LTC1155CS8#TR

LTC1155 Dual High Side Micropower MOSFET Driver FEATURES DESCRIPTION Fully Enhances N-Channel Power MOSFETs n 8µA Standby Current n 85µA ON Current n Short-Circuit Protection n Wide Power Supply Range: 4.5V to 18V n Controlled Switching ON and OFF Times n No External Charge Pump Components n Replaces P-Channel High Side MOSFETs n Compatible with Standard Logic Families n Available in 8-Pin SO Package The LTC®1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8µA standby current and 85µA operating current, allows use in virtually all systems with maximum efficiency. n APPLICATIONS Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps. n n n n n n The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages. n The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required. Laptop Power Bus Switching SCSI Termination Power Switching Cellular Phone Power Management P-Channel Switch Replacement Relay and Solenoid Drivers Low Frequency Half H-Bridge Motor Speed and Torque Control All registered trademarks and trademarks are the property of their respective owners. TYPICAL APPLICATION Laptop Computer Power Bus Switch with Short-Circuit Protection VS = 4.5V TO 5.5V *IRLR034 5A MAX TTL, CMOS INPUT DS1 VS DS2 G1 LTC1155 G2 IN1 GND IN2 10µF CDLY 0.1µF RDLY 100k Switch Voltage Drop RSEN 0.02Ω 0.25 0.20 VOLTAGE DROP (V) + CDLY 0.1µF RSEN 0.02Ω RDLY 100k *IRLR034 5A MAX TTL, CMOS INPUT POWER BUS 0.15 0.10 0.05 µP SYSTEM DISK DRIVE DISPLAY PRINTER, ETC. 0.00 GND 0 1 2 OUTPUT CURRENT (A) 3 1155 TA02 *SURFACE MOUNT 1155 TA01 Rev. C Document Feedback For more information www.analog.com 1 LTC1155 ABSOLUTE MAXIMUM RATINGS (Note 1) Supply Voltage...........................................................22V Input Voltage.........................(VS +0.3V) to (GND – 0.3V) Gate Voltage...........................(VS +24V) to (GND – 0.3V) Current (Any Pin)....................................................50mA Storage Temperature Range................... – 65°C to 150°C Operating Temperature Range LTC1155C................................................. 0°C to 70°C LTC1155I............................................. – 40°C to 85°C LTC1155M (OBSOLETE).................... – 55°C to 125°C Lead Temperature Range (Soldering, 10 sec.)....... 300°C PIN CONFIGURATION TOP VIEW DS1 1 8 DS2 G1 2 7 G2 GND 3 6 VS TOP VIEW 5 IN2 IN1 4 J8 PACKAGE 8-LEAD CERDIP TJMAX = 150°C, θJA = 100°C/W (J8) OBSOLETE PACKAGE TOP VIEW DS1 1 8 DS2 DS1 1 8 DS2 G1 2 7 G2 G1 2 7 G2 GND 3 6 VS GND 3 6 VS IN1 4 5 IN2 IN1 4 5 IN2 N8 PACKAGE 8-LEAD PDIP S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 100°C, θJA = 130°C/W (N8) TJMAX = 100°C, θJA = 150°C/W ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PACKAGE DESCRIPTION TEMPERATURE RANGE LTC1155CN8#PBF LTC1155CN8#TRPBF PART MARKING* 8-Lead PDIP 0°C to 70°C LTC1155IN8#PBF LTC1155IN8#TRPBF 8-Lead PDIP –40°C to 85°C OBSOLETE PACKAGE LTC1155CJ8#PBF LTC1155CJ8#TRPBF 8-Lead CERDIP 0°C to 70°C LTC1155MJ8#PBF LTC1155MJ8#TRPBF 8-Lead CERDIP –55°C to 125°C LTC1155CS8#PBF LTC1155CS8#TRPBF 1155 8-Lead Plastic SO 0°C to 70°C LTC1155IS8#PBF LTC1155IS8#TRPBF 1155I 8-Lead Plastic SO –40°C to 85°C Contact the factory for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. Rev. C 2 For more information www.analog.com LTC1155 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = 4.5V to 18V, unless otherwise noted. LTC1155M (OBSOLETE) MIN TYP MAX SYMBOL PARAMETER CONDITIONS VS Supply Voltage IQ Quiescent Current OFF VIN = 0V, VS = 5V (Note 2) Quiescent Current ON VS = 5V, VIN = 5V (Note 3) 85 Quiescent Current ON VS = 12V, VIN = 