APT2X61S20J

2 2 3 3 4 1 1 4 Parallel S ISOTOP fi OT 22 7 APT2X61S20J APT2X61S20J 200V 75A "UL Recognized" file # E145592 DUAL DIE ISOTOP® PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS • Parallel Diode • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers PRODUCT FEATURES • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular SOT-227 Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Systems • Increased System Power Density MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG EAVL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage All Ratings: TC = 25°C unless otherwise specified. APT2X61S20J UNIT 200 Volts Maximum Average Forward Current (TC =106°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Operating and StorageTemperature Range Avalanche Energy (2A, 30mH) 75 137 600 -55 to 150 60 °C mJ Amps STATIC ELECTRICAL CHARACTERISTICS Symbol IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com MIN TYP MAX UNIT .83 .98 .72 .90 Volts VR = 200V, TJ = 125°C 25 300 mA pF 053-6044 Rev C 7-2006 VR = 200V 1 DYNAMIC CHARACTERISTICS Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -700A/µs VR = 133V, TC = 125°C IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 125°C Test Conditions IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 25°C MIN TYP APT2X61S20J MAX UNIT ns nC 55 160 5 100 490 10 80 1100 27 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC VIsolation WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT °C/W Volts .54 2500 1.03 29.2 10 1.1 oz g lb•in N•m Torque Maximum Terminal & Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.60 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.50 0.40 0.30 0.20 0.10 0 D = 0.9 0.7 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) 0.143 Dissipated Power (Watts) 0.00623 0.0943 0.543 0.230 TC ( C) 0.167 7-2006 053-6044 Rev C ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 200 180 IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) 120 100 80 60 40 20 0 APT2X61S20J TJ = 125°C VR = 133V TJ = -55°C TJ = 25°C 120A 60A 160 140 120 100 80 60 40 20 0 0 TJ = 125°C TJ = 150°C 30A 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 30 25 20 60A 15 10 5 0 30A TJ = 125°C VR = 133V 1800 Qrr, REVERSE RECOVERY CHARGE (nC) 1600 1400 1200 1000 800 600 400 200 0 0 120A 120A 60A 30A 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 I RRM t rr Qrr Qrr 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 140 120 IF(AV) (A) Duty cycle = 0.5 TJ = 150°C Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 100 80 60 40 20 t rr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 3500 3000 2500 2000 1500 1000 50 0 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 50 0 25 50 CJ, JUNCTION CAPACITANCE (pF) PEAK AVALANCHE CURRENT (A) 10 7-2006 5 1 1 1 10 100 1000 2200 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6044 Rev C APT2X61S20J Vr +18V 0V D.U.T. 30µH trr/Qrr Waveform diF /dt Adjust APT20M36BLL PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 7-2006 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Parallel Cathode 1 APT2X61S20J Anode 1 053-6044 Rev C Dimensions in Millimeters and (Inches) Cathode 2 Anode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.