXIMUM GAIN (dB) 30 In addition, the STROBE input can be driven such that the LT5554 gain state is updated asynchronously (PGx latch control in transparent-mode) or controlled by positive STROBE transition (PGx latch control in strobed-mode). 24 POWER GAIN 12 There are several options available for coupling type and latch control which are given in the following tables: 6 0 The MODE pin selects the interface to the LT5554 gain control pins. The PGx and STROBE control inputs can be configured to be either DC-coupled (for TTL interface) or AC-coupled (for ECL or low-voltage CMOS interfaces). 36 18 Gain Control Interface 10 50 100 ROUT (Ω) 400 1000 5554 F07 Figure 7. Maximum Voltage and Power Gain vs ROUT The gain vs ROUT relationship is given by the following equations: GV = 20log(GM • ROUT) in dB GP = 10log(RIN • GM2 • ROUT) in dB Table1. MODE Input Options COUPLING TYPE MODE (State) STROBE PGx LOW AC Positive Transition AC Strobe OPEN DC >2.2V AC Transparent OPEN 0.6 to 2.2V AC Strobe HIGH DC >2.2V DC Transparent HIGH 0.6 to 2.2V DC Strobe PGx (Latch Control) Where RIN = 50Ω and GM = 0.15 siemens at GMAX For wide band applications, the amplifier bandwidth can be extended by inductive peaking technique. The inductor in series with the LT5554 outputs (OUT+ OUT–) can have a value up to some tens of nH depending on ROUT value and board capacitance. The current limiting will occur with ROUT 6V. If disabled, the VCCO will be applied at OUT+, OUT– exceeding the absolute maximum 6V limit with possible LT5554 failure. Figure 17 shows the evaluation board for wide-band characterization at ROUT = 50Ω, where the insertion loss of the output balun is about –1dB at 1GHz. Several ROUT options are given in Table 4 as well as the output padding insertion-loss and required VCCO for 5V on LT5554 outputs. The LT5554 output power at open collector outputs is: POUT = PWR(J3) + IL(T2) + 3dB + ILPAD J5, 40 PINS SMT-TB 1, 3, 5, 7 9 11 VCC VDEC ENB 13 15 17 R20 10k J1 50 21 R21 10k PG0 C4 0.1μF 19 23 25 R22 10k PG1 R23 10k PG2 R24 10k PG3 C8 0.1μF • RIN 50Ω • IN– ETC1-1-13 MACOM 29 R25 10k PG4 PG5 R5 28Ω LT5554 RO 400Ω R6 28Ω OUT+ ROUT = 50Ω 33, 35, 37, 38 MODE 2, 4, ...40 VCCO PG6 C9 0.1μF C18 0.1μF C19 4.7μF R3 15.4Ω OUT– C5 1μF 31 VPG R26 10k C3 0.1μF IN+ T1 1:1 27 PG0 PG1 PG2 PG3 PG4 PG5 PG6 STROBE J3 50 T2 1:1 50Ω MATCHING R4 15.4Ω RLOAD RO 400Ω 57.1Ω • • ETC1-1-13 5554 F17 VCC = 5V VCCO = 7V Figure 17. Single Ended Test Board (Simplified Schematic) 5554f 24 LT5554 APPLICATIONS INFORMATION J5, 40 PINS SMT-TB 1, 3, 5, 7 9 11 VCC VDEC ENB 13 15 17 R20 10k J1 50 21 R21 10k 23 R22 10k PG1 PG0 C4 0.1μF 19 25 27 R23 10k PG2 R24 10k PG3 PG4 C8 0.1μF • R5 66.5Ω LT5554 RO 400Ω IN– R6 66.5Ω OUT+ C5 1μF ETC1-1-13 MACOM R25 10k 33, 35, 37, 38 MODE 2, 4, ...40 VCCO R26 10k PG5 PG6 C9 0.1μF C18 0.1μF C19 4.7μF J3 50 OUT– RIN 50Ω • 31 VPG C3 0.1μF IN+ T1 1:1 29 PG0 PG1 PG2 PG3 PG4 PG5 PG6 STROBE ROUT = 50Ω RO 400Ω RLOAD 57Ω 100Ω MATCHING C10 47nF J33 50 C12 47nF 5554 F18 VCC = 5V VCCO = 8V ENB = 5V Figure 18. Wideband Differential Output Test Board (Simplified Schematic) Common mode characterization for the LT5554 was performed with input circuit shown in Figure 19. C1 47nF J1 50 25Ω IN+ 25Ω 25Ω DEC IN– CDEC 47nF OUT– – LT5554 + OUT+ 5554 F19 Figure 19. Common Mode Input Interface Timing characterization and AC-coupled gain control inputs are tested on evaluation board. The required circuit modifications are shown in the Figure 20 simplified schematic and detailed below for PG6 (8dB step). The PG6 pulse source is applied at J6 connector and 50Ω terminated by R16 and R33 resistors. C66 decouple R33 to ground while C16 provides DC-decoupling between referenced to ground pulse source and the PG6 DC-voltage. A supply connected to PG6 turret will set the PG6 DC-voltage in 0V to 5V range. All other (untested) PGx DC-voltage can be independently be applied at VPG turret decoupled by C88. Strobe-mode operation is tested with a pulse source applied at J7 connector as shown in Figure 20. Applying similar modifications around J2 and J4 connectors shown in Figure 21, other PGx inputs can be evaluated. As described in Table 1 and Table 2, the MODE pin will select the desired state. 