5V (Note 3) 180 l 4.5 18 8 LTC1155C/LTC1155I MIN TYP MAX 4.5 UNITS 18 V 8 20 µA 120 85 120 µA 400 180 400 µA 20 VINH Input High Voltage l VINL Input Low Voltage l 0.8 0.8 V IIN Input Current l ±1.0 ±1.0 µA 120 125 mV mV ±0.1 µA 0V < VIN < VS CIN Input Capacitance VSEN Drain Sense Threshold Voltage ISEN Drain Sense Input Current 0V < VSEN < VS VGATE-VS Gate Voltage Above Supply VS = 5V VS = 6V VS = 12V tON Turn ON Time tSC Turn OFF Time Short-Circuit Turn OFF Time 2.0 5 l tOFF 2.0 80 75 100 100 V 5 120 125 80 75 100 100 ±0.1 pF 6.0 7.5 15 6.8 8.5 18 9.0 15 25 6.0 7.5 15 6.8 8.5 18 9.0 15 25 V V V VS = 5V, CGATE = 1000pF Time for VGATE > VS + 2V Time for VGATE > VS + 5V 50 200 250 1100 750 2000 50 200 250 1100 750 2000 µs µs VS = 12V, CGATE = 1000pF Time for VGATE > VS + 5V Time for VGATE > VS + 10V 50 120 180 450 500 1200 50 120 180 450 500 1200 µs µs VS = 5V, CGATE = 1000pF Time for VGATE < 1V 10 36 60 10 36 60 µs VS = 12V, CGATE = 1000pF Time for VGATE < 1V 10 26 60 10 26 60 µs VS = 5V, CGATE = 1000pF Time for VGATE < 1V 5 16 30 5 16 30 µs VS = 12V, CGATE = 1000pF Time for VGATE < 1V 5 16 30 5 16 30 µs Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. l l l Note 2: Quiescent current OFF is for both channels in OFF condition. Note 3: Quiescent current ON is per driver and is measured independently. Rev. C For more information www.analog.com 3 LTC1155 TYPICAL PERFORMANCE CHARACTERISTICS Standby Supply Current Supply Current/Side (ON) 1000 VIN1 = VIN2 = 0V TJ = 25°C 45 SUPPLY CURRENT (µA) SUPPLY CURRENT (µA) VIN1 OR VIN2 = 2V TJ = 25°C 900 40 35 30 25 20 22 800 20 700 18 600 500 400 12 300 10 200 8 5 100 6 0 0 15 5 10 SUPPLY VOLTAGE (V) 0 20 0 15 5 10 SUPPLY VOLTAGE (V) Input Threshold Voltage VON 1.6 1.4 VOFF 1.2 1.0 0.8 0.6 0.4 15 5 10 SUPPLY VOLTAGE (V) 0 30 140 27 130 24 120 21 110 18 100 90 20 9 6 60 3 0 15 5 10 SUPPLY VOLTAGE (V) 0 20 CGATE = 1000pF 35 300 200 VGS = 2V 100 0 0 15 5 10 SUPPLY VOLTAGE (V) 20 TURN-OFF TIME (µs) 40 35 TURN OFF TIME (µs) 40 700 VGS = 5V 30 25 20 15 30 25 15 10 5 5 0 15 5 10 SUPPLY VOLTAGE (V) 1155 G07 20 1155 G08 VSEN = VS –1V NO EXTERNAL DELAY 20 10 0 10 CGATE = 1000pF TIME FOR VGATE < 1V 45 800 400 8 6 4 SUPPLY VOLTAGE (V) Short-Circuit Turn OFF Delay Time 50 CGATE = 100pF TIME FOR VGATE < 1V 45 600 2 1155 G06 Turn OFF Time 50 500 0 1155 G05 Turn ON Time 900 12 70 1155 G04 1000 15 80 50 20 Low Side Gate Voltage 150 VGATE (V) DRAIN SENSE THRESHOLD VOLTAGE (V) 2.0 15 5 10 SUPPLY VOLTAGE (V) 0 1155 TPC03 Drain Sense Threshold Voltage 2.2 1.8 4 20 1155 G02 2.4 TURN-ON TIME (µs) 16 14 10 15 1155 G01 INPUT THRESHOLD VOLTAGE (V) High Side Gate Voltage 24 V GATE – VS (V) 50 0 0 15 5 10 SUPPLY VOLTAGE (V) 20 1155 G09 Rev. C 4 For more information www.analog.com LTC1155 TYPICAL PERFORMANCE CHARACTERISTICS Supply Current Per Side (ON) Input ON Threshold 2.4 45 900 2.2 40 800 2.0 35 30 25 20 VS = 18V 15 10 5 700 600 500 400 300 200 VS = 5V 0 –50 – 25 100 0 25 50 75 TEMPERATURE (°C) 100 125 INPUT THRESHOLD (V) 1000 SUPPLY CURRENT (µA) SUPPLY CURRENT (µA) Standby Supply Current 50 VS = 12V 1.6 1.4 VS = 5V 1.2 1.0 VS = 18V 0.8 VS = 5V 0 – 50 –25 1.8 0.6 0 25 50 75 TEMPERATURE (°C) 100 1155 G10 125 1155 G11 0.4 –50 – 25 0 25 50 75 TEMPERATURE (°C) 100 125 1155 G12 PIN FUNCTIONS Input Pin The LTC1155 logic input is a high impedance CMOS gate and should be grounded when not in use. These input pins have ESD protection diodes to ground and supply and, therefore, should not be forced beyond the power supply rails. Gate Drive Pin The gate drive pin is either driven to ground when the switch is turned OFF or driven above