SIL2623-TP

SIL2623 Features • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Dual P-Channel MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Maximum Thermal Resistance: 357°C/W Junction to Ambient Parameter Symbol Rating SOT23-6L Unit Drain-Source Voltage VDS -30 V Gate-Source Volltage VGS ±20 V Continuous Drain Current ID -3 A Pulsed Drain Current IDM -20 A Power Dissipation PD 0.35 W G 6 5 4 B 1 2 C 3 A H M K J D DIM Internal Structure D1 6 1 S1 5 D2 4 2 G1 Rev.3-2-12122020 A B C D G H J K L M 3 S2 G2 Marking:2623 1/6 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.012 0.020 0.30 0.50 0.051 0.070 1.30 1.80 0.087 0.126 2.20 3.20 0.037 0.95 0.074 1.90 0.106 0.122 2.70 3.10 0.002 0.006 0.05 0.15 0.030 0.051 0.75 1.30 0.012 0.024 0.30 0.60 0.003 0.008 0.08 0.22 L NOTE TYP. TYP. MCCSEMI.COM SIL2623 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=-250µA -30 VGS(th) VDS=VGS, ID=-250µA -1 Gate-Body Leakage Current IGSS VGS =± 20V, VDS =0V Zero Gate Voltage Drain Current IDSS VDS =20V, VGS =0V Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistance(Note 1) RDS(on) V -3 V ±100 nA 1 µA VGS=10V, ID=-3A 130 VGS=-4.5V, ID=2A 180 Forward Tranconductance(Note 1) gFS VDS=-5V, ID=-2A Diode Forward Voltage(Note 1) VSD VGS=0V, IS=1A mΩ S 2 -1.2 V Dynamic Characteristics(Note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 32 td(on) 5 240 VDS=-25V,VGS=0V, f=1MHz pF 42 Switching Characteristics(Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Chage Qgs Gage-Drain Charge Qgd VDD=-15V,VGS=-10V,RD=15Ω, ID=-1A,RG=3.3Ω 6 ns 15 3 4.5 VDS=-24V,VGS=-4.5V,ID=-2A 0.5 nC 1.4 Note: 1. Pulse Test: Pulse Width=300μs,Duty Cycle≤2%. 2. These Parameters Have No Way To Verify. Rev.3-2-12122020 2/6 MCCSEMI.COM SIL2623 Curve Characteristics Fig. 2 - Transfer Characteristics Fig. 1 - Output Characteristics -12 -20 VDS= -3.0V TA=25°C Pulsed -10 TA=100°C VGS=-6.0V Drain Current (A) Drain Current (A) -16 VGS=-5.0V -12 VGS=-4.5V VGS=-4.0V -8 -8 TA=25°C -6 -4 VGS=-3.5V -4 -2 VGS=-3.0V -0 -0 -1 -2 -3 -0 -4 -0 -2 Fig. 3 - RDS(ON)—ID 160 Drain-Source On-Resistance (mΩ) Drain-Source On-Resistance (mΩ) VGS=-4.5V 80 VGS=-10V 40 -0 -1 -2 -3 -4 600 400 TA=100°C 200 TA=25°C 0 -5 -0 Drain Current (A) -2 -4 -6 -8 -10 Gate to Source Voltage (V) Fig. 5 - IS—VSD -5 -10 ID=-2.0A 120 60 -8 800 TA=25°C Pulsed 100 -6 Fig. 4 - RDS(ON)—VGS 140 20 -4 Gate to Source Voltage (V) Drain to Source Voltage (V) Fig. 6 - Threshold Voltage -1.8 Pulsed -1.7 TA=100°C -0.1 Threshold Voltage (V) Source Current (A) -1 TA=25°C -1.6 ID= -250μA -1.5 -1.4 -1.3 -0.01 -0.0 -0.4 -0.8 -1.2 -1.6 Source to Drain Voltage (V) Rev.3-2-12122020 -1.2 25 50 75 100 125 Junction Temperature (°C) 4/6 MCCSEMI.COM SIL2623 Ordering Information Device Packing Part Number-TP Tape&Reel: 3Kpcs/Reel Note : Adding "-HF" suffix for halogen free, eg. 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