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2N3866AUB

2N3866AUB

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N3866AUB - NPN SILICON HIGH-FREQUENCY TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N3866AUB 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866A 2N3866UB 2N3866AUB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C 2N3866, A 2N3866UB / AUB Symbol VCEO VCBO VEBO IC PT Tj, Tstg RθJC Value 30 60 305 400 1.0 0.5 -65 to +200 60.0 Unit Vdc Vdc Vdc mAdc W °C °C/W TO-39 (TO-205AD) 2N3866, 2N3866A Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case NOTE: 1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above TA > +25°C 2. TA = room ambient as defined in the general requirements of MIL-PRF-19500 3. PT = 2.9W at TC = +25°C, derate at 16.6mW/°C above TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Symbol Min. Max. Unit Collector-Emitter Breakdown Voltage IC = 5.0mAdc Collector-Base Breakdown Voltage IC = 100µAdc Emitter-Base Breakdown Voltage IE = 100µAdc Collector-Emitter Cutoff Current VCE = 28Vdc Collector-Emitter Cutoff Current VCE = 55Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICES1 30 60 3.5 20 100 Vdc Vdc Vdc μAdc μAdc UB Package 2N3866UB, 2N3866AUB T4-LDS-0175 Rev. 1 (101096) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 100μAdc, VCE = 5.0Vdc IC = 360mAdc, VCE = 5.0Vdc (3) Symbol Min. Max. Unit 2N3866, 2N3866UB 2N3866A, 2N3866AUB 2N3866, 2N3866UB 2N3866A, 2N3866AUB hFE 15 25 5 8 200 200 Collector-Emitter Saturation Voltage IC = 100mAdc, IB = 10mAdc Collector-Emitter Cutoff Current – High Temperature Operation VCE = 55Vdc TA = +150°C Forward Current Transfer Ratio – Low Temperature Operation VCE = 5.0Vdc 2N3866, 2N3866UB IC = 50mAdc, TA = -55°C 2N3866A, 2N3866AUB DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small–Signal Short-Circuit Forward Current Transfer Ratio IC = 50mAdc, VCE = 15Vdc, f = 100MHz 2N3866, 2N3866UB 2N3866A, 2N3866AUB Output Capacitance VCB = 28Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz POWER OUTPUT CHARACTERISTICS Parameters / Test Conditions Power Output VCC = 28Vdc; Pin = 0.15W; f = 400MHz * VCC = 28Vdc; Pin = 0.075W; f = 400MHz * Collector Efficiency VCC = 28Vdc; Pin = 0.15W; f = 400MHz VCC = 28Vdc; Pin = 0.075W; f = 400MHz * See Figure 4 on /398 Clamp Inductive Collector-Emitter Breakdown Voltage VBE = 1.5Vdc IC = 40mAdc (4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. VCE(sat) ICES2 1.0 2.0 Vdc mAdc HFE3 7 12 Symbol |hfe| Min. Max. Unit 2.5 4.0 8.0 7.5 3.5 pF Cobo Symbol P1out P2out Min. 1.0 0.5 Max. 2.0 Unit W n1 n2 45 40 % V(BR)CEX 55 Vdc T4-LDS-0175 Rev. 1 (101096) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP Notes 6 TO-39 7 8, 9 8, 9 8, 9 8, 9 8, 9 7 5 3, 4 3 10 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (TO-39) T4-LDS-0175 Rev. 1 (101096) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Letter BH BL BW CL CW LL1 LL2 LS1 LS2 LW r r1 r2 Min .046 .115 .085 Inches .022 .017 .036 .071 .016 Dimensions Millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.96 .035 0.43 0.89 .040 0.91 1.02 .079 1.81 2.01 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. FIGURE 3. Physical dimensions, surface mount (UB). T4-LDS-0175 Rev. 1 (101096) Page 4 of 4
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