APT2X31DQ120J

2 3 2 3 2 1 4 3 1 4 1 4 Anti-Parallel APT2x30DQ120J Parallel APT2x31DQ120J ISOTOP ® SO 2 T- 27 "UL Recognized" file # E145592 APT2x31DQ120J APT2x30DQ120J 1200V 30A 1200V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular SOT-227 Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density • Uninterruptible Power Supply (UPS) • Induction Heating • High Speed Rectifiers MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT2x31_30DQ120J UNIT Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 89°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range 1200 Volts 30 39 210 20 -55 to 175 mJ °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com VR = 1200V VR = 1200V, TJ = 125°C MIN TYP MAX UNIT 2.6 3.25 1.8 3.1 Volts 7-2006 053-4221 Rev D 100 500 36 µA pF DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 30A, diF/dt = -200A/µs VR = 800V, TC = 25°C Test Conditions IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C MIN - APT2x31_30DQ120J TYP MAX UNIT ns nC 25 300 360 4 380 1700 8 160 2550 28 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT °C/W Volts 1.1 2500 1.03 29.2 10 1.1 oz g lb•in N•m Torque Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 1.00 0.80 0.60 0.40 0.20 0 D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4 Note: PDM t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) 7-2006 0.219 Dissipated Power (Watts) 0.00306 0.0463 0.267 0.468 TC (°C) 0.341 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 053-4221 Rev D FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125°C TJ = -55°C TJ = 175°C TJ = 25°C 450 400 350 300 250 200 150 100 50 30A 60A APT2x31_30DQ120J T = 125°C J V = 800V R 15A 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage T = 125°C J V = 800V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10 T = 125°C J V = 800V R 0 4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 60A 60A 30A 30A 15A 15A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.0 trr 0.8 0.6 0.4 0.2 0.0 trr Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5 Duty cycle = 0.5 T = 175°C J IRRM Qrr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 CJ, JUNCTION CAPACITANCE (pF) 0 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50 150 100 7-2006 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1 053-4221 Rev D APT2x31_30DQ120J Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT10035LLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) APT2x30DQ120J 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Anti-parallel APT2x31DQ120J Parallel Anode 2 Cathode 1 Cathode 1 Anode 1 053-4221 Rev D Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.