APTGT200A60T3AG

APTGT200A60T3AG VCES = 600V IC = 200A @ Tc = 100°C Phase leg Trench + Field Stop IGBT3 Power Module 29 30 31 32 13 Application     4 3 26 27 28 22 23 25 Features  Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated  Very low stray inductance  Kelvin emitter for easy drive  Internal thermistor for temperature monitoring  AlN substrate for improved thermal performance R1 8 7 16 18 19 20 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 14 Benefits  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  RoHS Compliant Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together All ratings @ Tj = 25°C unless otherwise specified Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 100°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 290 200 400 ±20 750 Unit V A V W 400A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–6 APTGT200A60T3AG – Rev 3 November, 2017 Absolute maximum ratings (Per IGBT) APTGT200A60T3AG Electrical Characteristics (Per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics (Per IGBT) Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE= ±15V ; VCE=300V IC=200A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A RG = 2 Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 200A Tj = 25°C RG = 2 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Typ 12.3 0.8 0.4 nF 2.2 µC 115 45 225 ns 55 130 50 ns 300 70 1 1.8 5.7 7 mJ mJ 1000 Junction to Case Thermal Resistance A 0.20 °C/W Max 600 250 Unit V µA A Symbol VRRM IRM IF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions RthJC Typ VR=600V IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =2800A/µs Er Min Reverse Recovery Energy Junction to Case Thermal Resistance Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 200 1.6 1.5 125 220 9 Tj = 150°C Tj = 25°C Tj = 150°C 20 2.2 4.8 2 ns µC mJ 0.31 www.microsemi.com V °C/W 2–6 APTGT200A60T3AG – Rev 3 November, 2017 Reverse diode ratings and characteristics (Per diode) APTGT200A60T3AG Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 175 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85    T T  25   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGT200A60T3AG – Rev 3 November, 2017 Package outline (dimensions in mm) APTGT200A60T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 400 400 TJ=25°C 350 200 150 100 100 50 50 TJ=25°C 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 14 350 1 300 10 E (mJ) 250 200 TJ=125°C 2.5 3 3.5 Eoff 8 Er 6 4 100 TJ=150°C 2 50 TJ=25°C 5 6 7 8 9 Eon 0 0 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance 16 VCE = 300V VGE =15V IC = 200A TJ = 150°C 12 Reverse Bias Safe Operating Area 500 400 Eoff Eon 8 IF (A) E (mJ) 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 2Ω TJ = 150°C 12 TJ=25°C 150 0.5 Energy losses vs Collector Current Transfert Characteristics 400 IC (A) VGE=15V 200 150 0 VGE=13V 250 IC (A) IC (A) TJ=150°C 250 0 VGE=19V 300 TJ=125°C 300 TJ = 150°C 350 300 200 4 Eon Er VGE=15V TJ=150°C RG=2Ω 100 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.2 0.9 0.15 0.7 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–6 APTGT200A60T3AG – Rev 3 November, 2017 Thermal Impedance (°C/W) 0.25 APTGT200A60T3AG Forward Characteristic of diode 400 100 VCE=300V D=50% RG=2Ω TJ=150°C ZVS ZCS 80 350 300 250 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 200 TJ=125°C 150 40 Hard switching 20 TJ=150°C 100 50 TJ=25°C 0 0 0 50 100 150 IC (A) 200 0 250 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 Diode 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5–6 APTGT200A60T3AG – Rev 3 November, 2017 Thermal Impedance (°C/W) 0.35 APTGT200A60T3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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