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APT15D120SG

APT15D120SG

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    APT15D120SG - ULTRAFAST SOFT RECOVERY RECTIFIER DIODE - Microsemi Corporation

  • 数据手册
  • 价格&库存
APT15D120SG 数据手册
1 2 (B) TO -2 4 1 - Cathode 2 - Anode Back of Case - Cathode 7 D3PAK 1 2 (S) APT15D120B(G) 1200V 15A APT15D120S(G) 1200V 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 1 2 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-247 Package or Surface Mount D3PAK Package PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density • Low Forward Voltage • High Blocking Voltage • Low Leakage Current MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT15D120B_S(G) UNIT 1200 Volts Maximum Average Forward Current (TC = 98°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. 15 24 110 -55 to 150 300 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125°C MIN TYP MAX UNIT 2.0 2.3 1.8 2.5 Volts 250 500 17 pF Microsemi Website - http://www.microsemi.com 053-0023 Rev B 10-2009 μA DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MIN - APT15D120B_S(G) TYP MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -1000A/μs VR = 800V, TC = 125°C IF = 15A, diF/dt = -200A/μs VR = 800V, TC = 125°C IF = 15A, diF/dt = -200A/μs VR = 800V, TC = 25°C 32 260 480 4 370 1300 9 140 2000 28 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT °C/W oz g 1.18 40 0.22 5.9 10 1.1 Torque Maximum Mounting Torque lb•in N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.9 1.0 0.80 0.60 0.40 0.20 0 0.7 0.5 Note: PDM 0.3 t1 t2 0.1 0.05 10 -5 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10-4 053-0023 Rev B 10-2009 TYPICAL PERFORMANCE CURVES 50 trr, REVERSE RECOVERY TIME (ns) 500 30A APT15D120B_S(G) T =125°C J V =800V R IF, FORWARD CURRENT (A) 40 400 15A 7.5A 200 30 300 20 TJ = 150°C TJ = 25°C TJ = 125°C TJ = -55°C 10 100 0 0 0.5 1 1.5 2 2.5 3 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) T =125°C J V =800V R 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 30 25 20 15 10 7.5A 5 0 T =125°C J V =800V R 0 0 200 3500 Qrr, REVERSE RECOVERY CHARGE (nC) 3000 2500 2000 1500 1000 500 0 15A 30A 30A 15A 7.5A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 Qrr 0.4 0.2 0.0 IRRM trr trr Qrr 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 30 25 20 IF(AV) (A) 15 10 5 0 Duty cycle = 0.5 T =150°C J 0 200 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 160 140 CJ, JUNCTION CAPACITANCE (pF) 120 100 80 0 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 25 50 75 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 .7 1 053-0023 Rev B 10-2009 60 APT15D120B_S(G) Vr +18V 0V D.U.T. 30μH trr/Qrr Waveform diF /dt Adjust APT10035LLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 0.25 IRRM trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 5 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline Cathode (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D3PAK Package Outline 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05 (.632) 1.00 (.039) 1.15 (.045) 13.30 (.524) 13.60 (.535) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 18.70 (.736) 19.10 (.752) 12.40 (.488) 12.70 (.500) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 053-0023 Rev B 10-2009 19.81 (.780) 20.32 (.800) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) 2.40 (.094) 2.70 (.106) (Base of Lead) Anode 2.21 (.087) 2.59 (.102) Heat Sink (Cathode) and Leads are Plated Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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