2N3999

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 DEVICES LEVELS 2N3996 2N3997 2N3998 2N3999 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25°C @ TC = +100°C (3) (2) Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Value 80 100 8.0 0.5 10 (1) Unit Vdc Vdc Vdc Adc Adc W °C °C/W TO-111 2N3996, 2N3997 2.0 30 -65 to +200 3.33 Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case RθJC Note: (1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50% (2) Derate linearly 11.4 mW/°C for TA > +25°C (3) Derate linearly 300 mW/°C for TC > +100°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Symbol Min. Max. Unit Collector-Emitter Breakdown Voltage IC = 50mAdc Collector-Emitter Breakdown Voltage IC = 10µAdc Collector-Emitter Cutoff Current VCE = 60Vdc Collector-Emitter Cutoff Current VCE = 80Vdc, VBE = 0V Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 8.0Vdc V(BR)CEO V(BR)CBO ICEO ICES IEBO 80 100 10 200 200 10 Vdc Vdc µAdc ηAdc ηAdc µAdc TO-59 2N3998, 2N3999 T4-LDS-0165 Rev. 1 (100688) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS (2) Symbol Min. Max. Unit Forward-Current Transfer Ratio IC = 50mAdc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 50mAdc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 2.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 1.0Adc, IB = 0.1Adc IC = 5.0Adc, IB = 0.5Adc Base-Emitter Saturation Voltage IC = 1.0Adc, IB = 0.1Adc IC = 5.0Adc, IB = 0.5Adc DYNAMIC CHARACTERISTICS 2N3996, 2N3998 hFE 2N3997, 2N3999 30 40 15 60 80 20 120 240 VCE(sat) 0.25 2.0 0.6 1.2 1.6 Vdc VBE(sat) Vdc Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0Adc, VCE = 5.0Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz SAFE OPERATING AREA DC Tests TC = +100°C, 1 Cycle, t = 1.0s Test 1 VCE = 80Vdc, IC = 0.08Adc Test 2 VCE = 20Vdc, IC = 1.5Adc (4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. Symbol |hfe| Min. 3.0 Max. 12 150 Unit Cobo pF T4-LDS-0165 Rev. 1 (100688) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr CH A1 CD CD1 HF PS PS 1 HT OAH UD SL SU φT φT1 SD Z Z1 Dimensions Millimeters Inches Min Max Min Max .345 .400 8.76 10.16 .250 6.35 .370 .437 9.40 11.10 .318 .380 8.08 9.65 .424 .437 10.77 11.10 .180 .215 4.57 5.46 .080 .110 2.03 2.79 .090 .140 2.29 3.56 .575 .675 14.61 17.15 .155 .189 3.94 4.80 .400 .455 10.16 11.56 .078 1.98 .040 .065 1.02 1.65 .040 .065 1.02 1.65 .190-32 UNF-2A .002 0.05 .006 0.15 Notes 3 3 5 5 2, 6 1 7 4 8 NOTES: 1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case. 2. Chamfer or undercut on one or both ends of hexagonal portion is optional. 3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1. 4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected to the case. The other three terminals shall be electrically isolated from the case. 5. Angular orientation of terminals with respect to hexagon is optional. 6. HT dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I. 9. Dimensions are in inches. * 10. Millimeters are giving for general information only. * 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. T4-LDS-0165 Rev. 1 (100688) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Ltr CH A1 CD1 CD HF PS PS 1 PS 2 PS 3 HT OAH UD SL SU φT φT1 SD Dimensions Millimeters Inches Min Max Min Max .345 .400 8.76 10.16 .250 6.35 .318 .380 8.08 9.65 .370 .437 9.40 11.10 .424 .437 10.77 11.10 .125 .165 3.18 4.19 .110 .145 2.79 3.68 .090 .140 2.29 3.56 .185 .215 4.70 5.46 .090 .140 2.29 3.56 .575 .675 14.61 17.15 .155 .189 3.94 4.80 .400 .455 10.16 11.56 .078 1.98 .040 .065 1.02 1.65 .040 .065 1.02 1.65 .190-32 UNF-2A Notes 4, 7, 8 4, 7 4, 7, 8 4, 7, 8 5 9 3 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only 2. Collector shall be electrically connected to the case. This terminal may be flattened and pierced only when the 90 degree option is used. 3. SD is the pitch diameter of coated threads. Reference: Screw thread standards for Federal Service Handbook H28, part I. 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud. 7. Terminal spacing measured at the base seat only. 8. Dimensions PS, PS1, PS2, and PS3 are measured from the centerline of terminals. 9. Maximum unthreaded dimension. 10. This dimension applies to the location of the center line of the terminals. 11. A 90 degree angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic outline except PS, PS1, and the 120 lead angle apply to this option. 12. Terminal 1, emitter; terminal 2, base; terminal 3, collector. 13. A slight chamfer or undercut on one or both ends of the hexagonal is optional. * 14. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 2. Physical dimensions for transistor types 2N3998 and 2N3999 T4-LDS-0165 Rev. 1 (100688) Page 4 of 4