the supply rail when the switch is turned ON. This pin is a relatively high impedance when driven above the rail (the equivalent of a few hundred kΩ). Care should be taken to minimize any loading of this pin by parasitic resistance to ground or supply. Supply Pin The supply pin of the LTC1155 serves two vital purposes. The first is obvious: it powers the input, gate drive, regulation and protection circuitry. The second purpose is less obvious: it provides a Kelvin connection to the top of the two drain sense resistors for the internal 100mV reference. The supply pin should be connected directly to the power supply source as close as possible to the top of the two sense resistors. The supply pin of the LTC1155 should not be forced below ground as this may result in permanent damage to the device. A 300Ω resistor should be inserted in series with the ground pin if negative supply voltages are anticipated. Drain Sense Pin As noted previously, the drain sense pin is compared against the supply pin voltage. If the voltage at this pin is more than 100mV below the supply pin, the input latch will be reset and the MOSFET gate will be quickly discharged. Cycle the input to reset the short-circuit latch and turn the MOSFET back on. This pin is also a high impedance CMOS gate with ESD protection and, therefore, should not be forced beyond the power supply rails. To defeat the over current protection, short the drain sense to supply. Some loads, such as large supply capacitors, lamps or motors require high inrush currents. An RC time delay must be added between the sense resistor and the drain sense pin to ensure that the drain sense circuitry does not false trigger during start-up. This time constant can be set from a few microseconds to many seconds. However, very long delays may put the MOSFET in risk of being destroyed by a short-circuit condition (see Applications Information section). Rev. C For more information www.analog.com 5 LTC1155 BLOCK DIAGRAM VS LOW STANDBY CURRENT REGULATOR 100mV REFERENCE ANALOG IN DRAIN SENSE ANALOG SECTION TTL-TO-CMOS CONVERTER COMP 10µs DELAY GATE CHARGE AND DISCHARGE CONTROL LOGIC DIGITAL VOLTAGE REGULATORS R ONE SHOT S GATE INPUT LATCH GND OSCILLATOR AND CHARGE PUMP FAST/SLOW GATE CHARGE LOGIC 1155 BD OPERATION The LTC1155 contains two independent power MOSFET gate drivers and protection circuits (refer to the Block Diagram for details). Each half of the LTC1155 consists of the following functional blocks: TTL and CMOS Compatible Inputs Each driver input has been designed to accommodate a wide range of logic families. The input threshold is set at 1.3V with approximately 100mV of hysteresis. A voltage regulator with low standby current provides continuous bias for the TTL to CMOS converters. The TTL to CMOS converter output enables the rest of the circuitry. In this way the power consumption is kept to a minimum in the standby mode. Internal Voltage Regulation The output of the TTL to CMOS converter drives two regulated supplies which power the low voltage CMOS logic and analog blocks. The regulator outputs are isolated from each other so that the noise generated by the charge pump logic is not coupled into the 100mV reference or the analog comparator. Gate Charge Pump Gate drive for the power MOSFET is produced by an adaptive charge pump circuit that generates a gate voltage substantially higher than the power supply voltage. The charge pump capacitors are included on-chip and, therefore, no external components are required to generate the gate drive. Drain Current Sense The LTC1155 is configured to sense the