5554f 25 LT5554 APPLICATIONS INFORMATION R22 10k R21 10k R23 10k PG1 PG2 PG4 PG3 R28 0Ω R29 0Ω 32 R8 0Ω 1 2 3 30 29 R31 0Ω 28 27 25 GND GND GND ENB DEC GND IN+ – 8 26 PG4 VCC 5 7 C4 0.1μF GND 4 6 LT5554 IN 24 21 + 20 DEC GND GND MODE GND VCC ENABLE 22 OUT – OUT VCC 23 19 18 17 C8 0.1μF PG5 GND PG6 PG0 GND STROBE GND GND C5 1μF R16 100Ω 31 R30 0Ω PG1 GND PG2 PG3 GND VDEC VPG C88 47nF R24 10k 9 C16 47nF 10 R32 0Ω 11 12 R33 100Ω 13 14 15 R27 R34 0Ω 100Ω C17 47nF 16 MODE C6 47nF R17 100Ω J6 J7 PG5 R25 10k PG6 C27 47nF PG0 C28 47nF R26 10k R20 10k 5554 F20 STROBE Figure 20. Timing Test for PG6 and STROBE (Simplified Schematic) Evaluation Board Figure 21 shows the schematic of the LT5554 evaluation board. Transformer T2 is TC2-1T and resistor R5 + R6 = 134Ω (ROUT = 50Ω GP(J3) = 13.2dB). The silkscreen and layout are shown in Figures 22 through Figure 27. The board control J5 edge connector (40PINS SMT-TB) allows easy access to LT5554 component pins. Alternatively or combined with J5, 14 test points (turrets) for signals and two for GND are also available. The board is powered with a single supply in 4.75V to 5.25V at VCC and VCCO (either J5 connector or turrets). Connecting the ENABLE pin to VCC supply enables the LT5554 part. PGx gain control and STROBE inputs will have TTL levels (DC-coupled) when MODE = 5V (same power supply). To set LT5554 for maximum gain (GMAX) in transparent-mode, all seven PGx and STROBE can be connected to 5V supply. Alternatively, a 2.2V power supply at VPG pin and STROBE turret will set same GMAX state. J1 (input) and J3 (output) are the default board signal ports for evaluation with 50Ω single ended test system. For differential evaluation, the board J11 and J33 connectors must be reconfigured. 5554f 26 LT5554 APPLICATIONS INFORMATION 2 4 6 8 10 12 14 VCC VCC VCC VCC VDEC ENB 1 3 5 7 9 11 16 20 22 24 26 28 30 32 34 PG0 PG1 PG2 PG3 PG4 PG5 PG6 STROBE VPG MODE 13 VDEC ENB 18 15 17 19 21 23 25 27 29 31 36 35 C11 47nF R20 10k C14 47nF R31 0Ω R28 0Ω NOT MOUNTED J4 PG2 PG3 NOT MOUNTED C12 47nF NOT MOUNTED R12 NOT MOUNTED R8 0Ω VDEC NOT MOUNTED T1 1:1 26 PG4 24 OUT– 21 5 IN– OUT+ 20 GND MODE GND VCC 10 11 12 13 14 15 ENABLE R33 0Ω C16 47nF NOT MOUNTED R27 0Ω PG6 PG0 R34 0Ω STROBE C17 47nF C25 0.1μF R3 0Ω PG5 PG6 C27 0.1μF C26 0.1μF T2 – TC2-1T OUT 2:1 • • R7 NC OUT+ 18 MODE C6 47nF 17 C8 0.1μF R4 0Ω J33 MINICIRCUITS R6 681Ω C9 0.1μF J3 • 19 16 NOT MOUNTED NOT MOUNTED PG4 R26 10k R5 68.1Ω 22 PG5 GND PG6 PG0 GND STROBE GND GND 9 C24 0.1μF R25 10k C19 4.7μF VCC 23 IN+ GND C23 0.1μF PG3 C3 0.1μF C4 VCC DEC C22 0.1μF PG2 R24 10k VCCO GND GND GND LT5554 PG1 R23 10k C21 THROUGH C27 ARE NOT MOUNTED 25 4 C5 1μF NOT MOUNTED 27 ENB 8 R16 28 GND 7 NOT MOUNTED 29 DEC 6 ETC1-1-13 MACOM 30 R22 10k R14 GND 3 • 31 PG0 NOT MOUNTED NOT MOUNTED PG1 GND PG2 PG3 GND 1 2 R1 0Ω C13 47nF R21 10k C21 0.1μF NOT MOUNTED R30 0Ω R29 0Ω 32 J11 39 VPG PG4 J2 IN– 37 VCCO NOT MOUNTED • J5, 40 PINS SMT-TB PG0 PG1 PG2 PG3 PG4 PG5 PG6 STROBE VPG MODE PG1 IN+ 40 VCCO VCCO VCCO VCCO 33 VCC J1 38 C18 0.1μF R2 0Ω NOT MOUNTED 5554 F21 R17 NOT MOUNTED NOT MOUNTED J7 J6 C15 47nF R32 0Ω PG5 Figure 21. Evaluation Circuit Schematic 5554f 27 LT5554 APPLICATIONS INFORMATION Figure 22. Top Side Figure 23. Inner Layer 2 GND 5554f 28 LT5554 APPLICATIONS INFORMATION Figure 24. Inner Layer 3 Power Figure 25. Bottom Side 5554f 29 LT5554 APPLICATIONS INFORMATION Figure 26. Silkscreen Top Figure 27. Silkscreen Bottom 5554f 30 LT5554 PACKAGE