LBC847CLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LBC846ALT1G S-LBC846ALT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Collector–Emitter Voltage 1 Symbol Vdc VCBO SOT–23 VEBO 1 B ASE Vdc 6.0 6.0 5.0 IC 100 2 EMIT T ER mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg –55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 3 COLLECT OR Vdc 80 50 30 LBC846 LBC847, LBC850 LBC848, LBC849 Collector Current – Continuous 2 Unit 65 45 30 LBC846 LBC847, LBC850 LBC848, LBC849 Emitter–Base Voltage Value VCEO LBC846 LBC847, LBC850 LBC848, LBC849 Collector–Base Voltage 3 xx 1 2 xx= Device Marking (See Table Below) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.A 1/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC846ALT1G S-LBC846ALT1G LBC846ALT3G S-LBC846ALT3G LBC846BLT1G S-LBC846BLT1G LBC846BLT3G S-LBC846BLT3G LBC847ALT1G S-LBC847ALT1G LBC847ALT3G S-LBC847ALT3G LBC847BLT1G S-LBC847BLT1G LBC847BLT3G S-LBC847BLT3G LBC847CLT1G S-LBC847CLT1G LBC847CLT3G S-LBC847CLT3G LBC848ALT1G S-LBC848ALT1G LBC848ALT3G S-LBC848ALT3G 1A SOT-23 3000/Tape&Reel 1A SOT-23 10000/Tape&Reel 1B SOT-23 3000/Tape&Reel 1B SOT-23 10000/Tape&Reel 1E SOT-23 3000/Tape&Reel LBC848BLT1G S-LBC848BLT1G LBC848BLT3G S-LBC848BLT3G LBC848CLT1G S-LBC848CLT1G LBC848CLT3G S-LBC848CLT3G LBC849BLT1G S-LBC849BLT1G LBC849BLT3G S-LBC849BLT3G LBC849CLT1G S-LBC849CLT1G LBC849CLT3G S-LBC849CLT3G LBC850BLT1G S-LBC850BLT1G LBC850BLT3G S-LBC850BLT3G LBC850CLT1G S-LBC850CLT1G LBC850CLT3G S-LBC850CLT3G 1E SOT-23 10000/Tape&Reel 1F SOT-23 3000/Tape&Reel 1F SOT-23 10000/Tape&Reel 1G SOT-23 3000/Tape&Reel 1G SOT-23 10000/Tape&Reel 1J SOT-23 3000/Tape&Reel 1J SOT-23 10000/Tape&Reel 1K SOT-23 3000/Tape&Reel 1K SOT-23 10000/Tape&Reel 1L SOT-23 3000/Tape&Reel 1L SOT-23 10000/Tape&Reel 2B SOT-23 3000/Tape&Reel 2B SOT-23 10000/Tape&Reel 2C SOT-23 3000/Tape&Reel 2C SOT-23 10000/Tape&Reel 2E SOT-23 3000/Tape&Reel 2E SOT-23 10000/Tape&Reel 2G SOT-23 3000/Tape&Reel 2G SOT-23 10000/Tape&Reel Rev.A 2/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage LBC846A,B (IC = 10 mA) LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C V(BR)CEO 65 45 30 – – – – – – V Collector–Emitter Breakdown Voltage LBC846A,B (IC = 10 µA, VEB = 0) LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C V(BR)CES 80 50 30 – – – – – – V OFF CHARACTERISTICS Collector–Base Breakdown Voltage (IC = 10 mA) LBC846A,B LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C V(BR)CBO 80 50 30 – – – – – – V Emitter–Base Breakdown Voltage (IE = 1.0 mA) LBC846A,B LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C V(BR)EBO 6.0 6.0 5.0 – – – – – – V ICBO – – – – 15 5.0 nA µA 110 200 180 290 220 450 420 520 800 Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain hFE (IC = 2.0 mA, VCE = 5.0 V) LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B, LBC849B, LBC850B LBC847C, LBC848C, LBC849C, LBC850C – Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) – – – – 0.25 0.6 V Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) – – 0.7 0.9 – – V Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 – 660 – 700 770 mV fT 100 – – MHz Cobo – – 4.5 SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, (VCE = 5.0 Vdc, RS = 2.0 kΩ f = 1.0 kHz, BW = 200 Hz) NF LBC846A,B, LBC847A,B,C, LBC848A,B,C LBC849B,C, LBC850B,C pF dB – – – – 10 4.0 Rev.A 3/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC846A, LBC847A, LBC848A 0.18 150°C VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 300 200 25°C −55°C 100 0 0.001 0.01 0.1 0.12 25°C 0.10 0.08 0.06 −55°C 0.04 0.02 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C IC, COLLECTOR CURRENT (A) −55°C IC/IB = 20 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 IC/IB = 20 0.14 0 1 1.0 0.9 0.16 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current Rev.A 4/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC846A, LBC847A, LBC848A θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 C, CAPACITANCE (pF) 2.0 2.4 2.8 20 Figure 5. Collector Saturation Region Figure 6. Base−Emitter Temperature Coefficient 1.0 7.