drain current of the power MOSFET in high side applications. An internal 100mV reference is compared to the drop across a sense resistor (typically 0.002Ω to 0.1Ω) in series with the drain lead. If the drop across this resistor exceeds the internal 100mV threshold, the input latch is reset and the gate is quickly discharged by a large N-channel transistor. Controlled Gate Rise and Fall Times When the input is switched ON and OFF, the gate is charged by the internal charge pump and discharged in a controlled manner. The charge and discharge rates have been set to minimize RFI and EMI emissions in normal operation. If a short circuit or current overload condition is encountered, the gate is discharged very quickly (typically a few microseconds) by a large N-channel transistor. Rev. C 6 For more information www.analog.com LTC1155 APPLICATIONS INFORMATION Protecting the MOSFET in the power supply can be substantial and attributed to many sources including harness wiring, PCB traces, supply capacitor ESR, transformer resistance or battery resistance. The MOSFET is protected against destruction by removing drive from the gate as soon as an overcurrent condition is detected. Resistive and inductive loads can be protected with no external time delay. Large capacitive or lamp loads, however, require that the overcurrent shutdown function be delayed long enough to start the load but short enough to ensure the safety of the MOSFET. For this example, we assume a worst-case scenario; i.e., that the power supply to the power MOSFET is “hard” and provides a constant 5V regardless of the current. In this case, the current is limited by the RDS(ON) of the MOSFET and the drain sense resistance. Therefore: Example Calculations IPEAK = VSUPPLY/0.08Ω Consider the circuit of Figure 1. A power MOSFET is driven by one side of an LTC1155 to switch a high inrush current load. The drain sense resistor is selected to limit the maximum DC current to 3.3A. The drop across the drain sense resistor under these conditions is much larger than 100mV and is equal to the drain current times the sense resistance: RSEN = VSEN/ITRIP = 0.1/3.3A = 0.03Ω = 62.5A VDROP = (IPEAK)(RSEN) A time delay is introduced between RSEN and the drain sense pin of the LTC1155 which provides sufficient delay to start a high inrush load such as large supply capacitors. In this example circuit, we have selected the IRLZ34 because of its low RDS(ON)(0.05Ω with VGS = 5V). The FET drops 0.1V at 2A and, therefore, dissipates 200mW in normal operation (no heat sinking required). = 1.88V By consulting the power MOSFET data sheet SOA graph, we note that the IRLZ34 is capable of delivering 62.5A at a drain-to-source voltage of 3.12V for approximately 10ms. An RC time constant can now be calculated which satisfies this requirement: RC = VS = 5.0V CDLY 0.22µF VS IN1 DS1 RSEN 0.03Ω RC = RDLY 270k ⎡ ⎤ V SEN In ⎢ 1 − ⎥ ⎢⎣ R SEN • I MAX ⎥⎦ – 0.01 ⎡ ⎤ 0.10 In ⎢ 1 − ⎥ ⎣ 0.030 • 62.5 ⎦ = – 0.01/– 0.054 LTC1155 GND –t G1 IRLZ34 LOAD GND 1155 F01 Figure 1. Adding an RC Delay If the output is shorted to ground, the current through the FET rises rapidly and is limited by the RDS(ON) of the FET, the drain sense resistor and the series resistance between the power supply and the FET. Series resistance = 182ms This time constant should be viewed as a maximum safe delay time and should be reduced if the competing requirement of starting a high inrush current load is less stringent; i.e., if the inrush time period is calculated at 20ms, the RC time constant should be set at roughly two or three times this time period and