DESCRIPTION UH Package 32-Lead Plastic QFN (5mm × 5mm) (Reference LTC DWG # 05-08-1693 Rev D) 0.70 ±0.05 5.50 ±0.05 4.10 ±0.05 3.50 REF (4 SIDES) 3.45 ± 0.05 3.45 ± 0.05 PACKAGE OUTLINE 0.25 ± 0.05 0.50 BSC RECOMMENDED SOLDER PAD LAYOUT APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 5.00 ± 0.10 (4 SIDES) BOTTOM VIEW—EXPOSED PAD 0.75 ± 0.05 R = 0.05 TYP 0.00 – 0.05 PIN 1 NOTCH R = 0.30 TYP OR 0.35 × 45° CHAMFER R = 0.115 TYP 31 32 0.40 ± 0.10 PIN 1 TOP MARK (NOTE 6) 1 2 3.50 REF (4-SIDES) 3.45 ± 0.10 3.45 ± 0.10 (UH32) QFN 0406 REV D 0.200 REF NOTE: 1. DRAWING PROPOSED TO BE A JEDEC PACKAGE OUTLINE M0-220 VARIATION WHHD-(X) (TO BE APPROVED) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.25 ± 0.05 0.50 BSC 5554f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 31 LT5554 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5514 Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain 850MHz Bandwidth, 47 dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5518 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching, Single-Ended LO and RF Ports Operation LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching, Single-Ended LO and RF Ports Operation LT5521 10MHz to 3700MHz High Linearity Upconverting Mixer 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation LT5522 600 MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports LT5524 Low Power, Low Distortion ADC Driver with Digitally Programmable Gain 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control LT5525 High Linearity, Low Power Downconverting Mixer Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, ICC = 28A LT5526 High Linearity, Low Power Downconverting Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, –65dBm LO-RF Leakage LT5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA, Conversion Gain = 2dB LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz LT5557 400MHz to 3.8GHz, 3.3V High Signal Level Downconverting Mixer IIP3 = 23.7dBm at 2600MHz, 23.5dBm at 3600MHz, ICC = 82A at 3.3V LT5560 Ultra-Low Power Active Mixer 10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter. LT5568 700MHz to 1050MHz High Linearity Direct Quadrature Modulator 22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz LT5572 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator 21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz LT5575 800MHz to 2.7GHz High Linearity Direct Conversion I/Q Demodulator 50Ω, Single-Ended RF and LO Inputs. 28dBm IIP3 at 900MHz, 13.2dBm P1dB, 0.04dB I/Q Gain Mismatch, 0.4° I/Q Phase Mismatch LT5579 1.5GHz to 3.8GHz High Linearity Upconverting Mixer 27.3dBm OIP3 at 2.14GHz, 9.9dB Noise Floor, 2.6dB Conversion Gain, –35dBm LO Leakage RF Power Detectors LTC®5505 RF Power Detectors with >40dB Dynamic Range LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7 to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Gain LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Offset LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset LT5534 50MHz to 3GHz Log RF Power Detector with 60dB Dynamic Range ±1dB Output Variation over Temperature, 38ns Response Time, Log Linear Response LTC5536 Precision 600Mhz to 7GHz RF Power Detector with Fast Comparator Output 25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to 12dBm Input Range LT5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 1GHz, 83dB Log Linear Dynamic Range LT5538 3.8GHz Wide Dynamic Range Log Detector 75dB Dynamic Range, ±1dB Output Variation Over Temperature LT5570 2.7GHz RMS Power Detector Fast Responding, up to 60dB Dynamic Range, ±0.3dB Accuracy Over Temperature 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 5554f 32 Linear Technology Corporation LT 0708 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2008
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