TB2300L

LITE-ON SEMICONDUCTOR TB0640L thru TB3500L Bi-Directional VDRM IPP - 58 to 320 Volts - 30 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMB SMB A DIM. A B B C C D E MIN. 4.06 3.30 1.96 0.15 5.21 0.05 2.01 0.76 MAX. 4.57 3.94 2.21 0.31 5.59 0.20 2.62 1.52 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams G H E F D F G H All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range SYMBOL VALUE UNIT A A ℃ ℃ IPP ITSM TJ TSTG 30 15 -40 to +150 -55 to +150 THERMAL RESISTANCE CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL VALUE UNIT ℃/W ℃/W %/℃ Rth(J-L) Rth(J-A) △VBR/△TJ 30 120 0.1 MAXIMUM RATED SURGE WAVEFORM WAVEFORM 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE IPP (A) 200 150 100 60 50 30 IPP, PEAK PULSE CURRENT (%) 100 Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value 50 Half value 0 tr tp TIME REV. 0, 15-Nov-2001, KSWB05 ELECTRICAL CHARACTERISTICS @ TA= 25℃ unless otherwise specified TB0640L thru TB3500L PARAMETER RATED REPETITIVE OFF-STATE VOLTAGE OFF-STATE LEAKAGE CURRENT @ VDRM BREAKOVER VOLTAGE ON-STATE VOLTAGE @ IT=1.0A BREAKOVER CURRENT HOLDING CURRENT OFF-STATE CAPACITANCE SYMBOL UNITS VDRM Volts IDRM uA VBO Volts VT Volts IBOmA IBO+ mA IHmA IH+ mA Co pF LIMIT Max Max Max Max Min Max Min Max Typ TB0640L TB0720L TB0900L TB1100L TB1300L TB1500L TB1800L TB2300L TB2600L TB3100L TB3500L 58 65 75 90 120 140 160 190 220 275 320 5 5 5 5 5 5 5 5 5 5 5 77 88 98 130 160 180 220 265 300 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 50 50 50 50 50 50 50 50 50 50 50 800 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 150 800 800 800 800 800 800 800 800 800 800 800 100 100 100 60 60 60 60 40 40 40 40 SYMBOL VDRM IDRM VBR IBR VBO IBO IH VT IPP CO PARAMETER Stand-off Voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current IBR Breakover voltage Breakover current IBO IH IDRM IPP I V VT VBR VDRM VBO Holding current On state voltage Peak pulse current Off state capacitance Note: 1 Note: 2 REV. 0, 15-Nov-2001, KSWB05 NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias. RATING AND CHARACTERISTICS CURVES TB0640L thru TB3500L FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 100 1.20 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF STATE CURRENT (uA) 1.15 10 1.10 VBR (TJ) VBR (TJ=25℃) 1.0 VDRM=50V 1.05 0.1 1.0 0.01 0.95 0.001 -25 0 25 50 75 100 125 150 0.90 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE 1.10 FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE 100 NORMALIZED BREAKOVER VOLTAGE 1.05 VBO (TJ) VBO (TJ=25℃) I(T), ON STATE CURRENT 10 1.0 TJ = 25℃ 0.95 -50 1 -25 0 25 50 75 100 125 150 175 1 2 3 4 5 6 7 8 9 TJ, JUNCTION TEMPERATURE (℃) V (T); ON STATE VOLTAGE FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE 2 1 FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS NORMALIZED HOLDING CURRENT 1.5 1 IH (TJ) IH (TJ=25℃) 0.5 NORMALIZE CAPACITANCE CO(VR) CO(VR = 1V) Tj =25℃ f=1MHz VRMS = 1V 0 -50 -25 0 25 50 75 100 125 0.1 1 10 100 TJ, JUNCTION TEMPERATURE (℃) VR, REVERSE VOLTAGE REV. 0, 15-Nov-2001, KSWB05 TYPICAL CIRCUIT APPLICATIONS TB0640L thru TB3500L FUSE RING TSPD 1 TELECOM EQUIPMENT E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT E.G. ISDN TSPD 2 TIP PTC RING PTC TSPD 2 TSPD 1 TSPD 3 TELECOM EQUIPMENT E.G. LINE CARD TIP PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device REV. 0, 15-Nov-2001, KSWB05