not at the maximum of 182ms. A 60ms time constant would be produced with a 270k resistor and a 0.22µF capacitor (as shown in Figure 1). For more information www.analog.com Rev. C 7 LTC1155 APPLICATIONS INFORMATION Graphical Approach to Selecting RDLY and CDLY Figure 2 is a graph of normalized overcurrent shutdown time versus normalized MOSFET current. This graph can be used instead of the above equation to calculate the RC time constant. The Y axis of the graph is normalized to one RC time constant. The X axis is normalized to the set current. (The set current is defined as the current required to develop 100mV across the drain sense resistor). to the sense pin and dramatically reducing the amount of time the MOSFET is in an overload condition. The drain sense resistor value is selected to limit the maximum DC current to 4A. Above 28A, the delay time drops to 10µs. VS = 5.0V CDLY 0.22µF VS Note that the shutdown time is shorter for increasing levels of MOSFET current. This ensures that the total energy dissipated by the MOSFET is always within the bounds established by the MOSFET manufacturer for safe operation. IN1 RDLY 270k DS1 D1 1N4148 LTC1155 IRLZ34 G1 GND LOAD GND 10 OVERCURRENT SHUTDOWN TIME (1= RC) RSEN 0.025Ω 1155 F03 Figure 3. Using a Speed-Up Diode 1 Switched Supply Applications 0.1 0.01 1 2 50 100 5 10 20 MOSFET CURRENT (1 = SET CURRENT) 1155 F02 Figure 2. Shutdown Time vs MOSFET Current In the example presented above, we established that the power MOSFET should not be allowed to pass 62.5A for more than 10ms. 62.5A is roughly 18 times the set current of 3.3A. By drawing a line up from 18 and reflecting it off the curve, we establish that the RC time constant should be set at 10ms divided by 0.054, or 180ms. Both methods result in the same conclusion. Large inductive loads, such as solenoids, relays and motors store energy which must be directed back to either the power supply or to ground when the supply voltage is interrupted (see Figure 4). In normal operation, when the switch is turned OFF, the energy stored in the inductor is harmlessly absorbed by the MOSFET; i.e., the current flows out of the supply through the MOSFET until the inductor current falls to zero. + + VS IN1 Using a Speed Up Diode DS1 CDLY RSEN 0.025Ω RDLY LTC1155 GND A way to further reduce the amount of time that the power MOSFET is in a short-circuit condition is to “bypass”the delay resistor with a small signal diode as shown in Figure 3. The diode will engage when the drop across the drain sense resistor exceeds 0.7V, providing a direct path CS G1 IRLZ34 L LOAD GND 1155 F04 Figure 4. Switched Supply Rev. C 8 For more information www.analog.com LTC1155 APPLICATIONS INFORMATION If the MOSFET is turned ON and the power supply (battery) removed, the inductor current is delivered by the supply capacitor. The supply capacitor must be large enough to deliver the energy demanded by the discharging inductor. If the storage capacitor is too small, the supply lead of the LTC1155 may be pulled below ground, permanently destroying the device. Consider the case of a load inductance of 1mH which is supporting 3A when the 6V power supply connection is interrupted. A supply capacitor of at least 250µF is required to prevent the supply lead of the LTC1155 from being pulled below ground (along with any other circuitry tied to the supply). Any wire between the power MOSFET source and the load will add a small amount of parasitic inductance in series with the load (approximately 0.4µH/foot). Bypass the power supply lead of the LTC1155 with a minimum of 10µF to ensure that this