1N6476

1N6469 thru 1N6476 Voidless-Hermetically-Sealed Unidirectional Transient Suppressors SCOTTSDALE DIVISION DESCRIPTION This series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF19500/552 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6 Volts with 1500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high reliability applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These devices are also available in a surface mount MELF package configuration by adding a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W W W . Microsemi . C O M “G” Package FEATURES • • • • • High surge current and peak pulse power provides transient voltage protection for sensitive circuits Triple-layer passivation Internal “Category I” metallurgical bonds Voidless hermetically sealed glass package JAN/TX/TXV military qualifications available per MILPRF-19500/552 by adding JAN, JANTX, or JANTXV prefix Further options for screening in accordance with MILPRF-19500 for JANS by using a “MSP” prefix, e.g. MSP6469, MSP6476, etc. Surface Mount equivalents are also available in a square-end-cap MELF configuration with a “US” suffix (see separate data sheet) • • • • • • • • • APPLICATIONS / BENEFITS Military and other high reliability transient protection Extremely robust construction Working Peak “Standoff” Voltage (VWM) from 5.0 to 51.6 V Available as 1500 W Peak Pulse Power (PPP) ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively Secondary lightning protection per select levels in IEC61000-4-5 Flexible axial-leaded mounting terminals Nonsensitive to ESD per MIL-STD-750 Method 1020 Inherently radiation hard as described in Microsemi MicroNote 050 • • MAXIMUM RATINGS o o MECHANICAL AND PACKAGING • Operating & Storage Temperature: -55 C to +175 C • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) (also see Figures 1,2 and 4) over copper • Impulse repetition rate (duty factor): 0.01% • MARKING: Body painted and part number, etc. • Forward Surge Current: 130 Amps@ 8.33 ms one-half • POLARITY: Cathode band sine wave • Tape & Reel option: Standard per EIA-296 • Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at 100 Amps (pulsed) • Weight: 1270 mg • Steady-State Power: 3.0 W @ TA = 25oC (see note • See package dimensions on last page below and Figure 4) • Thermal Resistance @ 3/8 inch lead length: 50.0 oC/W • Solder Temperatures: 260oC for 10 s (maximum) NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded. 1N6461 – 1N6468 1N6469 – 1N6476 Copyright  2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6469 thru 1N6476 Voidless-Hermetically-Sealed Unidirectional Transient Suppressors SCOTTSDALE DIVISION ELECTRICAL CHARACTERISTICS BREAK DOWN VOLTAGE V(BR) MIN. Volts 5.6 6.5 13.6 16.4 27.0 33.0 43.7 54.0 BREAKDOWN CURRENT I (BR) mAdc 50 50 10 10 5 1 1 1 WORKING PEAK VOLTAGE VWM Vdc 5 6 12 15 24 30.5 40.3 51.6 MAX LEAKAGE CURRENT ID µAdc 500 100 20 10 5 5 5 5 MAXIMUM CLAMPING VOLTAGE VC MAXIMUM PEAK PULSE CURRENT IPP @8/20 µs A(pk) 945 775 374 322 207 181 135 107 @10/1000 µs A(pk) 167 137 66 57 36.5 32 24 19 MAXIMUM TEMP. COEF. OF V(BR) %/ C -.03, +0.04 0.06 0.085 0.085 .096 .098 .101 .103 o W W W . Microsemi . C O M TYPE @ 10/1000 µs V(pk) 9.0 11.0 22.6 26.5 41.4 47.5 63.5 78.5 1N6469 1N6470 1N6471 1N6472 1N6473 1N6474 1N6475 1N6476 Symbol VBR VWM ID VC PPP SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is also referred to as Standoff Voltage. Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions. Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP. GRAPHS Pulse current (IP) in percent of IPP Peak Value IPP 1N6461 – 1N6468 1N6469 – 1N6476 Pulse time duration (tp) is defined as that point where IP decays to 50% of peak value (IPP). FIG. 1 – Non-repetive peak pulse power rating curve NOTE: Peak power defined as peak voltage times peak current time (t) in milliseconds FIG. 2 Pulse wave form for exponential surge for 10/1000 µs Copyright  2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6469 thru 1N6476 Voidless-Hermetically-Sealed Unidirectional Transient Suppressors SCOTTSDALE DIVISION W W W . Microsemi . C O M Peak Pulse Power (Ppp), Current (Ipp), and DC Power in Percent of 25oC Rating FIGURE 3 8/20 µs CURRENT IMPULSE WAVEFORM T – Temperature – oC FIGURE 4 DERATING CURVE PACKAGE DIMENSIONS Inches [mm] PACKAGE G Note: Package G lead dimension diameter is 0.040 inch nominal with –.003 +.002 inch tolerance 1N6461 – 1N6468 1N6469 – 1N6476 Copyright  2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3