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 1.6 10 1.0 IC, COLLECTOR CURRENT (mA) 0.1 10 5.0 -55°C to +125°C 1.2 IB, BASE CURRENT (mA) 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances 40 0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 100 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 8. Current−Gain − Bandwidth Product Rev.A 5/13 50 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC846B 0.30 VCE = 1 V 150°C 500 400 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 25°C 300 −55°C 200 100 0 0.001 0.01 0.1 0.10 −55°C 0.05 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 9. DC Current Gain vs. Collector Current Figure 10. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 0.15 IC, COLLECTOR CURRENT (A) −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 150°C 0.20 0 1 1.1 1.0 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current Rev.A 6/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) LBC846B TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 Figure 13. Collector Saturation Region f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 2.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 15. Capacitance 50 0.5 10 20 50 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 200 Figure 14. Base−Emitter Temperature Coefficient 40 4.0 -55°C to 125°C 2.2 100 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 16. Current−Gain − Bandwidth Product Rev.A 7/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC847B, LBC848B, LBC849B, LBC850B 0.30 VCE = 1 V 150°C 500 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 400 25°C 300 −55°C 200 100 0 0.001 0.01 0.1 0.10 −55°C 0.05 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 0.15 Figure 17. DC Current Gain vs. Collector Current −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 150°C 0.20 0 1 1.1 1.0 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. Base Emitter Saturation Voltage vs. Collector Current Figure 20. Base Emitter Voltage vs. Collector Current Rev.A 8/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC847B, LBC848B, LBC849B, LBC850B 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 0.1 10 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 IB, BASE CURRENT (mA) Figure 22. Base−Emitter Temperature Coefficient 10 C, CAPACITANCE (pF) 7.0 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 4.0 6.0 8.0 10 0.4 0.6 0.8 1.0 2.0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 21. Collector Saturation Region 100 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 24. Current−Gain − Bandwidth Product Rev.A 9/13 50 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC847C, LBC848C, LBC849C, LBC850C hFE, DC CURRENT GAIN 0.30 150°C 900 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 800 700 25°C 600 500 400 −55°C 300 200 100 0 0.001 0.01 −55°C 0.05 0.0001 0.001 0.01 0.1 Figure 25. DC Current Gain vs. Collector Current Figure 26. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.10 IC, COLLECTOR CURRENT (A) −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 25°C 0.15 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 0.20 0 1 0.1 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current Figure 28. Base Emitter Voltage vs. Collector Current Rev.A 10/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series LBC847C, LBC848C, LBC849C, LBC850C 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 0.1 10 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 IB, BASE CURRENT (mA) Figure 30. Base−Emitter Temperature Coefficient 10 C, CAPACITANCE (pF) 7.0 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 31. Capacitances 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 29. Collector Saturation Region 100 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 32. Current−Gain − Bandwidth Product Rev.A 11/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series 1 1S 0.1 IC, COLLECTOR CURRENT (A) 100 mS 10 mS 1 mS Thermal Limit 0.01 0.001 1 10 100 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.1 VCE, COLLECTOR EMITTER VOLTAGE (V) 1 10 Figure 34. Safe Operating Area for LBC847A, LBC847B, LBC847C, LBC850B, LBC850C 1 100 mS 10 mS 1S 0.1 1 mS Thermal Limit 0.01 0.001 0.1 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 33. Safe Operating Area for LBC846A, LBC846B IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 35. Safe Operating Area for LBC848A, LBC848B, LBC848C, LBC849B, LBC849C Rev.A 12/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.A 13/13