parasitic load inductance is discharged safely, even if the load is otherwise resistive. Overvoltage Protection The MOSFET and load can be protected against overvoltage conditions by using the circuit of Figure 6. The drain sense function is used to detect an overvoltage condition and quickly discharge the power MOSFET gate. The 18V zener diode conducts when the supply voltage exceeds 18.6V and pulls the drain sense pin 0.6V below the supply pin voltage. The supply voltage is limited to 18.6V and the gate drive is immediately removed from the MOSFET to ensure that it cannot conduct during the overvoltage period. The gate of the MOSFET will be latched OFF until the supply transient is removed and the input turned OFF and ON again. VS = 4.5V TO 18V VS Large Inductive Loads IN1 Large inductive loads (>0.1mH) may require diodes connected directly across the inductor to safely divert the stored energy to ground. Many inductive loads have these diodes included. If not, a diode of the proper current rating should be connected across the load to safely divert the stored energy. RSEN CDLY RDLY DS1 + LTC1155 100k 10µF 25V G1 GND 5V 300Ω 1/4W LOAD GND 1155 F05 Figure 5. Reverse Battery Protection Reverse-Battery Protection VS = 4.5V TO 18V The LTC1155 can be protected against reverse-battery conditions by connecting a resistor in series with the ground lead as shown in Figure 5. The resistor limits the supply current to less than 50mA with –12V applied. Since the LTC1155 draws very little current while in normal operation, the drop across the ground resistor is minimal. The TTL or CMOS driving logic is protected against reverse-battery conditions by the 100k input current limiting resistor. The addition of 100k resistance in series with the input pin will not affect the turn ON and turn OFF times which are dominated by the controlled gate charge and discharge periods. 510Ω 10k VS IN1 1N4148 DS1 LTC1155 GND G1 18V LOAD GND 1155 F06 Figure 6. Overvoltage Shutdown and Protection Rev. C For more information www.analog.com 9 LTC1155 TYPICAL APPLICATIONS Dual 2A Autoreset Electronic Fuse 5V + 0.1µF 0.03Ω 10µF 0.1µF 30k DS1 G1 1/2 SI9956DY 8 4 LMC555 3 fO = 1Hz 1N4148 750k 1N4148 0.03Ω 30k VS DS2 G2 1/2 SI9956DY LTC1155 100k IN1 100k IN2 GND 2 6 OUT 1 1 OUT 2 1.0µF ALL COMPONENTS SHOWN ARE SURFACE MOUNT 1155 TA03 High Side Driver with VDS Sense Short-Circuit Shutdown 4.5V TO 6V + 10µF 30k VS 5V * IN1 DS1 1/2 LTC1155 GND IRLZ24 G1 0.01µF 270k LOAD *ANY 74C OR 74HC LOGIC GATE. MOSFET SHUTS DOWN IF VDS > 1V 1155 TA04 Rev. C 10 For more information www.analog.com LTC1155 TYPICAL APPLICATIONS X-NOR Fault Detection 4.5V TO 6V + 10µF 0.1Ω VS DS1 1/2 LTC1155 IN1 10k IRLD024 G1 GND 100k FAULT LOAD 74C266 1155 TA05 Truth Table IN OUT CONDITION FLT 0 1 0 Switch OFF 1 0 Short Circuit 0 0 1 Open Load 0 1 1 Switch ON 1 Low Side Driver with Source End Current Sensing Low Side Driver with Drain End Current Sensing 5V + 5V 10µF 0.05Ω 5% VS IN1 10µF 51Ω VS DS1 1/2 LTC1155 GND + LOAD G1 VLOAD IN1 SMP25N05 LOAD DS1 1/2 LTC1155 GND SMP25N05 G1 7 1155 TA06 6 + LT®1077* 51Ω 4 – 3 2 0.02Ω 5% 1155 TA07 *DO NOT SUBSTITUTE. MUST BE A PRECISION, SINGLE SUPPLY, MICROPOWER OP AMP (IQ < 60µA) Rev. C For more information www.analog.com 11 LTC1155 TYPICAL APPLICATIONS Automotive High Side Driver with Reverse-Battery and High Voltage Transient Protection 9V TO 16V + CDLY** 10µF VS 5V 100k* IN1 RDLY** DS1 18V 1N4746A 1/2 LTC1155 GND 0.02Ω 5% MTP50N05E G1 18V 1N4746A 300Ω 1/4W VALVE, ETC. M 1155 TA08 *PROTECTS TTL/CMOS GATES DURING HIGH VOLTAGE TRANSIENT OR REVERSE BATTERY **NOT REQUIRED