TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561 Devices 2N6193 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC
2N6193
100 100 6.0 5.0 1.0 1.0 10 -65 to +200 Max. 17.5
Units
Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71mW/0C for TA > +250C 2) Derate linearly 57.1mW/0C for TC > +250C
0
TO-39* (TO-205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol VCEO(sus) ICEO IEBO ICEX ICBO Min. 100 100 100 10 10 Max. Unit Vdc µAdc µAdc µAdc µAdc
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 90 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 100 Vdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N6193 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
DC Current Gain IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc Base-Emitter Saturation Voltage IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc hFE 60 60 40 240
VCE(sat)
0.7 1.2 1.2 1.8
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Output Capacitance VBE = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
Cobo Cibo
t
3.0
15 300 1250 100 100 2.0 200 pF pF ηs ηs µs ηs
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time VCC = -40 Vdc, VBE(off) = 3.0 Vdc IC = 2.0 Adc, IB1= 0.2 Adc VCC = -40 Vdc IC = 2.0 Adc, IB1 = -IB2 = 0.2 Adc d r t s t f
t
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t ≥ 0.5 s Test 1 VCE = 2.0 Vdc, IC = 5.0 Adc Test 2 VCE = 90 Vdc, IC = 55 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2
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