2N3838

TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices 2N3838 2N4854 2N4854U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Sym VCEO VCBO VEBO IC 2N3838(2) 40 60 5.0 600 One Trans Total Devic e 0.35 2N4854, U 40 60 5.0 600 One Total Trans Device 0.30(3) 1.0(5) 0.60 2.0 Unit Vdc Vdc Vdc mAdc TO-78* 2N4854 Tstg Lead to Case Voltage Vdc ±120 1) TC rating do not apply to Surface Mount devices (2N4854U) 2) For TA > +250C Derate linearly 1.43 mW/0C (one transistor) 2.00 mW/0C (both transistors) 3) For TA > +250C Derate linearly 1.71 mW/0C (one transistor) 3.43 mW/0C (both transistors) 4) For TC > +250C Derate linearly 4.0 mW/0C (one transistor) 8.0 mW/0C (both transistors) 5) For TC > +250C Derate linearly 5.71 mW/0C (one transistor) 11.43 mW/0C (both transistors) @ TA = +250C @ TC = + 250C(1) Operating & Storage Junction Temp. Range Operating & Storage Junction Temp. Range Total Power Dissipation PT TJ 0.25(2) 0.7 (4) 1.4 200 -55 to +200 W W 0 C 0 C 6 Pin Surface Mount* 2N4854U 6 Lead Flatpack* 2N3838 *See MILPRF19500/421 for package dimensions. ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO(1) 2N3838 2N4854, U ICBO(2) Min. 40 Max. Unit Dc OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 3.0 Vdc 10 50 10 10 10 µAdc ηAdc µAdc ηAdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42103 Page 1 of 2 2N3838, 2N4854, 2N4854U JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 150 mAdc, VCE = 1 Vdc IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc 50 35 50 75 100 35 hFE 300 VCE(sat) VBE(sat) 0.80 0.40 1.25 Vdc Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Forward Current Transfer Ratio, Magnitude IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz Small-Signal Common Emitter Input Impedance IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Small-Signal Common Emitter Output Admittance IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Noise Figure IC = 100 µAdc, VCE = 10 Vdc, f = 1.0 kHz, RG =1.0 kΩ hfe 60 2.0 1.5 300 10 9.0 50 8.0 8.0 kΩ µhmo pF dB hfe hje hoe Cobo NF SWITCHING CHARACTERISTICS Turn-On Time (See Figure 4 of MIL-PRF-19500/421) Turn-Off Time (See Figure 5 of MIL-PRF-19500/421) Pulse Response (See Figure 6 of MIL-PRF-19500/421) Collector-Emitter Non-Latching Voltage (See Figure 7 of MIL-PRF-19500/421) t t t on 45 300 18 40 ηs ηs ηs Vdc off on + toff VCEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42103 Page 2 of 2