FOR INDUCTIVE OR RESISTIVE LOADS Using the Second Channel for Fault Detection 4.5V TO 5.5V + 100k FLT µP OR CONTROL LOGIC ON/OFF 0.1µF* 10µF DS1 1N4148 1N4148 100k G2 VS 30k* DS2 LTC1155 SMD25N05-45L IN2 IN1 0.05Ω GND G1 LOAD NOTE: DRAIN SENSE 2 IS USED TO DETECT A FAULT IN CHANNEL 1. GATE 2 PULLS DOWN ON DRAIN SENSE 1 TO DISCHARGE THE MOSFET AND REPORT THE FAULT TO THE µP 1155 TA10 *NOT REQUIRED FOR RESISTIVE OR INDUCTIVE LOADS Rev. C 12 For more information www.analog.com LTC1155 TYPICAL APPLICATIONS 5V/3A Extremely Low Voltage Drop Regulator with 10µA Standby Current and Short-Circuit Protection 5.2V TO 6V + 10µF 0.1µF 300k VS IN1 ON/OFF 0.02Ω DS1 1/2 LTC1155 100k G1 GND IRLR024 200pF FAULT 10k 0.1µF 1 8 3 LT1431 7 6 4 5V/3A + 5 *CAPACITOR ESR SHOULD BE LESS THAN 0.5Ω 470µF* 1155 TA09 Bootstrapped Gate Drive for (100Hz < FO < 10kHz) 9V TO 18V 0.01µF 5V VS µP OR CMOS/TTL LOGIC IN1 DS1 1N4148 0.01Ω 30k 1/2 LTC1155 GND G1 2N2222 0.1µF IRFZ44 VGATE = 2VS – 0.6V 18V 2N3906 RISE AND FALL TIMES ARE βETA TIMES FASTER LOAD 1155 TA11 Rev. C For more information www.analog.com 13 LTC1155 TYPICAL APPLICATIONS Logic Controlled Boost Mode Switching Regulator with Short-Circuit Protection and 8µA Standby Current 4.75V TO 5.25V + 0.33µF 100µF VS FROM µP, ETC. 0.02Ω 100k DS1 1/2 LTC1155 IN1 MTM25N05L G1 GND FAULT 1N5820 50µH* 1N4148 5V SWITCHED 12V/1A 5 68µF 1 + LT1170 1k 4 10.7k 1% 2 3 + 2200µF 1.24k 1% 1µF *COILTRONICS CTX-7-52 1155 TA12 High Efficiency 60Hz Full-Wave Synchronous Rectifier ** 100k 10k 12.6VCT 110V AC 10Ω 2 3 – + 18V 1N4746A 1N4148 DS1 IN1 7 LT1006 6 S 1N4148 VS IRFZ44* 9V/3A DC D DS2 G1 + LTC1155 1N4148 IN2 4 4700µF 16V G2 GND 1N4148 0.03Ω + 10k 10µF 100k 1N4001 18V 1N4746A S ** MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA *NO HEATSINK REQUIRED. CASES (DRAINS) CAN BE TIED TOGETHER **INTERNAL BODY DIODE OF MOSFET D IRFZ44* 1155 TA13 Rev. C 14 For more information www.analog.com LTC1155 TYPICAL APPLICATIONS High Efficiency 60Hz Full-Wave Synchronous Rectifier 9V/3A DC 10k 110V AC 6.3V AC 2 3 100k 1N4148 – + DS2 IN1 7 6 LT1006 VS DS1 G1 ** LTC1155 1N4148 IN2 4 10k 4 × IRFZ44* D S D S S S D ** + 4700µF 16V G2 GND ** ** 18V 1N4746A 18V 1N4746A 100k 10Ω D 0.03Ω 1155 TA14 MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA *NO HEATSINK REQUIRED **INTERNAL BODY DIODE OF MOSFET Push-Pull Driver with Shoot-Through Current Lockout (fO < 100Hz) 4.5V TO 6V 5V 100k 0.01Ω 0.1µF 300k 10µF 100k DS1 IN1 HI/LO 74HC02 VS DS2 G1 * IRLZ24 LTC1155 IN2 VOUT G2 GND * IRFZ24 1N4148 1N4148 1155 TA15 *OPPOSING GATE MUST DROP BELOW 2V BEFORE THE OTHER IS CHARGED Rev. C For more information www.analog.com 15 LTC1155 TYPICAL APPLICATIONS Full H-Bridge Driver with Shoot-Through Current Lockout and Stall Current Shutdown (fO < 100Hz) 4.5V TO 6V 10µF 0.1µF 0.01Ω 100k 5V DIRECTION 74HC02 DS1 IN1 VS DS2 G1 IN2 IRLZ44 * LTC1155 VN2222L G2 IRLZ44 M GND DISABLE * IRFZ44 IRFZ44 VN2222L 1155 TA16 *OPPOSING GATES ARE HELD OFF UNTIL OTHER GATES DROP BELOW 1.5V DC Motor Speed and Torque Control for Cordless Tools and Appliances + 100Ω 6V 0.1µF + 47µF 16V 300k 1M 1.1k 0.1Ω 10k TORQUE ADJUST 1M + 100k DS1 IN1 1/2 LT1017 – 1M 1M 10k SPEED ADJUST 120k + 1/2 LT1017 DS2 G1 IRFZ24 LTC1155 IN2 – 0.0033µF VS 1A TO 10A MAX G2 GND SMALL DC APPLIANCE OR TOOL MOTOR M 100k 1155 TA17 SPEED IS PROPORTIONAL TO PULSE WIDTH. TORQUE IS PROPORTIONAL TO CURRENT Rev. C 16 For more information www.analog.com LTC1155 PACKAGE DESCRIPTION J8 Package 8-Lead CERDIP (Narrow .300 Inch, Hermetic) (Reference LTC DWG # 05-08-1110) CORNER LEADS OPTION (4 PLCS) .023 – .045 (0.584 – 1.143) HALF LEAD