MRF421

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MRF421 100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 20 45 3.0 20 30 290 1.66 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 20 45 45 3.0 — — — — — — — — — — 10 Vdc Vdc Vdc Vdc mAdc (continued) REV 1 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 70 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) Cob — 550 800 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, ICQ = 150 mA, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc, ICQ = 150 mA, f = 30, 30.001 MHz) GPE 10 12 — dB η 40 — — % IMD — –33 –30 dB NOTE: 1. To proposed EIA method of measurement. Reference peak envelope power. + BIAS - R1 CR1 L5 + C5 C6 L4 C2 L1 D.U.T. C1 R2 C3 L3 L2 C4 C7 C8 C9 C10 12.5 Vdc RF OUTPUT RF INPUT C1, C2, C4 — 170–780 pF, ARCO 469 C3 — 80–480 pF, ARCO 466 C5, C7, C10 — ERIE 0.1 µF, 100 V C6 — MALLORY 500 µF @ 15 V Electrolytic C9 — 100 µF, 15 V Electrolytic C8 — 1000 pF, 350 V UNDERWOOD R1 — 10 Ω, 25 Watt Wirewound R2 — 10 Ω, 1.0 Watt Carbon CR1 — 1N4997 L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4 ″ I.D. L3 — 1–3/4 Turns, 1/8″ Tubing, 3/8″ I.D., 3/8″ Long L4 — 10 µH Molded Choke L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic REV 1 2 160 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS PEP) VCC = 12.5 V ICQ = 150 mA TWO TONE TEST: f = 30, 30.001 MHz 160 IMD = -30 dB ICQ = 150 mA f = 30, 30.001 MHz 120 120 80 80 40 40 0 0 4 8 12 Pin, INPUT POWER (WATTS PEP) 16 0 8 10 12 14 VCC, SUPPLY VOLTAGE (VOLTS) 16 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 25 IMD, INTERMODULATION DISTORTION (dB) 20 15 10 5 0 1.5 VCC = 12.5 V ICQ = 150 mA Pout = 100 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 -20 -25 -30 -35 -40 -45 VCC = 12.5 V ICQ = 150 mA f = 30, 30.001 MHz G PE , POWER GAIN (dB) 3RD ORDER 5TH ORDER 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS PEP) 120 140 Figure 4. Power Gain versus Frequency Figure 5. Intermodulation Distortion versus Output Power 40 IC, COLLECTOR CURRENT (AMP) 20 8 4 2 0.8 0.4 1 5 10 20 50 2 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 f = 2 MHz 30 TC = 25°C Zin 7.5 15 VCC = 12.5 V ICQ = 150 mA Pout = 100 W PEP FREQUENCY MHz 2.0 7.5 15 30 Zin Ohms 5.35 - j2.2 2.8 - j1.9 1.39 - j1.1 0.7 - j0.5 Figure 6. DC Safe Operating Area Figure 7. Series Equivalent Impedance REV 1 3 20,000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 16,000 12,000 8000 4000 0 1.5 VCC = 12.5 V ICQ = 150 mA Pout = 100 W (PEP) 2.5 2 1.5 1 0.5 0 1.5 VCC = 12.5 V ICQ = 150 mA Pout = 100 W (PEP) 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 8. Output Capacitance versus Frequency Figure 9. Output Resistance versus Frequency PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 1 4