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1N6620

1N6620

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N6620 - VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS - Microsemi Corporation

  • 数据手册
  • 价格&库存
1N6620 数据手册
1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W W W . Microsemi . C O M Package “A” Axial FEATURES • • • • • • • Popular JEDEC registered 1N6620 to 1N6625 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, and JANTXV available per MIL-PRF19500/585 Further options for screening in accordance with MIL-PRF-19500 for JANS by using a “MSP” prefix, e.g. MSP6620, MSP6624, etc. Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N6620US thru 1N6625US) • • • • • • • APPLICATIONS / BENEFITS Ultrafast recovery rectifier series 200 to 1000 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 • MAXIMUM RATINGS • • • Junction Temperature: -65 C to +175 C Storage Temperature: -65oC to +175oC Peak Forward Surge Current @ 25oC: 20 Amps (except 1N6625 which is 15 Amps) Note: Test pulse = 8.3 ms, half-sine wave. Average Rectified Forward Current (IO) at TL= +55oC (L=.375 inch from body): 1N6620 thru 1N6622: 2.0 Amps 1N6623 thru 1N6625: 1.5 Amps (Derate linearly at 0.833%/oC for TL> +55oC) Average Rectified Forward Current (IO) at TA=25oC: 1N6620 thru 1N6622: 1.2 Amps 1N6623 thru 1N6625: 1.0 Amp (Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.) Thermal Resistance L= 0.375 inch (RθJL): 38oC/W Capacitance at VR= 10 V: 10 pF Solder temperature: 260oC for 10 s (maximum) o o MECHANICAL AND PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: Axial-leads are Copper with Tin/Lead (Sn/Pb) finish MARKING: Body painted and part number, etc. POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-296 Weight: 340 mg See package dimensions on last page • 1N6620 thru 1N6625 • • • • Copyright  2004 12-03-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION ELECTRICAL CHARACTERISTICS @ 25oC TYPE NUMBER W W W . Microsemi . C O M MINIMUM BREAKDOWN VOLTAGE VR IR = 50µA MAXIMUM FORWARD VOLTAGE VF @ IF WORKING PEAK REVERSE VOLTAGE VRW M MAXIMUM REVERSE CURRENT IR @ VRWM IR TA=25oC TA=150oC MAXIMUM REVERSE RECOVERY TIME (LOW CURRENT) Note 1 MAXIMUM REVERSE RECOVERY TIME (HIGH CURRENT) Note 2 trr trr PEAK RECOVERY CURRENT IRM (rec) IF = 2A, 100A/µs Note 2 FORWARD RECOVERY VOLTAGE VFRM Max IF = 0.5A tfr =12ns 1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 V 220 440 660 880 990 1100 V@A 1.40V @ 1.2A 1.40V @ 1.2A 1.40V @ 1.2A 1.55V @ 1.0A 1.55V @ 1.0A 1.75V @ 1.0A V@A 1.60V @ 2.0A 1.60V @ 2.0A 1.60V @ 2.0A 1.80V @ 1.5A 1.80V @ 1.5A 1.95V @ 1.5A V 200 400 600 800 900 1000 µA 0.5 0.5 0.5 0.5 0.5 1.0 µA 150 150 150 150 150 200 ns 30 30 30 50 50 60 ns 45 45 45 60 60 80 A 3.5 3.5 3.5 4.2 4.2 5.0 V 12 12 12 18 18 30 NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750, Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/µs MIL-STD-750, Method 4031, Condition D. Symbol VBR VRWM VF IR C trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. CHARTS AND GRAPHS 1N6620 thru 1N6625 FIGURE 1 Typical Forward Current vs Forward Voltage Copyright  2004 12-03-2004 REV A FIGURE 2 Typical Forward Current vs Forward Voltage Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W W W . Microsemi . C O M FIGURE 3 Typical Reverse Current vs. Applied Reverse Voltage FIGURE 4 Typical Reverse Current vs. Applied Reverse Voltage 1N6620 thru 1N6625 FIGURE 5 Average Forward Current vs. Lead Temperature (50% Duty Cycle, Square Wave) FIGURE 6 Average Forward Current vs Lead Temperature (50% Duty Cycle, Square Wave) Copyright  2004 12-03-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W W W . Microsemi . C O M FIGURE 7 Forward Pulse Current vs. Pulse Duration FIGURE 8 Reverse Pulse Power vs. Pulse Duration PACKAGE DIMENSIONS Lead tolerance = +0.002/-0.003 inches 1N6620 thru 1N6625 Copyright  2004 12-03-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4
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