APT20N60SC3G

APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT17N80BC3_SC3 UNIT 600 Volts Drain-Source Voltage 20.7 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 VGSM Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 208 Watts Linear Derating Factor 1.67 W/°C PD TJ,TSTG TL dv/ dt 62 Operating and Storage Junction Temperature Range -55 to 150 °C Lead Temperature: 0.063" from Case for 10 Sec. 260 Drain-Source Voltage slope (VDS = 480V, ID = 20.7A, TJ = 125°C) 50 V/ns 20 Amps IAR Repetitive Avalanche Current 7 EAR Repetitive Avalanche Energy 7 EAS Volts Single Pulse Avalanche Energy 1 4 mJ 690 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 13.1A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) TYP 0.16 0.19 0.05 25 250 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 2.1 UNIT Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate Threshold Voltage (VDS = VGS, ID = 1mA) MAX 3 Ohms µA ±100 nA 3.9 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 4-2004 Characteristic / Test Conditions 050-7145 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT20N60B_SC3 Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 860 Crss Reverse Transfer Capacitance f = 1 MHz 50 VGS = 10V 90 VDD = 300V 13 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 20.7A @ 25°C tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 5 INDUCTIVE SWITCHING @ 25°C 6 180 VDD = 400V, VGS = 15V 6 ns 65 RG = 3.6Ω Fall Time nC 5 VDD = 380V ID = 20.7A @ 25°C Turn-off Delay Time 114 10 VGS = 15V Rise Time td(off) pF 45 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 2440 VGS = 0V 3 MAX ID = 20.7A, RG = 5Ω 120 INDUCTIVE SWITCHING @ 125°C 320 VDD = 400V VGS = 15V ID = 20.7A, RG = 5Ω µJ 135 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP 20.7 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr MAX 62 (Body Diode) UNIT Amps 1 1.2 Volts Reverse Recovery Time (IS = -20.7A, dl S/dt = 100A/µs, VR = 480V) 500 800 ns Q rr Reverse Recovery Charge (IS = -20.7A, dl S/dt = 100A/µs, VR = 480V) 11 dv/ Peak Diode Recovery dt dv/ (VGS = 0V, IS = - 20.7A) dt µC 6 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.60 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 13.80mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID20.7A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.9 0.50 0.7 0.40 0.5 0.30 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7145 Rev D 4-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70 0.60 0.3 0.20 t1 t2 0.10 0 0.1 SINGLE PULSE 0.05 10-5 10-4 °C/W Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT20N60B_SC3 60 RC MODEL Junction temp. ( ”C) 0.259 0.00500 0.341 0.135 Power (watts) Case temperature ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V 6.5V 50 6V 40 5.5V 30 20 5V 10 4.5V 4V 0 40 30 TJ = -55°C TJ = +25°C 20 10 0 TJ = +125°C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 20 15 10 5 0 25 I D V 2.5 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 GS 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 1.2 = 11.9A = 10V 2.0 1.5 1.0 0.5 0 -50 1.20 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE NORMALIZED TO = 10V @ 11.9A GS 1.30 1.15 25 3.0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 50 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @