MRF10350

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10350/D The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Characterized using Mode–S Pulse Format MRF10350 350 W (PEAK) 1025–1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 31 1590 9.1 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.11 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case θJC measured using Mode–S pulse train, 128 µs burst 0.5 µs on, 0.5 µs off repeating at 6.4 ms interval.) REV 1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 65 65 3.5 — — — — — — — — 25 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 — — — FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB η ψ 8.5 40 9.0 — — — dB % No Degradation in Output Power Z5 L1 D.U.T. C2 C3 C4 + + - C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT C1 — 75 pF 100 Mil Chip Capacitor C2 — 39 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 100 µF, 100 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long Z1–Z9 — Microstrip, See Details Board Material — Teflon, Glass Laminate Dielectric Thickness = 0.030″ εr = 2.55, 2 Oz. Copper .094 .573 .589 .156 .083 .170 .395 .402 .616 .278 .394 .258 .170 .364 .095 .803 .838 .130 1.518 .571 .594 1.685 .159 .396 .100 .160 .382 .083 Figure 1. Test Circuit REV 1 2 500 POUT , OUTPUT POWER (WATTS) 400 300 200 100 0 f = 1090 MHz VCC = 50 V Pulse = Mode-S(1) 0 10 20 30 40 50 60 70 80 PIN, INPUT POWER (WATTS) (1) 128 µs burst 0.5 µs on, 0.5 µs off (1) repeating at 6.4 ms interval. Figure 2. Output Power versus Input Power 1025 1050 1090 1125 f = 1150 MHz Zo = 10 Ω Zin 1150 1125 1050 1090 ZOL* f = 1025 MHz POUT = 350 W Pk f MHz 1025 1050 1090 1125 1150 Zin OHMS 1.92 + j3.80 2.44 + j3.92 3.55 + j3.02 4.11 + j2.27 4.13 + j1.35 VCC = 50 V ZOL* (1) OHMS 2.52 + j0.70 2.18 + j0.85 1.94 + j1.13 1.80 + j1.22 1.71 + j1.31 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances REV 1 3 PACKAGE DIMENSIONS –A– M U 1 Q 2 PL 0.76 (0.030) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K M N Q R U INCHES MIN MAX 0.890 0.910 0.375 0.395 0.190 0.210 0.145 0.155 0.055 0.065 0.120 0.130 0.003 0.006 0.185 0.215 45_REF 0.490 0.510 0.115 0.125 0.395 0.405 0.700 BSC MILLIMETERS MIN MAX 22.61 23.11 9.53 10.03 4.83 5.33 3.69 3.93 1.40 1.65 3.05 3.30 0.08 0.15 4.70 5.46 45_REF 12.45 12.95 2.93 3.17 10.04 10.28 17.78 BSC R 3 –B– 2 K2 PL D J H –T– SEATING PLANE N E C STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 355E–01 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 1 4