OPTION .045 – .068 (1.143 – 1.650) FULL LEAD OPTION .005 (0.127) MIN .405 (10.287) MAX 8 7 6 5 .025 (0.635) RAD TYP .220 – .310 (5.588 – 7.874) 1 .300 BSC (7.62 BSC) 2 3 4 .200 (5.080) MAX .015 – .060 (0.381 – 1.524) .008 – .018 (0.203 – 0.457) 0° – 15° NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS .045 – .065 (1.143 – 1.651) .014 – .026 (0.360 – 0.660) .100 (2.54) BSC .125 3.175 MIN J8 0801 OBSOLETE PACKAGE Rev. C For more information www.analog.com 17 LTC1155 PACKAGE DESCRIPTION N Package 8-Lead PDIP (Narrow .300 Inch) (Reference LTC DWG # 05-08-1510 Rev I) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 8.255 +0.889 –0.381 .045 – .065 (1.143 – 1.651) .065 (1.651) TYP .400* (10.160) MAX .130 ±.005 (3.302 ±0.127) 8 7 6 1 2 3 5 .255 ±.015* (6.477 ±0.381) ) .120 (3.048) .020 MIN (0.508) MIN .018 ±.003 .100 (2.54) BSC 4 N8 REV I 0711 (0.457 ±0.076) NOTE: 1. DIMENSIONS ARE INCHES MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm) S8 Package 8-Lead Plastic Small Outline (Narrow .150 Inch) .050 BSC .245 MIN (Reference LTC DWG # 05-08-1610 Rev G) .045 ±.005 .160 ±.005 .030 ±.005 TYP RECOMMENDED SOLDER PAD LAYOUT .010 – .020 × 45° (0.254 – 0.508) .008 – .010 (0.203 – 0.254) .053 – .069 (1.346 – 1.752) 0°– 8° TYP .016 – .050 (0.406 – 1.270) NOTE: 1. DIMENSIONS IN .189 – .197 (4.801 – 5.004) NOTE 3 .014 – .019 (0.355 – 0.483) TYP INCHES (MILLIMETERS) 2. DRAWING NOT TO SCALE 3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm) 4. PIN 1 CAN BE BEVEL EDGE OR A DIMPLE 8 7 6 5 .004 – .010 (0.101 – 0.254) .050 (1.270) BSC .150 – .157 (3.810 – 3.988) NOTE 3 .228 – .244 (5.791 – 6.197) SO8 REV G 0212 1 2 3 4 Rev. C 18 For more information www.analog.com LTC1155 REVISION HISTORY (Revision history begins at Rev C) REV DATE DESCRIPTION C 05/19 Obsoleted CERDIP J8 package PAGE NUMBER 2, 17 Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted implication orwww.analog.com otherwise under any patent or patent rights of Analog Devices. For morebyinformation 19 LTC1155 TYPICAL APPLICATIONS Isolated High Voltage High Side Switch with Circuit Breaker 6V TO 12V 1N5817 1N4148 0.1µF 200V 1/6 74C14 1k + 1N4148 100pF 90V 4N28 B 100k 1k C 10mA CONTROL E DS1 IN1 10µF 25V VS DS2 G1 6A MAX LTC1155 1N5817 IN2 G2 1k 2N2222 GND 18V 1N4746A 1M 0.1Ω M MUR420 1155 TA18 Isolated Solid-State AC Relay with Circuit Breaker 18V 1N4746A IN/OUT 18V 1N4746A IRFZ24 5V 0.1µF 1/6 74C14 100k 0.0022µF 100k 300Ω 600Ω + DS1 IN1 1µF IN2 1/6 74C14 T1* VS 0.05Ω 100k DS2 G1 IRFZ24 LTC1155 1N4148 ON/OFF 0.01µF 5.6V 1N4690A 1N5817 100k GND IN/OUT 24V AC 2A MAX G2 EQUIVALENT FUNCTION IN/OUT *PICO ELECTRONICS F-28115 OR EQUIVALENT ON/OFF IN/OUT 2A 1155 TA19 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC1153 Auto-Reset Electronic Circuit Breaker Programmable Trip Current, Fault Status Output LT1161 Quad Protected High Side MOSFET Driver 8V to 48V Supply Range, Individual Short-Circuit Protection LTC1163 Triple 1.8V to 6V High Side MOSFET Driver 0.01µA Standby Current, Triple Driver in SO-8 Package LTC1255 Dual 24V High Side MOSFET Driver Operates from 9V to 24V, Short-Circuit Protection LTC1477 Protected Monolithic High Side Switch Low RDS(ON) 0.07Ω Switch, 2A Short-Circuit Protected LTC1623 SMBus Dual High Side Switch Controller 2-Wire SMBus Serial Interface, Built-In Gate Charge Pumps LTC1710 SMBus Dual Monolithic High Side Switch Two Low RDS(ON) 0.4Ω/300mA Switches in 8-Lead MSOP Package LT1910 Protected High Side MOSFET Driver 8V to 48V Supply Range, Fault Status Output Rev. C 20 05/19 www.analog.com For more information www.analog.com  ANALOG DEVICES, INC. 1991