LX5503ELQ

LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 4.9-5.85GHz Operation Single-Polarity 3.3V Supply Total Current ~ 150mA for Pout=18dBm at 5.25GHz P1dB ~ +26dBm across 4.9~5.85GHz Power Gain ~ 21dB at 5.25GHz & Pout=18dBm Power Gain ~ 16dB at 5.85GHz & Pout=18dBm EVM ~ 3% for 64QAM/ 54Mbps & Pout=18dBm Excellent Temperature Performance Simple Input/Output Match Minimal External Components Optional low-cost LDO for Optimal System Performance 2 Small Footprint: 3x3mm Low Profile: 0.9mm APPLICATIONS/BENEFITS The LX5503E is a power amplifier optimized for high-efficiency lowpower applications in the FCC Unlicensed National Information Infrastructure (U-NII) band, Europe HyperLAN2, and Japan WLAN in the 4.9-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single supply of 3.3V with +26dBm of P1dB, and power gain of 21dB between 4.9-5.35GHz and 16dB up to 5.85GHz. For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA total DC current. The LX5503E is available in a 16pin 3x3mm2 micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the micro-lead package make the LX5503E an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications. WWW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FCC-UNII Wireless IEEE 802.11a HiperLAN2 PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ Plastic MLPQ 16-Pin LX5503ELQ LX5503E LX5503E RoHS Compliant / Pb-free Transition DC: 0418 Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5503ELQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi . C OM DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................500mA Total Power Dissipation....................................................................................3W RF Input Power........................................................................................... 10dBm Operation Ambient Temperature .......................................................-40 to +85°C Maximum Junction Temperature (TJMAX) .................................................... 150°C Storage Temperature.......................................................................... -65 to 150°C Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5) 13 14 15 16 12 11 10 9 8 7 6 5 1 2 3 4 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. LQ PACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Name Pin # Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. RF IN 2, 3 VB1 6 Bias current control voltage for the first stage. VB2 7 Bias current control voltage for the second stage. The VB2 pin can be connected with VB1 into a single reference voltage (Vref) through an external resistor bridge. Supply voltage for the Bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (Vc). Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side. This pin can be combined with VC1 and VCC, resulting in a single supply voltage (Vc). The center metal base of the MLPQ package provides both DC/RF ground as well as heat sink for the power amplifier. VCC 9 RF OUT 10, 11 VC1 15 PACKAGE DATA PACKAGE DATA VC2 14 GND Center Metal Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Icq = 100mA, TA = 25°C PARAMETER Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm EVM at Pout=18dBm Total Current at Pout=18dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Ramp-On Time Pout = 18dBm Pout = 18dBm 10~90% tON Over 200MHz -40 to +85 C o WWW . Microsemi . C OM CONDITION SYMBOL f Pout Gp MIN. 4.9 25 TYP. 26 21 3 150 100 1.5 19 +/-0.5 +/-1 -15 -7 -35 -40 -45 100 MAX. 5.35 MIN. 5.7 25 TYP. 26 16 3 160 100 1.5 15 +/-0.5 +/-1 MAX. 5.85 UNIT GHz dBm dB % mA mA mA dB dB dB 64QAM/54Mbps Ic_total Icq For Icq=100mA Iref S21 ΔS21 ΔS21 S11 S22 S12 -10 -12 -8 -35 -35 -45 100 -10 dB dB dB dBc dBc ns ELECTRICALS ELECTRICALS Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES Typical EVM & Total Current vs. Output Power (Vc=3.3V, Icq=100mA, 64QAM/54Mbps) 10 9 8 7 EVM Ictotal 200 190 180 WWW . Microsemi . C OM 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 16 17 18 19 20 21 160 150 140 130 120 110 100 Ictotal (mA) 170 EVM (%) Freq=4.97GHz (EVM Test Set Limited to >4.97GHz) Pout (dBm) 10 9 8 7 EVM Ictotal 200 190 180 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 16 17 18 19 20 21 160 150 140 130 120 110 100 Ictotal (mA) 170 EVM (%) Freq=5.25GHz Pout (dBm) 12 11 10 9 8 EVM Ictotal 220 210 200 190 180 170 160 150 140 130 120 110 100 8 9 10 11 12 13 14 15 16 17 18 19 20 21 EVM (%) 7 6 5 4 3 2 1 0 Ictotal (mA) Freq=5.85GHz GRAPHS GRAPHS Pout (dBm) Notes: All EVM data are for OFDM signal of 64QAM/54Mbps and are actual measured data without any de-embedding. Source EVM from is around 1.4~1.8% for the input power levels for test. Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES Typical Power Sweep Data at Room Temperature (Vc=3.3V, Icq=100mA) WWW . Microsemi . C OM Freq=4.97GHz Freq=5.25GHz Freq=5.85GHz G GRAPHS Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES WWW . Microsemi . C OM Typical EVM vs. Frequency (Vc=3.3V, Icq=100mA, Pout=18dBm, 64QAM/54Mbps) 4 EVM 3.75 Typical P1dB vs. Supply Voltage (Vc=3.3V, Icq=100mA, Freq=5.25GHz) 28 27.5 27 P1dB (dBm) 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 3.5 26.5 26 25.5 25 EVM (%) 3.25 3 2.75 24.5 2.5 4.85 24 3 3.2 3.4 3.6 3.8 4 Frequency (GHz) Vc (V) Typical P1dB vs. Frequency (Vc=3.3V, Icq=100mA) 27 Typical Small-Signal Gain vs. Supply Voltage (Vc=3.3V, Icq=100mA, Freq=5.25GHz) 21 26.5 P1dB (dBm) 26 25.5 S21@5.25GHz (dB) 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 20.75 20.5 25 20.25 24.5 24 4 .85 20 3 3.2 3.4 3.6 3.8 4 Frequency (GHz) Vc (V) Typical S-Parameter Data at Room Temperature (Vc=3.3V, Icq=100mA) 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 4.0 4 .2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 Typical Small-Signal Gain Variation Over Temperature (Vc=3.3V, Icq=100mA at Room Temperature) 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 4.0 4 .2 4.4 4.6 4.8 dB(S (1,2)) dB(S (2,2)) dB(S (1,1)) dB(S (2,1)) S21 (dB) GRAPHS GRAPHS -40oC -20oC 0oC 25oC 85oC 5.0 5.2 5.4 5.6 5.8 6.0 freq, GHz Copyright © 2000 Rev. 1.2d, 2005-08-18 fre q, GHz Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES WWW . Microsemi . C OM Typical EVM Variation Over Temperature (Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz) 10 9 8 7 -40oC -25oC 0oC 25oC 50oC 85oC EVM (%) 6 5 4 3 2 1 0 13 14 15 16 17 18 19 20 21 Pout (dBm) Typical ACPR Variation Over Temperature (Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz) -40 -40oC -25oC 0oC 25oC 50oC 85oC ACPR@30MHz (dBc) -45 -50 -55 G GRAPHS -60 13 14 15 16 17 18 19 20 21 Pout (dBm) Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi . C OM LQ 16-Pin MLPQ 3x3 D b E2 L E D2 or A1 A3 A e K or Pin 1 Indicator Dim A A1 A3 b D E e D2 E2 K L L1 MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 0.15 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 0.006 Or D b E2 L Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container. 2. E D2 L1 e A1 A K MECHANICALS MECHANICALS Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi . C OM NOTES NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of application date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.2d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9