SI1012
Features
•
•
•
Low Threshold
ESD Protected Gate
Epoxy Meets UL 94 V-0 Flammability Rating
•
Moisture Sensitivity Level 1
•
•
Halogen Free Available Upon Request By Adding Suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
N-CHANNEL
MOSFET
Maximum Ratings
•
Operating Junction Temperature Range : -55°C to +150°C
•
Storage Temperature Range: -55°C to +150°C
•
Thermal Resistance: 833°C/W Junction to Ambient
•
Thermal Resistance: 455°C/W Junction to Case
Parameter
SOT-523
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Volltage
VGS
±12
V
ID
0.5
A
IDM
1
A
150
mW
275
mW
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Total Power Dissipation
TA=25°C(Note 2)
TC=25°C(Note 3)
PD
3. This Test is Performed with Infinite Heat Sink at T C=25°C.
D
1. *$7E
2. 6285&(
3. '5$,1
G
S
D
3
Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction
Temperature.
2. This Test is Performed with no Heat Sink at TA=25°C.
Internal Structure
A
1
B C
2
E
G
J
H
K
DIM
A
B
C
D
E
G
H
J
K
DIMENSIONS
INCHES
MM
MIN MAX MIN MAX
0.059 0.067 1.50 1.70
0.030 0.033 0.75 0.85
0.057 0.069 1.45 1.75
0.020
0.50
0.035 0.043 0.90 1.10
0.000 0.004 0.00 0.10
0.024 0.031 0.60 0.80
0.004 0.008 0.10 0.20
0.006 0.014 0.15 0.35
NOTE
TYP.
Suggested Solder Pad Layout
Marking: C
1.0
0.4
(mm)
0.6
1.24
0.6
0.5
Rev.3-1-01012019
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MCCSEMI.COM
SI1012
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250µA
20
V
Gate-Source Leakage Current
IGSS
VDS=0V, VGS =±4.5V
±1
µA
Zero Gate Voltage Drain Current
IDSS
VDS=16V, VGS=0V
100
nA
0.8
1.2
V
VGS=4.5V, ID=600mA
250
700
VGS=2.5V, ID=500mA
330
850
VDS=10V, ID=400mA
1
Gate-Threshold Voltage(Note 4)
VGS(th)
Drain-Source On-Resistance(Note 4)
RDS(on)
gFS
Forward Tranconductance
Dynamic Characteristics
VDS=VGS, ID=250µA
0.45
S
(Note 5)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
12
Total Gate Charge
Qg
750
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
225
Turn-On Delay Time
td(on)
5
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
mΩ
100
VDS=16V,VGS=0V,f=1MHz
VDS=10V,VGS=4.5V,ID=250mA
VDD=10V,
RL=47Ω, ID=200mA,
VGS=4.5V,RG=10Ω
tf
pF
16
nC
75
5
ns
25
11
Drain-Source Body Diode Characteristics
Body Diode Voltage (Note 4)
VSD
IS=0.15A, VGS=0V
1.2
V
Note 4. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤0.5%.
5. Guaranteed by Design, Not Subject to Production Testing.
Rev.3-1-01012019
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MCCSEMI.COM
SI1012
Curve Characteristics
Fig. 1 - Output Characteristics
Fig. 2 - Transfer Characteristics
5
500
TA=25°C
Pulsed
VGS=5.5V
VDS= 16V
Pulesd
VGS=4.5V
4
400
Drain Current (mA)
Drain Current (A)
VGS=3.5V
3
VGS=2.5V
2
1
TA=100°C
300
200
TA=25°C
100
VGS=1.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.0
2.5
3.0
500
TA=25°C
Pulsed
500
Drain-Source On-Resistance (mΩ)
Drain-Source On-Resistance (mΩ)
2.0
Fig. 4 - RDS(ON)—VGS
Fig. 3 - RDS(ON)—ID
600
400
VGS=2.5V
300
VGS=4.5V
200
100
0
100
1.5
Gate To Source Voltage (V)
Drain To Source Voltage (V)
200
300
400
500
600
700
TA=25°C
Pulsed
400
ID=0.6A
300
200
800
1
2
3
4
5
100
125
Gate To Source Voltage (V)
Drain Current (mA)
Fig. 6 - Threshold Voltage
Fig. 5 - IS—VSD
0.85
500
TA=25°C
Pulsed
0.80
Threshold Voltage (V)
Source Current (mA)
100
10
1
0.75
ID= 250μA
0.70
0.65
0.1
0.4
0.6
0.8
1.0
1.2
50
75
Junction Temperature (°C)
Source To Drain Voltage (V)
Rev.3-1-01012019
0.60
25
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MCCSEMI.COM
SI1012
Ordering Information
Device
Packing
Part Number-TP
Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF
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written approval of Micro Commercial Components Corporation.
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customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
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